1. Optimization of linearity at high electrical field for dual threshold coupling AlGaN/GaN HEMT applied in Ka-band applications.
- Author
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Wang, Peng-Fei, Mi, Min-Han, Du, Xiang, Zhou, Yu-Wei, Liu, Jie-Long, Chen, Zhi-Hong, An, Si-Rui, Chen, Yi-Lin, Zhu, Jie-Jie, Zheng, Xue-Feng, Ma, Xiao-Hua, and Hao, Yue
- Subjects
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MILLIMETER wave devices , *GALLIUM nitride , *POWER density - Abstract
In this work, a high linearity AlGaN/GaN HEMT integrated dual threshold coupling (DT) technology and Schottky–Ohmic drain (SOD) were fabricated and analyzed. Since the architecture of DT synthesized planar- and recess-HEMT periodically along the gate width, SOD alleviated the peak electric field (E-field) around the gate region and the peak transconductance (Gm-max) of 248 mS/mm with the associated transconductance plateau of ∼4.0 V at Vds = 28 V was obtained, which is evidently flatter than that of HEMT without the SOD structure. Attributed to the improved Gm linearity at high E-field, the DT-SOD HEMT exhibits the predicted linearity figure of merit of 5–13 dB when biased at class AB operation, which is ∼10 dB higher than that of DT-HEMT. Moreover, the fabricated device yields a nearly constant fT/fmax of 47/118 GHz over a wide gate voltage, and load-pull measurements at 30 GHz reveal that these devices deliver output power density (Pout) of 7.8 W/mm with the associated 1-dB compression point (P1dB) of 28.5 dBm at Vds = 28 V. The experimental results indicate that the employment of DT technology and SOD structure is an attractive approach to enhance the linearity at high E-field for millimeter wave devices. [ABSTRACT FROM AUTHOR]
- Published
- 2022
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