1. Full-composition-graded InxGa1−xN films grown by molecular beam epitaxy.
- Author
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Zheng, X. T., Wang, T., Wang, P., Sun, X. X., Wang, D., Chen, Z. Y., Quach, P., Wang, Y. X., Yang, X. L., Xu, F. J., Qin, Z. X., Yu, T. J., Ge, W. K., Shen, B., and Wang, X. Q.
- Subjects
MOLECULAR beam epitaxy ,QUANTUM wells ,MONOMOLECULAR films ,SOLAR spectra ,TEMPERATURE control - Abstract
We demonstrate the growth of full-composition-graded In
x Ga1−x N (0 ≤ x ≤ 1) on a GaN/sapphire template using plasma-assisted molecular beam epitaxy. Composition of indium in Inx Ga1−x N films is controlled by growth temperature and gallium flux. It was found that In composition increases gradually from x = 0 (GaN) to x = 1 (InN) along the growth direction accompanied by a gradual strain relaxation. At the initial stage of growth, multiple quantum wells like structures with low and high In composition Inx Ga1−x N layers are spontaneously formed, effectively relaxing the in-plane strain. Finally, the graded Inx Ga1−x N film exhibits a broadband absorption covering the full solar spectrum, which provides a promising path for the design and production of graded Inx Ga1−x N based photovoltaic devices. [ABSTRACT FROM AUTHOR]- Published
- 2020
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