Search

The influence of substrate and antiferromagnetic film thicknesses on the characteristics of the exchange-bias field of NiFe/FeMn thin films was investigated. The results showed that increased FeMn thickness induced the blocking temperature to go lower. When the thickness of the antiferromagnetic film was decreased, the exchange-bias field of the structure was significantly improved.

The electrical and material characteristics of cobalt silicided p+n junctions fabricated by implant through silicide technology were investigated. The results showed that during the high-temperature annealing process, Co silicide released high surface energy throught silicon precipitation and film agglomeration. Co silicide was observed to be an ideal energy barrier and dopant diffusion source for the implant through silicide method.

The fluorine-buffer model facilitates the introduction of fluorine at the silicide/silicon interface to enhance the thermal stability of the interfacial system. Fluorinated silicide film grains grow more rapidly than unfluorinated grains. The buffer model is superior to the grain growth retardation model that restricts the fluorine ions to the silicide layer.

Deals with a study which investigated the thermal stability of cobalt silicide thin films on silicon(100). Experimental details; Results; Discussion.

Presents a study that investigated low-termperature reaction of thin-film platinum with silicon. Sheet resistance measurement of silicide formation sequence; Use nitrogen furnace; X-ray diffraction analysis.

Studies the capability of using platinum and platinum-silicon in the ion implantation through metal or metal silicide technique. Procedure of the experiment; Measured electrical characteristics of the sample; Results of the leakage current analysis; Conclusion.

Presents a study that investigated the characteristics of PtSi-silicided p[sup+] n shallow junctions fabricated by implanting BF[sub2][sup+] ions and low-temperature furnace annealing. Benefits of self-aligned silicide process; Procedures in preparing the samples; Summary of the sample identification number and the key process conditions.

Presents a technique based on the ion implantation of fluoride ion or species containing fluoride atoms into the silicon substrate underneath the platinum silicide (PtSi) layer. Function of PtSi; Material analysis of the PtSi under various annealing conditions; Silicide film characteristics.

Presents information on a study which investigated junction formation by As[sup+] ion implantation into CoSi[sub2] and subsequent drive-in annealing. Illustration of the as-implanted arsenic profiles; Factors which may influence the n[sup+]p junction characteristics; Fabrication of samples.

Presents a study which investigated the properties of nickel iron X, wherein X is aluminum, gold, niobium, palladium, platinum, silicon and zirconium, ternary films for soft-film biasing of the magnetoresistive trilayer sensor. Experimental details; Results and discussion; Conclusion.

Presents a study that formed a shallow silicided n[sup+]p junction by implanting arsenic ions into platinum or platinum silicide films followed by low-temperature furnace annealing in the nitrogen ambient. Benefits from implanting a dopant through metal/silicide; Reason that the ion implantation through metal sample exhibits smaller leakage than ion implantation through metal silicide sample; Annealing temperature dependence of the forward ideality factor.

Presents information on a study which reactively sputtered magnetite films onto silicon substrates in an argon + oxygen gas environment from a target containing iron and osmium. Methodology of the study; Results and discussion; Conclusions.

Presents information on a study which systematically evaluated the microstructural dependence of iron oxide thin films on film preparation conditions. Methodology of the study; Results and discussion; Conclusions.

Reports on the fabrication and read-write characteristics of laminated CoZr/Ta film heads including the amplitude stability and the peak shift. Composition of the CoZr target used; Technique used to study the crystal structure of the film; Method used for evaluating the stability of thin-film heads.