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Resistive switching properties of hafnium oxide and manganese oxide double-layer films sandwiched between Pt bottom electrode and Ag top electrode have been investigated. The devices exhibited bipolar resistive switching. As compared with the devices with hafnium oxide and manganese oxide single layer, the double-layered devices showed better resistive switching behaviors, including forming-free behavior, a high resistance ratio (>105–6), and good retention properties. The forming-free behavior of the bilayer device is very useful for resistive random access memory applications. The high resistance ratio is beneficial to distinguish the storage information. The formation and disruption of Ag conductive filament in the oxide layers led to the resistance changes. [ABSTRACT FROM AUTHOR]

The fabrication of a manganese oxide and cerium oxide bilayer structure with a 5 × 5 crossbar array was demonstrated. The resistive switching characteristics of Ag/MnO/CeO2/Pt devices were investigated. The devices showed stable forming-free bipolar resistive switching properties with high resistance ratio (>105–6). Resistive switching phenomena were ascribed to the formation and rupture of oxygen-deficient conductive filaments. The mechanisms of ohmic and Schottky conductions were investigated to determine the resistance switching mechanism. [ABSTRACT FROM AUTHOR]