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Focuses on a study that reported the variations in impedance with frequency of metal-oxide-semiconductor structures on polycrystalline silicon. Methods; Discussion; Conclusion.

Presents a study which examined particulate composites consisting of barium titanate, graphite and rubber. Mechanism proposed to explain positive voltage coefficient of resistance; Model for the composite; Estimation of resistivity; Use of composites as varistors.

Details a study which measured the capacitance-voltage of grain boundaries made on cast polycrystalline silicon wafers. Description of the experimental grain boundary capacitance-voltage curves; Calculation of capacitance-voltage curves; Results and discussion.

Describes the voltage-current characteristics of tin-oxide-silicon interfaces prepared by spray pyrolysis. Theoretical model for the explanation of the observed characteristics at low currents; Overview of the proposed carrier transport mechanism; Formula for resistance drop.

Focuses on the origin of the observed negative-resistance characteristics of polycrystalline silicon resistors. Effects of self-heating of the resistor on the transportation of carriers across the grain-boundary barrier; Equation of the potential barrier at the grain boundary; Description of the structure of the polycrystalline silicon resistor.

Presents a study that assessed the voltage-current characteristics in the breakdown region of p-n junctions made on polycrystalline silicon of large grain size. Information on the voltage-current characteristics of a large number of monosilicon and polysilicon diodes; Examination of the field-dependent emission of carriers from traps in the grain boundaries; Analysis of the electric field in the curved junction.