Search

Presents a study which investigated the defects of amorphous silicon dioxide films grown by thermal and plasma chemical vapor deposition in a tetraethylorthosilicate and oxygen atmosphere. DOppler broadening parameter in the silicon dioxide film; Experimentation on the oxidation of identical wafer; Results of the angular correlation of annihilation radiation.

Discusses the results of a study on vacancy formation in fluorine-implanted silicon using a slow positron beam. Consequence of positron diffusion and the breadth of the positron implantation profile; Implications of the vacancies caused by ion implantation; Techniques used in demonstrating the correlation of defects present and vacancies in silicon.