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In the above paper, Iannazzo et al. propose an improvement of the compact model by introducing a new expression for the description of the bias-dependent saturation velocity. They compare their model to simulation results using the compact model. We comment on this paper, since Iannazzo et al. use inappropriate parameter values for the compact model. We further show that with suitable parameter values, the results from both models are very close. [ABSTRACT FROM AUTHOR]

In the paper [1], the authors would like to make the following corrections. 1)

Equation (11) needs to be read as \begin{equation*} V_{G2} =V_{FB} -V_{FB} \frac {\ln [1\!+\exp (A_{1} (1\!-\!(V_{G} \!-\!Vy)/V_{FB} ))] }{\ln [1+\exp (A_{1} )] }. \end{equation*} [ABSTRACT FROM AUTHOR]

Corrections to formulas and equations for the paper "A Compact Scattering Model for the Nanoscale Double-Gate MOSFET" (Rahman, A. and Lundstrom, M.S.; IEEE Trans. Electron Devices, vol. 49, no. 3, pp. 481?489, Mar. 2002) )are presented. [ABSTRACT FROM PUBLISHER]