1. Ammonothermal growth of GaN crystals on HVPE-GaN seeds prepared with the use of ammonothermal substrates.
- Author
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Kucharski, R., Zajac, M., Puchalski, A., Sochacki, T., Bockowski, M., Weyher, J.L., Iwinska, M., Serafinczuk, J., Kudrawiec, R., and Siemiątkowski, Z.
- Subjects
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CRYSTAL growth , *VAPOR phase epitaxial growth , *GALLIUM nitride , *CRYSTALLIZATION , *OPTICAL properties , *DISLOCATION density - Abstract
Results of gallium nitride crystallization by ammonothermal method are presented. GaN crystals grown earlier by a HVPE method on an ammonothermal GaN substrate and an MOCVD-GaN/sapphire template were used as seeds. Structural and optical properties of the obtained materials are studied and compared. Large radius of curvature (>100 m) and low dislocation density (7×10 4 cm −2 ) can be reproduced in the ammonothermal method using an HVPE-GaN seed grown before on ammonothermal GaN. This proves that the use of HVPE-GaN grown on ammonothermal seeds allows to reproduce high crystallinity in a subsequent ammonothermal growth. It also demonstrates that a much more effective multiplication process of high quality GaN can be launched using a combination of the ammonothermal and HVPE methods. [ABSTRACT FROM AUTHOR]
- Published
- 2015
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