18 results on '"Bhuiyan, A. F. M. Anhar Uddin"'
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2. Scaled β-Ga2O3 thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz fMAX
3. Electrical characteristics of in situ Mg-doped β-Ga2O3 current-blocking layer for vertical devices.
4. Temperature dependent characteristics of β-Ga2O3 FinFETs by MacEtch.
5. The role of carbon and C-H neutralization in MOCVD β-Ga2O3 using TMGa as precursor.
6. Scaled β-Ga2O3 thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz fMAX.
7. Planar and three-dimensional damage-free etching of β-Ga2O3 using atomic gallium flux
8. Band offsets of (100)β -(AlxGa1−x)2O3/ β -Ga2O3 heterointerfaces grown via MOCVD
9. Mg acceptor doping in MOCVD (010) β-Ga2O3
10. Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β-Ga2O3
11. MOCVD growth of β-phase (AlxGa1−x)2O3 on ( 2 ¯01) β-Ga2O3 substrates
12. A combined approach of atom probe tomography and unsupervised machine learning to understand phase transformation in (AlxGa1−x)2O3
13. Planar and three-dimensional damage-free etching of β-Ga2O3 using atomic gallium flux.
14. Band offsets of (100) β-(AlxGa1−x)2O3/β-Ga2O3 heterointerfaces grown via MOCVD.
15. MOCVD growth of β-phase (AlxGa1−x)2O3 on (2¯01) β-Ga2O3 substrates.
16. A combined approach of atom probe tomography and unsupervised machine learning to understand phase transformation in (AlxGa1-x)2O3.
17. Scaled β-Ga2O3 thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz fMAX.
18. A combined approach of atom probe tomography and unsupervised machine learning to understand phase transformation in (AlxGa1-x)2O3.
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