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Your search keyword '"Nakamura, Y."' showing total 46 results
Start Over Author "Nakamura, Y." Journal applied physics letters
46 results on '"Nakamura, Y."'

4. Velocity-dependent wave forms of piezoelectric elements undergoing collisions with iron particles having velocities ranging from 5 to 63 km/s

Author

Grun, E., Srama, R., Miyachi, T., Fujii, M., Hasebe, N., Kobayashi, M. N., Kuraza, G., Nagashima, A., Nakamura, Y., Nogami, K., Iwai, T., Sasaki, S., Muranaga, K., Ohashi, H., Hasegawa, Sunao, Yano, Hajime, Shibata, H., Okada, N., and Tou, T.

Subjects
Shock wave, Physics, Physics and Astronomy (miscellaneous), Young's modulus, Piezoelectricity, Pulse (physics), symbols.namesake, Classical mechanics, Rise time, symbols, Hypervelocity, Particle, Particle velocity, Atomic physics
Abstract

著者人数: 19名, Accepted: 2005-04-04, 資料番号: SA1003331000

Published
2005

10. Flux-driven Josephson parametric amplifier

Author

Yamamoto, T., primary, Inomata, K., additional, Watanabe, M., additional, Matsuba, K., additional, Miyazaki, T., additional, Oliver, W. D., additional, Nakamura, Y., additional, and Tsai, J. S., additional

Published
2008
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39. A variable-emittance radiator based on a metal–insulator transition of (La,Sr)MnO[sub 3] thin films.

Author

Shimakawa, Y., Yoshitake, T., Kubo, Y., Machida, T., Shinagawa, K., Okamoto, A., Nakamura, Y., Ochi, A., Tachikawa, S., and Ohnishi, A.

Subjects
THIN films, METAL insulator semiconductors, RADIATORS
Abstract

Variable-emittance radiators based on the metal—insulator transition of (La, Sr)MnO[sub 3] thin films have been developed. The emittance property of the films was evaluated from infrared reflectance spectra; that is, the (La, Sr)MnO[sub 3] thin films show low emittance at low temperature but high emittance at high temperature. Moreover, the emittance property significantly changes at the metal—insulator transition temperature, where the material changes from a highly reflective (i.e., low emissive) metal to a less reflective (i.e., high emissive) insulator. The (La, Sr)MnO[sub 3] thin films fitted on a spacecraft surface can, therefore, be used to automatically control the emissive heat transfer from the spacecraft without the need for any electrical power. The developed radiators also greatly reduce the weight and production cost of the thermal control devices. The dependence of the emittance property on film thickness reveals that 1500-nm-thick films can be used for variable-emittance radiators. [ABSTRACT FROM AUTHOR]

Published
2002
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40. Al/Al[sub 2]O[sub 3]/Al single electron transistors operable up to 30 K utilizing anodization....

Author

Nakamura, Y. and Klein, D.L.

Subjects
*ANODIC oxidation of metals, *JUNCTION transistors, *ALUMINUM oxide
Abstract

Proposes an anodization controlled miniaturization enhancement technique in fabricating ultrasmall tunnel junctions. Details on aluminum oxide barrier utilized in tunnel junctions; Generation of single electron transistor; Correlation between oxidized layer and anodization voltage on aluminum film thickness.

Published
1996
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42. Modulation of one-dimensional electron density in n-AlGaAs/GaAs edge quantum wire transistor.

Author

Nakamura, Y. and Tsuchiya, M.

Subjects
*ELECTRONIC modulation, *ELECTRON distribution, *NANOWIRES, *TRANSISTORS
Abstract

Examines the modulation of one-dimensional electron density in n-aluminum gallium arsenide/gallium arsenide edge quantum wire transistor. Preparation of the wires by molecular beam epitaxy; Demonstration of a field effect transistor action; Display of nonlinearity caused by the magnetic depopulation of one-dimensional subbands.

Published
1994
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43. High resolution electron microscopy of misfit dislocations in the GaAs/Si epitaxial interface.

Author

Otsuka, N., Choi, C., Nakamura, Y., Nagakura, S., Fischer, R., Peng, C. K., and Morkoç, H.

Subjects
GALLIUM arsenide, EPITAXY, ATOMIC structure
Abstract

Recent studies have shown that high quality GaAs films can be grown by molecular beam epitaxy on Si substrates whose surfaces are slightly tilted from the (100) plane. In order to investigate the effect of the tilting of substrate surfaces on the formation of defects, the atomic structure in the GaAs/Si epitaxial interface has been studied with a 1-MV ultrahigh vacuum, high voltage electron microscope. Two types of misfit dislocations, one with Burgers vectors parallel to the interface and the other with Burgers vectors inclined from the interface by 45°, were found in the epitaxial interface. The observation of two cross-sectional samples perpendicular to each other has shown that the tilting of the substrate surface directly influences the formation of these two types of misfit dislocations. A possible mechanism of the reduction of threading dislocations by tilting the substrate surface is discussed based on these observations. [ABSTRACT FROM AUTHOR]

Published
1986
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46. In situ scanning tunneling microscopic study of polymerization of C[sub 60] clusters induced by electron injection from the probe tips.

Author

Nakamura, Y., Mera, Y., and Maeda, K.

Subjects
*POLYMERIZATION, *CARBON compounds, *EPITAXY
Abstract

Polymerization of C[sub 60] clusters epitaxially grown on Si(111)-(7x7) substrates was found to be induced by electron injection from the probe tips of scanning tunneling microscopes (STM) as the sample bias was increased from +4.0 to +5.5 V, exhibiting an evolution behavior characterized by an incubation, a linear growth, and a saturation. The incubation time and the growth rate are dependent greatly on the sample site, which is explained by a model taking into account the pre-existing stress as the driving force of the polymerization and the internal stress built up as a consequence of polymerization producing a stress for backward reactions. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Published
2000
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