1. Diamond emitter arrays with uniform self-aligned gate built from silicon-on-insulator wafer
- Author
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S. E. Kerns, J.L. Davidson, David V. Kerns, Weng Poo Kang, and Anurat Wisitsoraat
- Subjects
Materials science ,business.industry ,Field emitter array ,General Engineering ,Diamond ,Nanotechnology ,Self-aligned gate ,engineering.material ,Cathode ,law.invention ,Anode ,Computer Science::Emerging Technologies ,Triode ,Gate oxide ,law ,engineering ,Optoelectronics ,business ,Common emitter - Abstract
A self-aligned gate fabrication technique utilizing silicon-on-insulator technology is developed for the fabrication of large uniform arrays of diamond field emitters with self-aligned gate and sharp tip cathode. A uniform array with millions of gated diamond microemitters was reproducibly achieved. The diamond field emitter array, tested in triode configuration with an external anode, has a low turn-on gate voltage of 26 V. A high emission current of 1 μA per tip was obtained at a gate voltage of approximately 60 V and an anode voltage of 200 V. The ability to modulate emission current at low gate voltage allows more practical usage of a diamond field emitter in vacuum microelectronics.
- Published
- 2001