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In this work, an urchin-like Ni@Ni2P@NiCoP (Ni@NP@NCP) composite was prepared on nickel foam by a simple hydrothermal treatment process. Using the prepared NiO nanosheets as templates, the NiCo precursor was prepared in the presence of three solvothermal systems of water/dimethylformamide (DMF)/dimethyl sulfoxide (DMSO) by the hydrothermal process. After mixing and calcining with sodium hypophosphite under a nitrogen atmosphere at a high temperature for phosphating, an urchin-like Ni@NP@NCP(F/SO/H) nanostructured catalyst was obtained with superior hydrogen evolution and oxygen evolution performance. To further explore their efficiency in seawater splitting. Ni@NP@NCP(F/SO/H) composites were used as the cathode and anode of an electrolytic cell, which delivered 1.822 V potential at 300 mA cm–2in simulated seawater (1 M KOH and 0.5 M NaCl). This may provide an effective way of developing clean energy.

The construction of p-NiO/n-Ga2O3heterojunction becomes a popular alternative to overcome the technological bottleneck of p-type Ga2O3for developing bipolar power devices for practical applications, whereas the identification of performance-limiting traps and the bipolar transport dynamics are still not exploited yet. To this end, the fundamental correlation of carrier transport, trapping and recombination kinetics in NiO/β-Ga2O3p+-n heterojunction power diodes has been investigated. The quantitative modeling of the temperature-dependent current-voltage characteristics indicates that the modified Shockley-Read-Hall recombination mediated by majority carrier trap states with an activation energy of 0.64 eV dominates the trap-assisted tunneling process in the forward subthreshold conduction regime, while the minority carrier diffusion with near-unity ideality factors is overwhelming at the bias over the turn-on voltage. The leakage mechanism at high reverse biases is governed by the Poole-Frenkel emissions through the β-Ga2O3bulk traps with a barrier height of 0.75 eV, which is supported by the identification of majority bulk traps with the energy level of EC− 0.75 eV through the isothermal capacitance transient spectroscopic analysis. These findings bridge the knowledge gap between bipolar charge transport and deep-level trap behaviors in Ga2O3, which is crucial to understand the reliability of Ga2O3bipolar power rectifiers.

Background: Salpingitis obstructive infertility (SOI) refers to infertility caused by abnormal conditions such as tubal adhesion and blockage caused by acute and chronic salpingitis. SOI has a serious impact on women's physical and mental health and family harmony, and it is a clinical problem that needs to be solved urgently.Objective: The purpose of the present study was to explore the potential pharmacological mechanisms of the Yinjia tablets (Yin Jia Pian, YJP) on tubal inflammation.Methods: Networks of YJP-associated targets and tubal inflammation-related genes were constructed through the STRING database. Potential targets and pathway enrichment analysis related to the therapeutic efficacy of YJP were identified using Cytoscape and Database for Annotation, Visualization, and Integrated Discovery (metascape). E. coliwas used to establish a rat model of tubal inflammation and to validate the predictions of network pharmacology and the therapeutic efficacy of YJP. H&E staining was used to observe the pathological changes in fallopian tubes. TEM observation of the ultrastructure of the fallopian tubes. ELISA was used to detect the changes of IL-6 and TNF-α in fallopian tubes. Immunohistochemistry was used to detect the expression of ESR1. The changes of Bcl-2, ERK1/2, p-ERK1/2, MEK, p-MEK, EGFR, and p-EGFR were detected by western blot.Results: Through database analysis, it was found that YJP shared 105 identical targets with the disease. Network pharmacology analysis showed that IL-6, TNF, and EGFR belong to the top 5 core proteins associated with salpingitis, and EGFR/MEK/ERK may be the main pathway involved. The E. coli-induced disease rat model of fallopian tube tissue showed damage, mitochondrial disruption, and increased levels of the inflammatory factors IL-6 and TNF-α. Tubal inflammatory infertility rats have increased expression of Bcl-2, p-ERK1/2, p-MEK, and p-EGFR, and decreased expression of ESR1. In vivo, experiments showed that YJP improved damage of tissue, inhibited shedding of tubal cilia, and suppressed the inflammatory response of the body. Furthermore, YJP inhibited EGFR/MEK/ERK signaling, inhibited the apoptotic protein Bcl-2, and upregulated ESR1.Conclusion: This study revealed that YJP Reducing tubal inflammation and promoting tissue repair may be associated with inhibition of the EGFR/MEK/ERK signaling pathway.

Herein, multiwalled carbon nanotube (MWCNT)/silicon nitride (Si3N4)/polyaniline (PANI) ternary composites are prepared. The preparation method involves attaching carboxyl groups to acid‐modified MWCNT surfaces and amino groups to Si3N4surfaces modified using a silane‐coupling agent. Then they are combined to binary composites using the solvent‐thermal method. Finally, the ternary composites are prepared by coating PANI on the surface of MWCNT/Si3N4composites in situ polymerization. The morphology and structure of these composites are characterized through X‐ray diffraction, Fourier‐transform infrared spectroscopy, scanning electron microscopy, transmission electron microscopy, and X‐ray photoelectron spectroscopy. Results show that the reflection loss at 8.8 GHz reaches −42.57 dB when the feeding ratio of MWCNT:Si3N4:PANI is 3:20:40 and the corresponding effective absorption bandwidth reaches 4.06 GHz when the thickness is 3.5 mm. A conductive network with effective electron leaps is formed among MWCNT, Si3N4, and PANI, which increases the conductive loss of the composites. An abundant number of interfaces have formed in the composite materials and promoted dielectric loss. Multiple loss mechanisms and good impedance matching performance endow MWCNT/Si3N4/PANI with excellent microwave absorption performance, and the incorporation of Si3N4enables the composites to exhibit satisfactory high‐temperature resistance. Thus, these performances render the composites promising materials to address increasing electromagnetic pollution, particularly at high temperatures. Silicon nitride (Si3N4) has attracted attention for its potential use in the direction of wave absorption due to its excellent mechanical strength and high‐temperature stability. Herein, the wave absorption properties of multiwalled carbon nanotubes/Si3N4/polyaniline composites are mainly investigated. The results show that the material can better mitigate electromagnetic wave pollution and good high‐temperature resistance. Thus, these performances render the composites promising materials to address increasing electromagnetic pollution, particularly at high temperatures.

Tubal inflammation, endometritis, and uterine adhesions due to post-pelvic inflammatory disease (SPID) are important causes of infertility. Chronic endometritis (CE) belongs to SPID, which seriously affects women's reproductive health, quality of life, and family harmony, and is a hot and difficult problem in clinical research. The efficacy of Pen Yan Kang Fu Decoction (PYKFD) has been verified in long-term clinical practice for chronic endometritis infertility caused by the SPID. Numerous studies have confirmed that the LIF/JAK2/STAT3 signaling pathway is important in embryo implantation and development, and endometritis infertility is close to LIF/JAK2/STAT3. In vivo results showed that PYKFD increased endometrial receptivity, repaired uterine tissue damage, and regulates the expression of endometrial receptivity-related factors ER (estrogen receptor), PR (progesterone receptor), CD31, and integrin αvβ3, and induced the transduction of LIF/JAK2/STAT3 signaling pathway. PYKFD can also regulate the expression of IL-6. The results of in vitro experiments showed that PYKFD regulates the behavior of rat endometrial epithelial cells (REECs) involving LIF. In conclusion, PYKFD can improve endometrial receptivity and promote endometrial repair by LIF/JAK2/STAT3 signaling pathway.

We report optically and electrically pumped ${\sim}{280}\,\,{\rm nm}$∼280nm deep ultraviolet (DUV) light emitting diodes (LEDs) with ultra-thin GaN/AlN quantum disks (QDs) inserted into AlGaN nanorods by selective epitaxial regrowth using molecular beam epitaxy. The GaN/AlN QD LED has shown strong DUV emission distribution on the ordered nanorods and high internal quantum efficiency of 81.2%, as a result of strain release and reduced density of threading dislocations revealed by transmission electron microscopy. Nanorod assembly suppresses the lateral guiding mode of light, and light extraction efficiency can be increased from 14.9% for planar DUV LEDs to 49.6% for nanorod DUV LEDs estimated by finite difference time domain simulations. Presented results offer the potential to solve the issue of external quantum efficiency limitation of DUV LED devices.

BackgroundThis study aims to investigate the alleviating effect of Acupuncture combined with Cognitive-Behavioral Therapy (CBT) on anxiety disorders among accounting professionals in the financial sharing services model. Anxiety disorders are prevalent among accounting professionals due to the high-pressure work environment, and effective interventions are essential to mitigate their negative impact.Subjects and MethodsA total of 120 accounting professionals working in the financial sharing services model were recruited for this study. They were randomly divided into three groups: the Acupuncture combined with CBT group (n=40), the CBT alone group (n=40), and the control group (n=40). The participants’ anxiety levels were measured using the Stanford Acute Stress Response Questionnaire (SASRQ) and the 3-min Confusion Assessment Scale (3D-CAM). The intervention was conducted over a period of six weeks, with regular sessions once a week.ResultsStatistical analysis using SPSS23.0 revealed a significant reduction in anxiety levels in both the Acupuncture combined with CBT group and the CBT alone group compared to the control group (P<0.001). However, the Acupuncture combined with CBT group exhibited a more substantial decrease in anxiety symptoms compared to the CBT alone group (P<0.05), as measured by the SASRQ and 3D-CAM. These results suggest that the combination therapy has a more significant effect on alleviating anxiety disorders among accounting professionals.ConclusionsThis study demonstrates the efficacy of acupuncture combined with CBT in reducing anxiety disorders among accounting professionals in the financial shared service model. These findings highlight the importance of combining complementary therapies, such as acupuncture, with established psychological interventions to achieve more comprehensive treatment outcomes.AcknowledgementThe 2017 Shaanxi Provincial Department of Education project (No. 17JK0942); The 2021 Xi’an Social Science Planning Fund project (No. JX163); The 2022 Shaanxi International Business School Science and Technology Innovation Team Construction Project (No. 2022KYTD05).

We report on the high-performance nanoporous (NP) GaN-based metal-insulator-semiconductor (MIS) ultraviolet (UV) photodetectors (PDs) with a thermal oxidized β-Ga_2O_3insulating layer. The devices show a high responsivity of 4.5×10^5  A/W and maximum external quantum efficiency of 1.55×10^8% at 360 nm under a 10 V applied bias, which are attributed to the trap-assisted tunneling induced internal gain mechanism. Correspondingly, a specific detectivity of 8.27×10^15 Jones and excellent optical switching repeatability are also observed in our fabricated PDs. The NP-GaN/β-Ga_2O_3 MIS UV PD may act as an excellent candidate for the application in UV photodetection due to the high performance and simple fabrication process.

We investigate the effect of temperature on the single-photon properties of four germanium/silicon (Ge/Si) single-photon avalanche photodiodes (SPADs), which are fabricated by Ge-on-Si direct epitaxial growth, Ge-on-Si two-step epitaxial growth, Ge/Si direct wafer bonding, and Si/Si hydrophobic bonding, respectively. It is found that the wafer-bonded Ge/Si SPAD exhibits extremely low dark current and dark count rate (DCR) compared with the epitaxial ones at 250 and 300 K. This implies that the wafer-bonding technique is a possible candidate for the fabrication of Ge/Si SPAD, which can be operated at near room temperature. Additionally, due to the low DCR and high operation temperature, the wafer-bonded Ge/Si SPAD shows extremely high pulse repetition rate (∼28  MHz in theory for DCR=10^8  Hz). That is, the wafer-bonded Ge/Si SPAD can be used in a high-speed field. Finally, the effect of voltage pulse width, number of photons per pulse, and hold-off time on the performance of the wafer-bonded Ge/Si SPAD at different temperatures is also clarified.

High quality AlGaN material growth and chip fabrication of monolithically integrated solar blind light-emitting diodes (LEDs), waveguides and photodetectors (PDs) on an AlGaN multi-quantum wells (MQWs) wafer are presented. The strong light constraint of waveguides is confirmed, in virtue of predominant ultraviolet transverse magnetic (TM) modes in transverse transmission. Unaffected by the ambient lighting, the PDs demonstrate sufficient photosensitivity to the optical signal traveling along waveguides owing to the emission-responsion spectral overlap. When the LEDs are operated at 20 mA current, the photo-to-dark current ratio (PDCR) in the PDs is up to seven orders of magnitude, which is higher than previously reported values for self-driven nitride PDs. The responsivity, specific detectivity and external quantum efficiency (EQE) of self-driven PDs are 186 A/W, 2.54 × 1014Jones and 8.4 × 104%, respectively. Benefiting from the effective optical isolation, the light crosstalk between adjacent devices is effectively reduced about 70%. The self-driven PDs exhibit 127/131 ns (rise/decay) rapid response in the on-chip communication. This work opens a pathway to drastically improve the ultraviolet-C (UVC) monolithically integrated systems and extends the fields of application in solar-blind communication.

Large-scale SiO_2 nanodisk arrays fabricated by nanospherical-lens lithography are embedded in the n-GaN and p-GaN layer of an InGaN/GaN light-emitting diode (LED) to produce photonic crystal (PC) structures for efficiency improvement. Following the obvious reduction of view angle, the light output power of bottom, top, and double PC LEDs is enhanced by 74.5%, 60.1%, and 88.2% compared to that of a conventional LED at 350 mA current, respectively. Despite the enhanced external quantum efficiency due to improved crystalline quality and light extraction, these PC LEDs exhibit lower peak efficiency current density and more serious efficiency droop than conventional LEDs. Combined with the rate equation, the droop mechanisms of PC LEDs have also been investigated experimentally and by simulation.

The high-quality semipolar (112̅2) AlGaN epitaxial films have been obtained on m-plane sapphire by metal–organic chemical vapor deposition. X-ray rocking curve measurements show the full-width at half-maximums of semipolar (112̅2)-oriented AlGaN films are 0.357° and 0.531° along [112̅3̅]AlGaNand [11̅00]AlGaN, respectively. The fabricated semipolar AlGaN metal–semiconductor–metal solar-blind ultraviolet (UV) photodetector (PD) exhibits a high responsivity of 1842 A/W. The fast response and reliability of the UV PD are ensured via fast switching with a rise and decay time of 90 ms and 53(720) ms, respectively. The UV PD exhibits a significant reduction in the dark current, that is, from 100 μA to 780 fA at 10 V, using a simple wet chemical etching to modify the surface properties of materials. The photo-to-dark-current ratio value of the etched UV PD reaches 4 orders of magnitude higher than the unetched UV PD under 270 nm illumination. These are attributed to the fact that KOH wet etching assists in eliminating the surface states and reconstructing the surface oxides. This work might provide a new potential for the development of solar-blind UV PDs with high performance.

Semipolar (11–22) AlN films grown on m-plane sapphire are investigated by flow-rate modulation epitaxy (FME). The full width of half maximums (FWHMs) of thin AlN film for X-ray rocking curves (XRCs) are reduced from 1398 arcsec for traditional growth to 865 arcsec for III-FME. The reduced defect density is attributed to prolonged Al mobility, which results in the transition of growth mode from quasi three-dimensional to two-dimensional step flow. On-axis FWHM[11–23]and off-axis FWHM[0002]of XRCs for 6 μm-thick III-FME AlN film are reduced to 346 arcsec and 641 arcsec, respectively. Metal–semiconductor–metal AlN-based photodetectors prepared on the as-grown (11–22) AlN demonstrate the remarkable operating characteristics with a high photo-to-dark-current ratio of 740–2.27 × 104and responsivity of 6–20 mA/W under 185 nm illumination, which implies promising application in vacuum-ultraviolet photodetection field.

Abstract- We use low temperature measure technique to identify the energy distribution profile of recoverable hole traps, created under Negative Bias Temperature stress in PNO pMOSFETs. It is found that the energy distribution profile is quite similar as that in SiO2 devices after long time NBT stress. The results could be explained that the nitrogen in SiO2 gate oxide doesn't generate new type recoverable hole traps distribution within the Si bandgap under NBT stress.

The worst case stress conditions for hot carrier degradation have been investigated in detail at the devices fabricated with CMOS technologies from 0.35um to 45nm. In nMOSFETs with long channel devices (L>0.18um), Vg at Ibmax and the lowest temperature is the worst case condition; For short channel devices (0.13 um [?] L [?] 0.18um), Vg @ Ibmax and Vg=Vd stress conditions result in comparable hot carrier damage; For the very short channel transistors (L<0.13um), the worst case stress condition has been found to be Vg=Vd instead of Vg@Ibmax. In this case, the higher temperature will induce worse hot carrier degradation. In pMOSFETs, the stress conditions Vg@Igmax is the worst case condition for the long channel devices (L[?]0.35um). As the channel length scaled to sub-0.25um, the worst case stress condition shifts from Vg@Igmax to VG = VD.

Memory properties of p-Si/ultrathin /metal capacitors have been investigated, in which all the high- dielectric films were derived by atomic layer deposition technique. Using a film as the charge trapping layer, a large memory window of and a high charge trap density of have been achieved. A 53% initial memory window can still be maintained after of retention even after adopting an ultrathin tunneling layer of . The experimental results also demonstrated that adding into films can improve the memory characteristics as compared with the memory capacitors employing pure as the charge trapping layer.

A geomagnetic regional model is constructed to provide a spatial-temporal variation of three orthogonal components (X, Y, Z) in Japan. In order to obtain a high temporal and spatial resolution, Natural Orthogonal Components (NOC) analysis and Spherical Cap Harmonic (SCH) analysis were employed to produce a spatial-temporal model based on the observed data from geomagnetic observatories and continuous geomagnetic stations. Using this model, we calculated the secular variation between 1999 and 2004 in Japan. The root mean square (RMS) scatter of the model is less than 3 nT, which indicates a good agreement between calculated and input data.

Human brain development is a complex process involving neural proliferation, differentiation, and migration that are directed by many essential cellular factors and drivers. Here, using the NetBID2 algorithm and developing human brain RNA sequencing dataset, we identify synaptotagmin-like 3 (SYTL3) as one of the top drivers of early human brain development. Interestingly, SYTL3 exhibits high activity but low expression in both early developmental human cortex and human embryonic stem cell (hESC)-derived neurons. Knockout of SYTL3 (SYTL3-KO) in human neurons or knockdown of Sytl3 in embryonic mouse cortex markedly promotes neuronal migration. SYTL3-KO causes an abnormal distribution of deep-layer neurons in brain organoids and reduces presynaptic neurotransmitter release in hESC-derived neurons. We further demonstrate that SYTL3-KO-accelerated neuronal migration is modulated by high expression of matrix metalloproteinases. Together, based on bioinformatics and biological experiments, we identify SYTL3 as a regulator of cortical neuronal migration in human and mouse developing brains.

TiO2/polymer films on quartz substrate were fabricated by layer-by-layer method and the ultrathin films showed photocatalytic activity for reduction of 1,1′-dimethyl-4,4′-bipyridinium dichloride on the irradiation of UV light.

Mid-infrared absorption spectra of BaBiO3and Ba0.93K0.07BiO3crystals were measured in the temperature range 5–500 K. The absorption coefficient in the band gap region for both semiconducting compounds was found to be almost temperature independent below 150 K and to increase substantially upon heating above 150 K. The applicability of bipolaran and exciton models for the explanation of the data is discussed.

Abstract: Normal state magnetic susceptibility has been measured for single-crystalline Ba1−xKxBiO3 synthesized by the electrochemical method The susceptibility has positive slope with increasing temperature and the temperature-independent part increases once with x beyond the metal-insulator transition at x=0.28. Paramagnetic contribution χm at 100K obtained by subtracting the ionic-core diamagnetic one shows a maximum near x=0.4, which may be due to Van-Hove singularity of the density of states in the multiple-cell structure of Ba1−xKxBiO3

Two different structures of single photon avalanche diode(SPAD) fabricated by 0.13 μm flash process technology are presented. The structure-1 uses low implanted p-well surrounding the active area as the guard ring which prevents the periphery breakdown, while for the structure-2, a virtual guard ring with the deep retrograde n-well doping is designed. The characteristics of the two detectors with the same active area diameter are presented. The two SPAD structures exhibit relatively different dark and light performance. The first structure exhibits a typical dark count rate of 18 kHz at the room temperature and a maximum photon detection efficiency of 15%, while the second structure exhibits a dark count rate of 23 kHz and a maximum photon detection efficiency of 28%. The comparison of the two structures is therefore promising for the further advanced SPAD design.

In this study, the low voltage CHEI program is used to achieve single electron injection in nitride layer of nano-scaled SONOS (polysilicon-oxide-nitride-silicon) devices. By investigating various CHEI conditions and different temperature, the best single electron transfer condition is determined. Under this condition, the single electron induced current steps are in good agreement with theoretical result.

Accurate extraction of source/drain series resistance (Rs/Rd) is crucial to the modeling and application of deeply scaled MOSFET devices. In this study, we investigate three methods of extracting source/drain series resistance for deep submicron MOSFETs, including the Y-function method, the trans-conductance method and the direct I-Vmethod. The results show that resistance obtained from direct I-Vmethod is smaller than both trans-conductance method and Y function method. Theory analysis illustrate that the trans-conductance method and Y-function method give an overestimation of resistance due to the neglect of the mobility degradation under the relative high gate voltage. Relatively, direct I-Vmethod is a promising method for estimating source/drain resistance in deep submicron MOSFETs.

The worst case stress conditions for hot carrier degradation have been investigated in detail at the devices fabricated with CMOS technologies from 0.35µm to 45nm. In nMOSFETs with long channel devices (L>0.18µm), Vg at Ibmax and the lowest temperature is the worst case condition; For short channel devices (0.13 µm ≤ L ≤ 0.18μm), Vg @ Ibmax and Vg=Vd stress conditions result in comparable hot carrier damage; For the very short channel transistors (L<0.13µm), the worst case stress condition has been found to be Vg=Vd instead of Vg@Ibmax. In this case, the higher temperature will induce worse hot carrier degradation. In pMOSFETs, the stress conditions Vg@Igmax is the worst case condition for the long channel devices (L≥0.35µm). As the channel length scaled to sub-0.25µm, the worst case stress condition shifts from Vg@Igmax to VG = VD.

Abstract- We use low temperature measure technique to identify the energy distribution profile of recoverable hole traps, created under Negative Bias Temperature stress in PNO pMOSFETs. It is found that the energy distribution profile is quite similar as that in SiO2 devices after long time NBT stress. The results could be explained that the nitrogen in SiO2 gate oxide doesn't generate new type recoverable hole traps distribution within the Si bandgap under NBT stress.

Memory properties of p-Si/ultrathin Al2O3∕(HfO2)0.8(Al2O3)0.2∕Al2O3/metal capacitors have been investigated, in which all the high-kdielectric films were derived by atomic layer deposition technique. Using a (HfO2)0.8(Al2O3)0.2film as the charge trapping layer, a large memory window of 5.7Vand a high charge trap density of 2.4×1013cm−2have been achieved. A 53% initial memory window can still be maintained after 10yearsof retention even after adopting an ultrathin tunneling Al2O3layer of 2nm. The experimental results also demonstrated that adding Al2O3into HfO2films can improve the memory characteristics as compared with the memory capacitors employing pure HfO2as the charge trapping layer.