1. Threading dislocation reduction in epitaxial GaN using V-groove patterned sapphire substrate with embedded silica nanospheres.
- Author
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Han, Nam, Park, Young Jae, Han, Min, Ryu, Beo Deul, Ko, Kang Bok, Chandramohan, S., Choi, Chel-Jong, Cuong, Tran Viet, and Hong, Chang-Hee
- Subjects
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EPITAXY , *GALLIUM nitride , *SAPPHIRES , *SILICA nanoparticles , *CHEMICAL vapor deposition , *TRANSMISSION electron microscopy - Abstract
Abstract: A dramatic reduction in threading dislocation density and stress-relaxation was simultaneously achieved in GaN epilayer using a silica nanosphere embedded structure on V-groove patterned sapphire substrate by metal-organic chemical vapor deposition. By depositing silica nanospheres at two different instances during a growth process, a two-step growth that included selective area growth and lateral overgrowth was initiated. This approach led to GaN template of high crystal quality, which was confirmed from x-ray diffraction rocking curve and micro-Raman measurements and further corroborated by transmission electron microscopy. GaN light-emitting diode fabricated by this strategy showed a significant enhancement in the light output power. [Copyright &y& Elsevier]
- Published
- 2014
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