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70 results on '"Nitrogen compounds -- Electric properties"'

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1. Thermal recovery from stress-induced high-[kappa] dielectric film degradation

2. Hugoniot of beta-SiAlON and high-pressure phase transitions

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3. Effect of metal liner on electromigration in Cu Damascene lines

4. Growth and characterization of 4H-SiC epliayers on substrates with different off-cut angles

5. Surface morphological evolution of epitaxial CrN(001) layers

6. Electric-field generated by the combustion of titanium in nitrogen

7. Molecular-beam epitaxy and characteristics of GaN(sub y)As(sub 1-x-y)Bi(sub x)

8. First-principles investigations of nitrogen-doping effects on defect aggregation processes in Czochralski Si

9. Hot-electron-temperature relaxation time in two-dimensional electron gas: AlGaN/GaN at 80 K

10. Monte Carlo based analysis of intermodulation distortion behavior in GaN-Al(sub x)Ga(sub 1-x)N high electron mobility transistors for microwave applications

11. Micromagnetic studies of high frequency permeability in Fe-M-N thin films with macroscopic and mesoscopic sizes

12. Epitaxial NaCl structure delta-TaN(sub x)(001): Electronic transport properties, elastic modulus, and hardness versus N/Ta ratio

13. Optical and electronic properties of TiC(sub x)N(sub y) films

14. Resonant ultrasound spectroscopy measurement of the elastic constants of cyclotrimethylene trinitramine

15. Shallow buried SiN(sub x) layers

16. Investigation of the crystallinity of N and Te codoped Zn-polar ZnO films grown by plasma-assisted molecular-beam epitaxy

17. Optical studies of degradation of AlGaN quantum well based deep ultraviolet light emitting diodes

18. Noise temperature and beam pattern of an NbN hot electron bolometer mixer at 5.25 THz

19. The effect of gas environment on electrical heating in suspended carbon nanotubes

20. SiBCN materials for high-temperature applications: atomistic origin of electrical conductivity

21. Interpretation of recombination at c-Si/Si[N.sub.x] interfaces by surface damage

22. Resonant characteristics of ultranarrow SiCN nanomechanical resonators

23. In-plane optical anisotropy in GaAsN/GaAs single-quantum well investigated by reflectance-difference spectroscopy

24. Hopping conduction in nitrogen doped ZnO in the temperature range 10-300 K

25. Effect of nitrogen plasma power on defect levels in Ni/n-GaN Schottky diodes grown by molecular beam epitaxy

26. Highly mismatched crystalline and amorphous Ga[N.sub.1-x][As.sub.x] alloys in the whole composition range

27. Surface electron property of SiC correlated with N[O.sub.2] adsorption

28. Stability and electronic properties of native defects and substitutional impurities in GaN nanotubes

29. Electronic structure and effective masses of InN under pressure

30. Copper precipitation in nitrogen-doped Czochralski silicon

31. Hydrogen diffusion behavior in N doped ZnO: first-principles study

32. Photoelectron spectroscopic investigation of nitrogen chemical states in ZnO: (N, Ga) thin films

33. Electron effective mass and mobility in heavily doped n-GaAsN probed by Raman scattering

34. Comment on Band gap bowing and electron localization of [Ga.sub.x][In.sub.1-x]N [J.Appl]

35. Characterization of plasma etching damage on p-type GaN using Schottky diodes

36. Formation mechanism of Ohmic constants on AlGaN/GaN heterostructure: electrical and microstructural characterizations

37. Nitrogen effect on the dust presence and behavior in a radio frequency C[H.sub.4]/[N.sub.2] discharge

38. Crystal and electronic structures of the complex hydride [Li.sub.4]B[N.sub.3][H.sub.10]

39. Structural properties of reactively sputtered W-Si-N thin films

40. Electronic structure of germanium nitride considered for gate dielectrics

41. Effect of surface oxidation on electron transport in InN thin films

42. The nature of nitrogen related point defects in common forms of InN

43. Deviations from the local field approximation in negative streamer heads

44. High temperature scanning Hall probe microscopy using AlGaN/GaN two dimensional electron gas micro-Hall probes

45. Enhanced oxidation of TiAlN barriers integrated in three-dimensional ferroelectric capacitor structures

46. The effect of hydrogen on [Cu.sub.3]N thin films deposited by radio frequency magnetron sputtering

47. High frequency characteristics of FeCoN thin films fabricated by sputtering at various (Ar+[N.sub.2]) gas flow rates

48. Influence of the direct response on the heterodyne sensitivity of hot electron bolometer mixers

49. Detailed structural analysis and dielectric properties of silicon nitride film fabricated using fabricated using pure nitrogen plasma generated near atmospheric pressure

50. Growth of TiN/GaN metal/semiconductor multilayers by reactive pulsed laser deposition