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Due to the suitable bandgap structure, efficient conversion rates of photon to electron, adjustable optical bandgap, high electron mobility/aspect ratio, low defects, and outstanding optical and electrical properties for device design, III–V semiconductors have shown excellent properties for optoelectronic applications, including photodiodes, photodetectors, solar cells, photocatalysis, etc. In particular, III–V nanostructures have attracted considerable interest as a promising photodetector platform, where high-performance photodetectors can be achieved based on the geometry-related light absorption and carrier transport properties of III–V materials. However, the detection ranges from Ultraviolet to Terahertz including broadband photodetectors of III–V semiconductors still have not been more broadly development despite significant efforts to obtain the high performance of III–V semiconductors. Therefore, the recent development of III–V photodetectors in a broad detection range from Ultraviolet to Terahertz, and future requirements are highly desired. In this review, the recent development of photodetectors based on III–V semiconductor with different detection range is discussed. First, the bandgap of III–V materials and synthesis methods of III–V nanostructures are explored, subsequently, the detection mechanism and key figures-of-merit for the photodetectors are introduced, and then the device performance and emerging applications of photodetectors are provided. Lastly, the challenges and future research directions of III–V materials for photodetectors are presented. [ABSTRACT FROM AUTHOR]

Although enhanced performance of photovoltaic devices by embedding metal nanoparticles in charge transport layer, doping into active layer bulk, decorating the active layer surface, and inserting at the interface between semiconductor and the electrode were reported, the effect of incorporating metal NPs at the interface of single crystal semiconductor and perovskite is rarely tackled. Herein the effects of incorporating Ag nanoparticals (AgNPs) at p-Si/MAPbI3 perovskite interface on the photodiode performance were investigated. The results showed that compared with the reference device (without AgNPs) the photoresponsivity of the device incorporating AgNPs is greatly improved with the exception of light with wavelengths falling in the spectral range where AgNPs have strong optical absorption. This effect is extremely significant for relatively shorter wavelengths in the visible region, and a maximal improvement of around 10.6 times in photoresponsivity was achieved. The physical origin of the exception for spectral range that AgNPs have strong optical absorption is the cancelation of scatter resulted enhancement through AgNPs by band-to-band absorption resulted reduction of photocurrent, in which the generated electron has energy near the fermi level and the hole has large effective mass, which relax by nonradiative recombination, thus making not contribution to the photocurrent. More importantly, the AgNP decorated device showed much faster photo response speed than the reference device, and a maximal improvement of around 7.9 times in rise and fall time was achieved. These findings provide a novel approach for high responsive and high speed detection for weak light. [ABSTRACT FROM AUTHOR]

Photodetectors are essential optoelectronic devices that play a critical role in modern technology by converting optical signals into electrical signals, which are one of the most important sensors of the informational devices in current 'Internet of Things' era. Two-dimensional (2D) material-based photodetectors have excellent performance, simple design and effortless fabrication processes, as well as enormous potential for fabricating highly integrated and efficient optoelectronic devices, which has attracted extensive research attention in recent years. The introduction of spontaneous polarization ferroelectric materials further enhances the performance of 2D photodetectors, moreover, companying with the reduction of power consumption. This article reviews the recent advances of materials, devices in ferroelectric-modulated photodetectors. This review starts with the introduce of the basic terms and concepts of the photodetector and various ferroelectric materials applied in 2D photodetectors, then presents a variety of typical device structures, fundamental mechanisms and potential applications under ferroelectric polarization modulation. Finally, we summarize the leading challenges currently confronting ferroelectric-modulated photodetectors and outline their future perspectives. [ABSTRACT FROM AUTHOR]

The self-powered PVP-Co@C nanofibers/n-GaAs heterojunction photodetector (HJPD) was fabricated by electrospinning of the nanofibers onto GaAs. An excellent rectification ratio of 6.60 × 106 was obtained from I – V measurements of the device in the dark. The I – V measurements of the fabricated device under 365 nm, 395 nm and 850 nm lights, as well as I – V measurements in visible light depending on the light intensity, were performed. The HJPD demonstrated excellent photodetection performance in terms of a good responsivity of ∼225 mA W−1 (at −1.72 V) and at zero bias, an impressive detectivity of 6.28 × 1012 Jones, and a high on/off ratio of 8.38 × 105, all at 365 nm wavelength. In addition, the maximum external quantum efficiency and NPDR values were 3495% (V = −1.72 V) and 2.60 × 1010 W−1 (V = 0.0 V), respectively, while the minimum NEP value was ∼10−14 W.Hz−1/2 for 365 nm at V = 0.V volts. The HJPD also exhibited good long-term stability in air after 30 d without any encapsulation. [ABSTRACT FROM AUTHOR]

Perovskite quantum dots (QDs) and organic materials have great research potential in the field of optoelectronic devices. In this paper, MEH-PPV/CsPbBr3 heterojunction photodetectors (PDs) are prepared by spin coating method based on the good photoelectric properties of CsPbBr3 perovskite QDs and MEH-PPV. The MEH-PPV/CsPbBr3 heterojunction improves the energy level arrangement, and CsPbBr3 QDs can passivate the surface defects of MEH-PPV films to achieve effective charge separation and transfer, thus inhibiting the dark current and improving the photoelectric performance of the device. Under 532 nm laser irradiation, the responsivity (R) of MEH-PPV/CsPbBr3 heterojunction PD is 11.98 A W−1, the specific detectivity (D *) is 6.98 × 1011 Jones, and the response time is 15/16 ms. This work provides experience for the study of perovskite QDs and organic materials heterojunction optoelectronic devices. [ABSTRACT FROM AUTHOR]

Vertical semiconductor van der Waals heterojunctions are essential for fabricating high-performance photodetectors. However, the range of the spectral response and defect states of semiconductor materials are two critical factors affecting the performance of photodetectors. In this work, the spectral response range of WS2 was changed through WS2 band gap regulation, and a self-powered vertical WS1.08Se0.92/Si heterojunction photodetector with MXene electrode was prepared by synthesizing WS1.08Se0.92 film on Si substrate and vertically stacking Ti3C2T x MXene on the film. Due to the electron collection of MXene and the wonderful junction quality of WS1.08Se0.92/Si, the photodetector can detect near-infrared light in the range of 980–1310 nm, which exceed the detection limit of WS1.08Se0.92. And the device had high sensitivity in the broadband. The responsivity was 4.58 A W−1, the specific detectivity was 4.58 × 1011 Jones, the on/off ratio was 4.95 × 103, and the fast response time was 9.81/9.03 μ s. These properties are superior to previously reported WS2-based photodetectors. Vertical structure, Energy band tuning, and MXene electrode provide a new idea for preparing broadband high-performance and self-powered photodetector. [ABSTRACT FROM AUTHOR]

Yb3+ doped CsPbCl3 metal halide perovskite photodetectors (PDs) in the structure of CsPbCl3(50 nm)/YbCl3(x nm)/CsPbCl3(50 nm), in which x ranges from 10 to 40 nm corresponding to the molar ratio from 6.3% to 25.2%, are fabricated by thermal evaporation on Si/SiO2 substrate. Photoresponse from 350 to 980 nm have been achieved with the optimal responsivity (R) of 3959, 5425, 955 A W−1 for the case of 20 nm YbCl3 at the wavelength (λ) of 420, 680 and 980 nm, respectively. A series of photophysical and electrical characterization has been performed and it is found that the remarkably improved photoresponse originates from the combining effects of upconversion and defects passivation from Yb3+. Moreover, the optimal YbCl3 thickness of 20 nm can be ascribed to the balance between upconversion and concentration quenching of Yb3+. The influence of the YbCl3 doping on the CsPbCl3 electronic structure is investigated and downshifting and stabilization of valence band maximum (VBM) can be attributed to the p-type doping and counteracting effect of Yb3+ and Cl−, respectively. [ABSTRACT FROM AUTHOR]

Although outstanding detectivities, InGaAs photodetectors for optic fiber communication are often costly due to the need for cooling. Therefore, cryogen-free and cost-effective alternatives working in telecommunication bands are highly desired. Here, we present a design of hot-electron photodetectors (HE PDs) with attributes of room-temperature operation and strong optical absorption over S and C bands (from 1460 to 1565 nm). The designed HE PD consists of a metal–semiconductor–metal hot-electron stack integrated with a front grating. Optical simulations reveal that mode hybridizations between Fabry–Pérot resonance and grating-induced surface plasmon excitation lead to high absorption efficiencies (≥0.9) covering S and C bands. Probability-based electrical calculations clarify that device responsivity is mainly determined by working wavelength on the premise of broadband strong absorption. Moreover, through comparison studies between the grating-assisted HE PD and purely planar microcavity system that serves as a reference, we highlight the design superiorities in average absorption and average responsivity with optimized values of 0.97 and 0.73 mA W−1, respectively. The upgraded peformances of the designed device are promising for efficient photoelectric conversion in optic fiber communication systems. [ABSTRACT FROM AUTHOR]

W-doped ZnO thin films deposited on Si substrates with (100) orientation by sol–gel spin coating method at temperature 500 °C. W/Zn atomic ratio varies from 0% to 4%. Then, the UV detection performance analysis of p–n heterojunction UV photodetectors based on W-doped ZnO/Si is analyzed. The current–voltage curves of W-doped ZnO/Si are investigated in dark and exhibit diode-like rectifying behavior. Among doped ZnO/Si, sample with atomic ratio of W/Zn = 2% is the best candidate to study photodetector characteristics in UV range. The resulting device exhibits a rectification ratio RR of 5587 at ±5 V, a higher responsivity of 3.84 A W−1 and a photosensitivity value of 34 at 365 nm under 0.5 mW cm−2. The experimental findings reveal that the UV detection performance of the heterojunction-based photodetectors strongly dependent on the properties of metal oxide layer. The main goal of this work is to investigate the effect of W doping on the performance of ZnO/Si based photodetectors. Based on our results, it is observed that 2 at% of W dopant is the optimum amount of doping for high performance photodetector of ZnO:W/Si heterojunction thanks to the suppressed recombination ratio and enhanced carrier separation properties in the depletion zone. [ABSTRACT FROM AUTHOR]

The need for photosensors and gas sensors arises from their pivotal roles in various technological applications, ensuring enhanced efficiency, safety, and functionality in diverse fields. In this paper, interlinked PbS/Sb2O5 thin film has been synthesized by a magnetron sputtering method. We control the temperature to form the nanocomposite by using their different nucleation temperature during the sulfonation process. A nanostructured PbS/Sb2O5 with cross-linked morphology was synthesized by using this fast and efficient method. This method has also been used to grow a uniform thin film of nanocomposite. The photo-sensing and gas-sensing properties related to the PbS/Sb2O5 compared with those of other nanomaterials have also been investigated. The experimental and theoretical calculations reveal that the PbS/Sb2O5 exhibits extraordinarily superior photo-sensing and gas-sensing properties in terms of providing a pathway for electron transport to the electrode. The attractive highly sensitive photo and gas sensing properties of PbS/Sb2O5 make them applicable for many different kinds of applications. The responsivity and detectivity of PbS/Sb2O5 are 0.28 S/mWcm−2 and 1.68 × 1011 Jones respectively. The sensor response towards NO2 gas was found to be 0.98 at 10 ppb with an limit of detection (LOD) of 0.083 ppb. The PbS/Sb2O5 exhibits high selectivity towards the NO2 gas. Density functional theory (DFT) and time-dependent density functional theory (TD-DFT) were used to analyze the geometries, electronic structure, and electronic absorption spectra of a light sensor fabricated by PbS/Sb2O5. The results are very analogous to the experimental results. Both photosensors and gas sensors are indispensable tools that contribute significantly to the evolution of technology and the improvement of various aspects of modern life. [ABSTRACT FROM AUTHOR]

Flexible photodetectors (PDs) have garnered increasing attention for their potential applications in diverse fields, including weather monitoring, smart robotics, smart textiles, electronic eyes, wearable biomedical monitoring devices, and so on. Notably, perovskite nanostructures have emerged as a promising material for flexible PDs due to their distinctive features, such as a large optical absorption coefficient, tunable band gap, extended photoluminescence decay time, high carrier mobility, low defect density, long exciton diffusion lengths, strong self-trapped effect, good mechanical flexibility, and facile synthesis methods. In this review, we first introduce various synthesis methods for perovskite nanostructures and elucidate their corresponding optical and electrical properties, encompassing quantum dots, nanocrystals, nanowires, nanobelts, nanosheets, single-crystal thin films, polycrystalline thin films, and nanostructured arrays. Furthermore, the working mechanism and key performance parameters of optoelectronic devices are summarized. The review also systematically compiles recent advancements in flexible PDs based on various nanostructured perovskites. Finally, we present the current challenges and prospects for the development of perovskite nanostructures-based flexible PDs. [ABSTRACT FROM AUTHOR]

Low-cost, small-sized, and easy integrated high-performance photodetectors for photonics are still the bottleneck of photonic integrated circuits applications and have attracted increasing attention. The tunable narrow bandgap of two-dimensional (2D) layered molybdenum ditelluride (MoTe2) from ∼0.83 to ∼1.1 eV makes it one of the ideal candidates for near-infrared (NIR) photodetectors. Herein, we demonstrate an excellent waveguide-integrated NIR photodetector by transferring mechanically exfoliated 2D MoTe2 onto a silicon nitride (Si3N4) waveguide. The photoconductive photodetector exhibits excellent responsivity (R), detectivity (D *), and external quantum efficiency at 1550 nm and 50 mV, which are 41.9 A W−1, 16.2 × 1010 Jones, and 3360%, respectively. These optoelectronic performances are 10.2 times higher than those of the free-space device, revealing that the photoresponse of photodetectors can be enhanced due to the presence of waveguide. Moreover, the photodetector also exhibits competitive performances over a broad wavelength range from 800 to 1000 nm with a high R of 15.4 A W−1 and a large D * of 59.6 × 109 Jones. Overall, these results provide an alternative and prospective strategy for high-performance on-chip broadband NIR photodetectors. [ABSTRACT FROM AUTHOR]

High-sensitivity and fast-response photodetectors (PDs) are vital part of optical wireless communication (OWC) system. In this work, we develop an organic–inorganic hybrid perovskite material (MAPbI3) based p–i–n structured PD. By optimizing the precursor solution concertation, the PD showed a high responsivity of 0.98 A W−1, a fast response time t rise/ t fall of 12/12.5 μs, a specific detectivity of 2.62 × 1013 Jones, and the f−3dB of 24 kHz under the 532 nm laser and −0.2 V bias voltage. Furthermore, we designed an OWC system based on the prepared PD. With the baud rate of 19200 bps, the system exhibits a bit error rate less than 10−6, and it can realize 9.63 m long-distance communication and quick transmission applications such as strings, texts, photos, and audios. Our work demonstrates the great application potential of perovskite PDs in the field of optical communication. [ABSTRACT FROM AUTHOR]

β -Ga2O3 has been widely investigated for its stability and thermochemical properties. However, the preparation of β -Ga2O3 thin films requires complex growth techniques and high growth temperatures, and this has hindered the application of β -Ga2O3 thin films. In this study, β -Ga2O3 thin films with good crystalline quality were prepared using a green method, and an ultraviolet (UV) detector based on β -Ga2O3 with a photocurrent of 2.54 × 10–6 A and a dark current of 1.19 × 10–8 A has been developed. Two-dimensional materials have become premium materials for applications in optoelectronic devices due to their high conductivity. Here, we use the suitable energy band structure between Nb2C and Ga2O3 to create a high carrier migration barrier, which reduces the dark current of the device by an order of magnitude. In addition, the device exhibits solar-blind detection, high responsiveness (28 A W−1) and good stability. Thus, the Nb2C/ β -Ga2O3 heterojunction is expected to be one of the promising devices in the field of UV photoelectric detection. [ABSTRACT FROM AUTHOR]

Bi2O2Se, a newly emerging two-dimensional (2D) material, has attracted significant attention as a promising candidate for optoelectronics applications due to its exceptional air stability and high mobility. Generally, mica and SrTiO3 substrates with lattice matching are commonly used for the growth of high-quality 2D Bi2O2Se. Although 2D Bi2O2Se grown on these insulating substrates can be transferred onto Si substrate to ensure compatibility with silicon-based semiconductor processes, this inevitably introduces defects and surface states that significantly compromise the performance of optoelectronic devices. Herein we employ Bi2Se3 as the evaporation source and oxygen reaction to directly grow Bi2O2Se nanosheets on Si substrate through a conventional chemical vapor deposition method. The photodetector based on the Bi2O2Se nanosheets on Si substrate demonstrates outstanding optoelectronics performance with a responsivity of 379 A W−1, detectivity of 2.9 × 1010 Jones, and rapid response time of 0.28 ms, respectively, with 532 nm illumination. Moreover, it also exhibits a broadband photodetection capability across the visible to near-infrared range (532–1300 nm). These results suggest that the promising potential of Bi2O2Se nanosheets for high-performance and broadband photodetector applications. [ABSTRACT FROM AUTHOR]

Van der Waals heterostructures provide a new opportunity for constructing new structures and improving the performance of electronic and optoelectronic devices. However, the existing methods of constructing heterojunctions are still faced with problems such as impurity introduction, or complex preparation process and limited scope of application. Herein, a physisorption method is proposed to composite CuO nanorods on the surface of MoS2 nanosheets. CuO nanorods and MoS2 form type-Ⅱ heterojunctions, which promotes the separation and transport of photo-generated charge carriers. More importantly, compared with the transfer and coating methods, the physical adsorption method avoids the introduction of auxiliary materials during the whole process of constructing the heterojunction, and therefore effectively reduces the damage and pollution at the interface. The optimized MoS2/CuO heterojunction photodetector achieves a high photoresponsivity of ∼680.1 A W−1 and a fast response speed of ∼29 μ s. The results demonstrate that the physisorption method provides a feasible approach to realize high performance photodetectors with pollution-free interfaces, and it can also be extended to the development of other low-dimensional hybrid heterojunction electronic and optoelectronic devices. [ABSTRACT FROM AUTHOR]

Bismuth oxyselenide has recently gained tremendous attention as a promising 2D material for next-generation electronic and optoelectronic devices due to its ultrahigh mobility, moderate bandgap, exceptional environmental stability, and presence of high-dielectric constant native oxide. In this study, we have synthesized single-crystalline nanosheets of Bismuth oxyselenide with thicknesses measuring below ten nanometers on Fluorophlogopite mica using an atmospheric pressure chemical vapor deposition system. We transferred as-grown samples to different substrates using a non-corrosive nail polish-assisted dry transfer method. Back-gated Bi2O2Se field effect transistors showed decent field effect mobility of 100 cm2 V−1s−1. The optoelectronic property study revealed an ultrahigh responsivity of 1.16 × 106 A W−1 and a specific detectivity of 2.55 × 1013 Jones. The samples also exhibited broadband photoresponse and gate-tunable photoresponse time. These results suggest that Bi2O2Se is an excellent candidate for future high-performance optoelectronic device applications. [ABSTRACT FROM AUTHOR]

The photogalvanic effects (PGEs) in low-dimensional devices have attracted great interests recently. Herein, based on non-equilibrium Green's function combined with density functional theory, we investigated spin-dependent PGE phenomena in the BiC photodetector with the linearly polarized light and zero bias. Due to the presence of strong spin–orbit interaction (SOI) and C 3 v symmetry for the BiC monolayer, the armchair and zigzag BiC photodetectors can produce robust spin-dependent PGEs which possess the cos(2 θ) and sin(2 θ) relations on the photon energies, respectively. Especially, the pristine armchair and armchair Bi-vacancy BiC photodetectors can produce fully spin polarization, and pure spin current was found in the pristine armchair and zigzag BiC photodetector, respectively. Furthermore, after introducing the Bi-vacancy, C-vacancy, Bi-doping and C-doping respectively, the BiC photodetector can produce higher spin-dependent PGEs for their C s symmetry. Additionally, the behaviors of spin-dependent photoresponse are highly anisotropic which can be tuned by the photon energy. This work suggested great potential applications of the BiC monolayer on PGE-driven photodetectors in low energy-consumption optoelectronics and spintronic devices. [ABSTRACT FROM AUTHOR]

Double perovskite crystals are promising alternatives for lead-based perovskites that has potential to address toxicity and instability issues. In this study, Cs2AgBiCl6 nanocrystals (NCs) with high absorption coefficients were synthesized by hot-injection method. The bandgap engineering was realized by tuning the halide composition in Cs2AgBiCl6 to Cs2AgBiBr6. Both NCs were used as light-absorbing layers in lead-free perovskite photodiodes that exhibit wavelength-selectivity for UV–visible light operatable even at a bias voltage of 0 V. Cs2AgBiBr6-based photodiode exhibits a characteristic detection peak at 340 nm with a responsivity of 3.21 mA W−1, a specific detectivity up to 8.91 × 1010 Jones and a fast response speed with a rise/fall time of 30/35 ms. The excellent performance of self-driven photodiodes lights up the prospect of lead-free perovskite NCs in highly efficient optoelectronic devices. [ABSTRACT FROM AUTHOR]

Self-powered photodetectors that do not require external power support are expected to play a key role in future photodetectors due to their low power characteristics, but achieving high responsivity remains a challenge. 2D van der Waals heterojunctions are a promising technology for high-performance self-powered photodetectors due to their excellent optical and electrical properties. Here, we fabricate a self-powered photodetector based on In2Se3/WSe2/ReS2 van der Waals heterojunction self-powered photodetector. Due to the presence of ReS2 layer, photocurrent is enhanced as a result of the increase in light absorption efficiency and the effective region for generating photogenerated carriers. The built-in electric field is enhanced by a negative 'back-gate voltage' along the p–n junction vertical direction generated by the electrons in the photo-generated electrons accumulation layer. Accordingly, the optical responsivity and the photoresponse speed of this heterojunction self-powered photodetector are greatly boosted. The proposed self-powered photodetector based on the In2Se3/WSe2/ReS2 heterojunction exhibits a high responsivity of 438 mA W−1, which is 17 times higher compared to the In2Se3/WSe2 photodetector, a self-powered current (1.1 nA) that is an order of magnitude higher than that of the In2Se3/WSe2 photodetector, and a fast response time that is 250% faster. Thus the self-powered photodetector with a stronger built-in electric field and a wider depletion zone can provide a new technological support for the fabrication of high responsivity, low power consumption and high speed self-powered photodetectors based on van der Waals heterojunctions. [ABSTRACT FROM AUTHOR]

One-dimensional nanowire structures composed of perovskite are widely recognized for their exceptional optoelectronic performance and mechanical properties, making them a popular area of investigation in photodetection research. In this work, a perovskite nanowire/copper phthalocyanine heterojunction-based photodetector was fabricated, which exhibits high photoresponse in the visible-near-infrared region. The incorporation of a heterojunction significantly enhanced the photoelectric performance. Specifically, the photoresponsivity and external quantum efficiency of the nanowire-based device were elevated from 58.5 A W−1 and 1.35 × 104% to 84.5 A W−1 and 1.97 × 104% at 532 nm, respectively. The enhanced photoresponse of the heterojunction device can be attributed to the unique microstructure of nanowire arrays. The wrapping of the nanowires by copper phthalocyanine forms heterojunctions with a larger dissociation area, which facilitated exciton dissociation and enhanced device performance. This work provides a promising example for optimizing the performance of nanowire devices. [ABSTRACT FROM AUTHOR]

Lead-halide perovskites have come to dominate the emerging photovoltaics research scene over the past decade. But whilst perovskite photovoltaics exhibit exceptional efficiencies, their limited stability, as well as the toxicity of their lead component remain challenges. This focus collection captures a snapshot of the efforts in the community to address these challenges, from modifications to the synthesis and device structure of perovskite photovoltaics to improve their stability, through to efforts to understand, develop, and improve lead-free perovskite-inspired materials (PIMs). PIMs range from direct perovskite-derivatives (e.g. CsSnI3 or halide elpasolites) through to electronic analogs (e.g. BiOI). The collection discusses the application of these materials not only for solar cells, but also more broadly for photodetection, light emission, and anti-counterfeiting devices. This collection emphasizes the diversity of strategies and directions in this field, as well as its highly interdisciplinary nature. [ABSTRACT FROM AUTHOR]

Narrow-band photodetectors based on halide perovskite have recently attracted significant attention due to their exceptional narrow-band detection performance and tunable absorption peaks covering a wide optical range. In this work, we report mixed-halide CH3NH3PbCl x Br3– x single crystal-based photodetectors have been fabricated, where the Cl/Br ratios were varied (3:0, 10:1, 5:1, 1:1, 1:7, 1:14 and 0:3). Vertical and parallel structures devices were fabricated which exhibited ultranarrow spectral responses under bottom illumination, with a full-width at half-maximum less than 16 nm. The observed performance can be ascribed to the unique carrier generation and extraction mechanisms within the single crystal under short and long wavelength of illumination. These findings offer valuable insights into the development of narrow-band photodetectors that do not necessitate the use of filters and hold tremendous potential for a diverse array of applications. [ABSTRACT FROM AUTHOR]

Molybdenum disulfide (MoS2) is an emerging class of new materials with a wide range of potential practical applications. However, the uncontrollability of monolayer MoS2 synthesized by traditional chemical vapor deposition method and the low responsivity of MoS2 photodetectors limit its further development in the field of photoelectric detection. To achieve controlled growth of monolayer MoS2 and construct MoS2 photodetectors with a high responsivity, we propose a novel single crystal growth strategy of high-quality MoS2 by controlling the Mo to S vapor ratio near the substrate, and deposit a layer of hafnium oxide (HfO2) on the surface of MoS2 to enhance the performance of the pristine metal-semiconductor-metal structure photodetector. At a reverse bias of 8 V, the HfO2 passivated MoS2 photodetector features an extremely high responsivity of 1201 AW − 1 , a response time of around 0.5 s, and a detectivity of 7.7 × 10 11 Jones. Meanwhile, we deeply investigate the effect of the HfO2 layer on the performance of the fabricated MoS2 photodetector and propose a physical mechanism to interpret the obtained experiment results. These results might facilitate a better understanding on the performance modulation of the MoS2 photodetectors and accelerate the development of MoS2-based optoelectronic devices. [ABSTRACT FROM AUTHOR]

Self-powered broadband photodetectors have attracted great interest due to their applications in biomedical imaging, integrated circuits, wireless communication systems, and optical switches. Recently, significant research is being carried out to develop high-performance self-powered photodetectors based on thin 2D materials and their heterostructures due to their unique optoelectronic properties. Herein, a vertical heterostructure based on p-type 2D WSe2 and n-type thin film ZnO is realized for photodetectors with a broadband response in the wavelength range of 300–850 nm. Due to the formation of a built-in electric field at the WSe2/ZnO interface and the photovoltaic effect, this structure exhibits a rectifying behavior with a maximum photoresponsivity and detectivity of ∼131 mA W−1 and ∼3.92 × 1010 Jones, respectively, under an incident light wavelength of λ = 300 nm at zero voltage bias. It also shows a 3-dB cut-off frequency of ∼300 Hz along with a fast response time of ∼496 μ s, making it suitable for high-speed self-powered optoelectronic applications. Furthermore, the facilitation of charge collection under reverse voltage bias results in a photoresponsivity as high as ∼7160 mA W−1 and a large detectivity of ∼1.18 × 1011 Jones at a bias voltage of −5 V. Hence, the p-WSe2/n-ZnO heterojunction is proposed as an excellent candidate for high-performance, self-powered, and broadband photodetectors. [ABSTRACT FROM AUTHOR]

As an ultra-wide bandgap semiconductor, hexagonal boron nitride (h-BN) has drawn great attention in solar-blind photodetection owing to its wide bandgap and high thermal conductivity. In this work, a metal-semiconductor-metal structural two-dimensional h-BN photodetector was fabricated by using mechanically exfoliated h-BN flakes. The device achieved an ultra-low dark current (16.4 fA), high rejection ratio (R 205nm/ R 280nm = 235) and high detectivity up to 1.28 × 1011 Jones at room temperature. Moreover, due to the wide bandgap and high thermal conductivity, the h-BN photodetector showed good thermal stability up to 300 °C, which is hard to realize for common semiconductor materials. The high detectivity and thermal stability of h-BN photodetector in this work showed the potential applications of h-BN photodetectors working in solar-blind region at high temperature. [ABSTRACT FROM AUTHOR]

Various spectral bands provide different types of information, and information enhancement could be achieved by selective fusion of different spectral bands. The fused solar-blind Ultraviolet (UV)/Visible (VIS) bi-spectral sensing and imaging can provide the precise location of UV targets in virtue of VIS background, which has been increasingly promoted. However, most reported UV/VIS bi-spectral photodetectors (PDs) only have one single channel towards a broadband spectrum of both UV and VIS light, which cannot distinguish two kinds of signals, hindering the image fusion of bi-spectral signals. This work demonstrates the solar-blind UV/VIS bi-spectral PD based on vertically stacking perovskite of MAPbI3 and ternary oxide of ZnGa2O4 with independent and distinct response toward solar-blind UV and VIS light in a single pixel. The PD exhibits excellent sensing properties with an I on/ I off ratio of >107 and 102, detectivity of >1010 and 108 Jones, and response decay time of 90 μ s and 16 ms for VIS and UV channels, respectively. The successful fusion of VIS and UV images suggests that our bi-spectral PD can be applied in the accurate identification of corona discharge and fire detection. [ABSTRACT FROM AUTHOR]

Low-dimensional tin selenide nanoribbons (SnSe NRs) show a wide range of applications in optoelectronics fields such as optical switches, photodetectors, and photovoltaic devices due to the suitable band gap, strong light–matter interaction, and high carrier mobility. However, it is still challenging to grow high-quality SnSe NRs for high-performance photodetectors so far. In this work, we successfully synthesized high-quality p-type SnSe NRs by chemical vapor deposition and then fabricated near-infrared photodetectors. The SnSe NR photodetectors show a high responsivity of 376.71 A W−1, external quantum efficiency of 5.65 × 104%, and detectivity of 8.66 × 1011 Jones. In addition, the devices show a fast response time with rise and fall time of up to 43 μ s and 57 μ s, respectively. Furthermore, the spatially resolved scanning photocurrent mapping shows very strong photocurrent at the metal-semiconductor contact regions, as well as fast generation-recombination photocurrent signals. This work demonstrated that p-type SnSe NRs are promising material candidates for broad-spectrum and fast-response optoelectronic devices. [ABSTRACT FROM AUTHOR]

Perovskite materials with excellent optical and electronic properties have huge potential in the research field of photodetectors. Constructing heterojunctions and promoting carrier transportation are significant for the development of perovskite-based optoelectronics devices with high performances. Herein, we demonstrated a CsPbBr3/SnO2 heterojunction photodetector and improved the device performances through post-annealing treatment of SnO2 film. The results indicated that the electrical properties of SnO2 films will make an important impact on carrier extraction, especially for type-II heterojunction. As the electrons transfer layer in CsPbBr3/SnO2 type-II heterojunction, defects related to oxygen vacancy should be the key factor to affect carrier concentration, induce carriers' limitation and recombination rate. Under proper annealing temperature for SnO2 layer, the recombination rate can decrease to 1.37 × 1021 cm3 s and the spectral responsivity will be highly increased. This work can enhance the understanding on the photoresponse of perovskite photodetectors, and will be helpful for the further optimization and design of optoelectronic devices based on the perovskite heterojunction. [ABSTRACT FROM AUTHOR]

In this paper, high-performance CuSCN/Si heterojunction near-infrared photodetectors were successfully prepared using nanoscale light-trapping optical structures. Various light-trapping structures of ortho-pyramids, inverted pyramids and silicon nanowires were prepared on silicon substrates. Then, CuSCN films were spin-coated on silicon substrates with high crystalline properties for the assembly of CuSCN/Si photodetectors. Their reflectance spectra and interfacial passivation properties were characterized, demonstrating their superiority of light-trapping structures in high light response. Under the irradiation of 980 nm near-infrared light, a maximum responsivity of 2.88 A W−1 at −4 V bias and a specific detectivity of 5.427 × 1010 Jones were obtained in the CuSCN/Si heterojunction photodetectors prepared on planner silicon due to 3.6 eV band gap of CuSCN. The substrates of the light-trapping structure were then applied to the CuSCN/Si heterojunction photodetectors. A maximum responsivity of 10.16 A W−1 and a maximum specific detectivity of 1.001 × 1011 Jones were achieved under the 980 nm near-infrared light irradiation and −4 V bias, demonstrating the advanced performance of CuSCN/Si heterojunction photodetectors with micro-nano light-trapping substrates in the field of near-infrared photodetection compared to other silicon-based photodetectors. [ABSTRACT FROM AUTHOR]

Tin–lead perovskite-based photodetectors have a wide light-absorption wavelength range, which spans 1000 nm. However, the preparation of the mixed tin–lead perovskite films faces two great obstacles, namely easy oxidation of Sn2+ to Sn4+ and fast crystallization from tin–lead perovskite precursor solutions, thus further resulting in poor morphology and high density of defects in tin–lead perovskite films. In this study, we demonstrated a high-performance of near-infrared photodetectors prepared from a stable low-bandgap (MAPbI3)0.5(FASnI3)0.5 film modified with 2-fluorophenethylammonium iodide (2-F-PEAI). The addition engineering can efficiently improve the crystallization of (MAPbI3)0.5(FASnI3)0.5 films through the coordination binding between Pb2+ and N atom in 2-F-PEAI, and resulting in a uniform and dense (MAPbI3)0.5(FASnI3)0.5 film. Moreover, 2-F-PEAI suppressed Sn2+ oxidation and effectively passivated defects in the (MAPbI3)0.5(FASnI3)0.5 film, thereby significantly reducing the dark current in the PDs. Consequently, the near-infrared photodetectors showed a high responsivity with a specific detectivity of over 1012 Jones at 800 to near-1000 nm. Additionally, the stability of PDs incorporated with 2-F-PEAI has been significantly improved under air conditions, and the device with the 2-F-PEAI ratio of 400:1 retained 80% of its initial efficiency after 450 h storage in air without encapsulation. Finally, 5 × 5 cm2 photodetector arrays were fabricated to demonstrate the potential utility of the Sn–Pb perovskite photodetector in optical imaging and optoelectronic applications. [ABSTRACT FROM AUTHOR]

Multilayer borophene was predicted to have a similar semiconductor property to its monolayer arise from the weak van der Waals interactions between the layers. Besides, multilayer borophene has a higher carrier mobility than monolayer ones, so it is placed great hopes in applications of photoelectric and photovoltaic devices. However, its preparation and application in experiments of multilayer borophene are still lacking. Here, multilayer α ′-4H-borophene was synthesized on semiconducting n -type GaAs substrates using NaBH4 source as precursor and hydrogen as the carrier gas under controlled temperature and pressure conditions. The experimental results of the borophene are in good agreement with those of its theoretical prediction. The borophene is a semiconductor with a bandgap of 2.48 eV. To demonstrate the device application potential of the borophene, a near-infrared photodetector composed of p -type borophene and n -type GaAs was fabricated. The photodetector shows a high photoresponsivity of 0.31 mA·W−1, a high specific detectivity of 108 Jones, and a fast response or recovery speed of 117 or 109 ms under the irradiation with the wavelength of 940 nm at zero bias. The results prove that the α ′-4H-borophene/GaAs photodetector can show high sensitivity and zero consumption, which is of great value in meeting the appeal of sustainable development of society. [ABSTRACT FROM AUTHOR]

Perovskites have showed significant potential for the application in photodetectors due to their outstanding electrical and optical properties. Integrating two-dimensional (2D) materials with perovskites can make full use of the high carrier mobility of 2D materials and strong light absorption of perovskite to realize excellent optoelectrical properties. Here, we demonstrate a photodetector based on the WTe2/CsPbI3 heterostructure. The quenching and the shortened lifetime of photoluminescence (PL) for CsPbI3 perovskite confirms the efficient charge transfer at the WTe2/CsPbI3 heterojunction. After coupled with WTe2, the photoresponsivity of the CsPbI3 photodetector is improved by almost two orders of magnitude due to the high-gain photogating effect. The WTe2/CsPbI3 heterojunction photodetector reveals a large responsivity of 1157 A W−1 and a high detectivity of 2.1 × 1013 Jones. The results pave the way for the development of high-performance optoelectronic devices based on 2D materials/perovskite heterojunctions. [ABSTRACT FROM AUTHOR]

Although black phosphorus analogue, bismuthene, has been extensively investigated in recent years, yet the investigation into the photoelectronic devices is still in its infancy. In this contribution, uniform zero-dimensional (0D) bismuth (Bi) quantum dots (QDs) with different sizes were successfully synthesized by a simple solvothermal method. The as-synthesized 0D Bi QDs serve as working electrode materials by a direct deposition for photoelectrochemical (PEC)-type photodetection. The PEC results demonstrate that the as-fabricated 0D Bi QD-based electrode not only possess suitable self-powered broadband photoresponse, but also displays excellent photodetection performance. Under simulated light, the photocurrent density and photoresponsivity of the as-fabricated 0D Bi QD-based electrode can reach 2690 nA cmâˆ'2, and 22.0 ÎĽ A Wâˆ'1, respectively. In addition, the as-prepared Bi QDs with the average diameter of 17 nm exhibit the best PEC photoresponse behavior in the studied size range of Bi QDs, mainly ascribed to the synergistic effect of suitable band gap and accessible active sites. It is anticipated that the uniform Bi QDs can be served as building blocks for a variety of photoelectronic devices, further expanding the application prospects of bismuthene, and can provide in-depth acknowledge on the performance optimization of monoelement Bi-based optical devices. [ABSTRACT FROM AUTHOR]

Hydrogenated graphene is easy to prepare and chemically stable. Besides, hydrogenation of graphene can open the band gap, which is vital for electronic and optoelectronic applications. Graphene/Si photodetector (PD) has been widely studied in imaging, telecommunications, and other fields. The direct contact between graphene and Si can form a Schottky junction. However, it suffers from poor interface state, where the carrier recombination at the interface causes serious leakage current, which in turn leads to a decrease in the detectivity. Hence, in this study, hydrogenated graphene is used as an interfacial layer, which passivates the interface of graphene/Si (Gr/Si) heterostructure. Besides, the single atomic layer thickness of hydrogenated graphene is also crucial for the tunneling transport of charge carriers and its suitable energy band position reduces the recombination of carrier. The fabricated graphene/hydrogenated-graphene/Si (Gr/Hâ€"Gr/Si) heterostructure PD showed an extremely low dark current about 10âˆ'7 A. As a result, it had low noise current and exhibited a high specific detectivity of ∼2.3 × 1011 Jones at 0 V bias with 532 nm laser illumination. Moreover, the responsivity of the fabricated PD was found to be 0.245 A Wâˆ'1 at 532 nm illumination with 10 ÎĽ W power. These promising results show a great potential of hydrogenated graphene to be used as an interface passivation and carrier tunneling layer for the fabrication of high-performance Gr/Si heterostructure PDs. [ABSTRACT FROM AUTHOR]

Lead telluride nanowires deposited by electrochemical atomic layers have broad application prospects in the field of photodetectors. In this work, using the method of electrochemical atomic layer deposition, we obtained different morphologies of lead telluride materials by controlling the deposition parameters, such as deposition time, temperature, and potential, and characterized them using SEM, TEM, XPS, and other techniques. A lead telluride nanowire detector with good performance was prepared. The photoresponsivity of the detector is 102 mA Wâˆ'1, the detectivity is 2.1 × 108 Jones, and the response time and recovery time are 0.52 s and 0.54 s respectively at 2.7 ÎĽ m wavelength laser irradiation. [ABSTRACT FROM AUTHOR]

We report on a sensor architecture for detection of hazardous gases. The proposed device is based on the integration of a solid-state quantum dot (QD) photoluminescent probe with a QD photodetector on the same substrate. The effectiveness of the approach is demonstrated by developing a compact optical sensor for trace detection of explosives in air. The proposed architecture is very simple and consists of a silicon substrate with both surfaces coated with QD films. The upper layer acts as photoluminescent probe, pumped by a blue LED. The change of photoluminescence intensity associated to the interaction between the QDs and the target analyte is measured by the QD photodetector fabricated on the opposite side of the substrate. The sensor is mounted into a small chamber provided with the LED and the front-end electronics. The device is characterized by using nitrobenzene as representative nitroaromatic compound. Extremely low concentrations (down to 0.1 ppm) can be detected by the proposed device, with a theoretical detection limit estimated to be as low as 2 ppb. Results are repeatable and no ageing effect is observed over a 70 d period. The proposed architecture may provide a promising solution for explosive detection in air as well as other sensing applications, thanks to its sensitivity, simple fabrication process, practical usability and cost effectiveness. [ABSTRACT FROM AUTHOR]

Self-sufficient power sources provide a promising application of abundant electronic devices utilized in detection of ambient properties. Recently, triboelectric nanogenerators (TENGs) have been widely investigated to broaden the self-powered systems by converting the ambient mechanical agitations into electrical voltage and current. Graphene oxide (GO), not only for sensing applications but also as a brilliant energy-related nanomaterial, provides a wide range of controllable bandgap energies, as well as facile synthesis route. In this study, GO-based self-powered photodetectors have been fabricated by conflating the photosensitivity and triboelectric characteristics of freestanding GO paper. In this regard, photodetection via TENGs has been investigated in two forms of active and passive circuits for ultraviolet (UV) and visible illumination. The photodetector responsivity upon UV enhanced from 0.011 mA Wâˆ'1 for conventional GO-photoresistors up to 13.41 mA Wâˆ'1 by active photodetection setup. Moreover, applying the active-TENG improved the efficiency from 0.25% (in passive TENG) to 4.21%. Our findings demonstrate that active TENGs might enable materials with insignificant optical response to represent considerably higher light-sensitivity by means of synergizing the effect of TENG output changes with opto-electronical properties of desired layers. [ABSTRACT FROM AUTHOR]

Combining novel two-dimensional materials with traditional semiconductors to form heterostructures for photoelectric detection have attracted great attention due to their excellent photoelectric properties. In this study, we reported the formation of a heterostructure comprising of tin telluride (SnTe) and germanium (Ge) by a simple and efficient one-step magnetron sputtering technique. A photodetector was fabricated by sputtering a nanofilm of SnTe on to a pre-masked n-Ge substrate. J â€" V measurements obtained from the SnTe/n-Ge photodetector demonstrated diode and photovoltaic characteristics in the visible to near-infrared (NIR) band (i.e. 400â€"2050 nm). Under NIR illumination at 850 nm with an optical power density of 13.81 mW cmâˆ'2, the SnTe/n-Ge photodetector exhibited a small open-circuit voltage of 0.05 V. It also attained a high responsivity (R) and detectivity (D *) of 617.34 mA Wâˆ'1 (at bias voltage of âˆ'0.5 V) and 2.33 × 1011 cmHz1/2Wâˆ'1 (at zero bias), respectively. Therefore, SnTe nanofilm/n-Ge heterostructure is highly suitable for used as low-power broadband photodetector due to its excellent performances and simple device configuration. [ABSTRACT FROM AUTHOR]

A heterostructure composed of a combination of semi-metallic graphene (Gr) and high-absorption LaVO3 is ideal for high-performance translucent photodetector (PD) applications. Here, we present multilayer Gr/LaVO3 vertical-heterostructure semitransparent PDs with various layer numbers (L n ). At L n = 2, the PD shows the best performance with a responsivity (R) of 0.094 A Wâˆ'1 and a specific detectivity (D *) of 7.385 × 107 cm Hz1/2 Wâˆ'1 at 532 nm. Additionally, the average visible transmittance of the PD is 63%, i.e. it is semitransparent. We increased photocurrent (PC) by approximately 13%, from 0.564 to 0.635 ÎĽ A cmâˆ'2 by using an Al reflector on the semitransparent PD. The PC of an unencapsulated PD maintains about 86% (from 0.571 to 0.493 ÎĽ A cmâˆ'2) of its initial PC value after 2000 h at 25 °C temperature/30% relative humidity, showing good stability. This behavior is superior to that of previously reported graphene-based PDs. These results show that these PDs have great potential for semitransparent optoelectronic applications. [ABSTRACT FROM AUTHOR]

CsPbCl3 perovskite is an attractive semiconductor material with characteristics such as a wide bandgap, high chemical stability, and excellent optoelectronic properties, which broaden its application prospects for ultraviolet (UV) and violet photodetectors (PDs). However, large-area CsPbCl3 films with high coverage, large grains, and controllable thickness are still difficult to prepare by using the solution method due to the extremely low solubility of their precursors in conventional solvents. Herein, a water-assisted confined re-growth method is developed, and a CsPbCl3 microcrystalline film with an area of 3 cm × 3 cm is grown, the thickness of which is controllable within a range of several microns. The as-prepared thin film exhibits a flat and smooth surface, large grains, and enhanced photoluminescence. Furthermore, the fabricated violet PDs based on the prepared CsPbCl3 film show a high responsivity of 2.17 A Wâˆ'1, external quantum efficiency of 664%, on/off ratio of 2.58 × 103, and good stability. This study provides a prospective solution for the growth of large-area, large-grain, and surface-smooth CsPbCl3 films for high-performance UV and violet PDs. [ABSTRACT FROM AUTHOR]

Integration of nanolayered metal chalcogenides with wide-bandgap semiconductors forming pn heterojunction leads to the way of high-performance photodetection. This work demonstrates the fabrication of a few nanometer thick Molybdenum diselenide (MoSe2)/Mg-doped Gallium Nitride (p-GaN) heterostructure for light detection purposes. The device exhibits low noise broadband spectral response from ultraviolet to near-infrared range (300â€"950 nm). The band-alignment and the charge transfer at the MoSe2/p-GaN interface promote self-powered photodetection with high photocurrent to dark current ratio of 2000 and 1000 at 365 nm and 640 nm, respectively. A high responsivity of 130 A Wâˆ'1, detectivity of 4.8 × 1010 Jones, and low noise equivalent power of 18 fW/Hz1/2 at 365 nm is achieved at an applied bias of 1 V. Moreover, the transient measurements reveal a fast rise/fall time of 407/710 ÎĽ sec for the fabricated device. These outcomes exemplify the viability of MoSe2/p-GaN heterostructure for high-speed and low-noise broadband photodetector applications. [ABSTRACT FROM AUTHOR]

2D MoS2 holds immense potential for electronic and optoelectronic applications due to its unique characteristics. However, the atomic-scale thickness of MoS2 hinders the optical absorbance, thereby limiting its photodetection capability. Vertically-aligned MoS2 (VA-MoS2) has an advantage of strong optical absorption and quick intra-layer transport, offering high speed operation. The coupling of plasmonic metal nanostructure with MoS2 can further enhance the lightâ€"matter interaction. Pt/Pd (as opposed to Ag/Au) are more promising to design next-generation nano-plasmonic devices due to their intense interband activity over a broad spectral range. Herein, we report Pt nanoparticle (NPs) enhanced broadband photoresponse in VA-MoS2. The optical absorbance of MoS2 is enhanced after the integration of Pt NPs, with a four-fold enhancement in photocurrent. The formation of Schottky junction at Pt-MoS2 interface inhibits electron transmission, suppressing the dark current and substantially reducing NEP. The plasmonic-enabled photodetector shows enhanced responsivity (432 A Wâˆ'1, 800 nm) and detectivity (1.85 × 1014 Jones, 5 V) with a low response time (87 ms/84 ms), attributed to faster carrier transport. Additionally, a theoretical approach is adopted to calculate wavelength-dependent responsivity, which matches well with experimental results. These findings offer a facile approach to modulate the performance of next-generation optoelectronic devices for practical applications. [ABSTRACT FROM AUTHOR]

Due to the wide spectral absorption and ultrafast electron dynamical response under optical excitation, topological insulator (TI) was proposed to have appealing application in next-generation photonic and optoelectronic devices. Whereas, the bandgap-free speciality of Dirac surface states usually leads to a quick relaxation of photoexcited carriers, making the transient excitons difficult to manipulate in isolated TIs. Growth of TI Bi2Te3/Ge heterostructures can promote the specific lifetime and quantity of long-lived excitons, offering the possibility of designing original near-infrared optoelectronic devices, however, the construction of TI Bi2Te3/Ge heterostructures has yet to be investigated. Herein, the high-quality Bi2Te3/Ge heterojunction with clear interface was prepared by physical vapor deposition strategy. A significant photoluminescence quenching behaviour was observed by experiments, which was attributed to the spontaneous excitation transfer of electrons at heterointerface via theoretical analysis. Then, a self-powered heterostructure photodetector was fabricated, which demonstrated a maximal detectivity of 1.3 × 1011 Jones, an optical responsivity of 0.97 A Wâˆ'1, and ultrafast photoresponse speed (12.1 ÎĽ s) under 1064 nm light illumination. This study offers a fundamental understanding of the spontaneous interfacial exciton transfer of TI-based heterostructures, and the as-fabricated photodetectors with excellent performance provided an important step to meet the increasing demand for novel optoelectronic applications in the future. [ABSTRACT FROM AUTHOR]

Strain engineering is an effective means of modulating the optical and electrical properties of two-dimensional materials. The flexoelectric effect caused by inhomogeneous strain exists in most dielectric materials, which breaks the limit of the materials’ non-centrosymmetric structure for piezoelectric effect. However, there is a lack of understanding of the impact on optoelectronic behaviour of monolayer MoS2 photodetector via local flexoelectric effect triggered by biaxial strain. In this paper, we develop a probe tip (Pt)-MoS2-Au asymmetric Schottky barrier photodetector based on conductive atomic force microscopy to investigate the impact of flexoelectric effect on the photoresponse performance. Consequently, when the probe force increases from 24 nN to 720 nN, the photocurrent, responsivity and detectivity increase 28.5 times, 29.6 times and 5.3 times at forward bias under 365 nm light illumination, respectively. These results indicate that local flexoelectric effect plays a critical role to improve the photoresponse performance of photodetector. Our approach suggests a new route to improve the performance of photodetectors by introducing local flexoelectric polarization field, offering the potential for the application of strain modulated photoelectric devices. [ABSTRACT FROM AUTHOR]

The use of conventional fabrication methods rapidly developed the performance and notable enhancements of optoelectronic devices. However, it proved challenging to develop and demonstrate stable optoelectronic devices with biodegradability and biocompatibility properties towards sustainable development and extensive applications. This study incorporates a water-soluble Cr-phycoerythrin (Cr-PE) biomaterial to observe its optical and electronic properties effects on the pristine indium gallium zinc oxide (IGZO)-based photodetector. The fabricated photodetector demonstrates an extended absorption detection region, enhanced optoelectronic performance, and switchable function properties. The resulting photocurrent and responsivity of the IGZO/Cr-PE structure have increased by 5.7 and 7.1 times as compared to the pristine IGZO photodetector. It was also observed that the photodetector could operate in UV and UVâ€"visible with enhanced optical properties by effectively adding the water-soluble Cr-PE. Also, the sensing region of IGZO photodetector becomes changeable. It exhibits switchable dual detection by alternatively dripping and removing the Cr-PE on the IGZO layer. Different measurement parameters such as detectivity, repeatability, and sensitivity are highlighted to effectively prove the advantage of including Cr-PE on the photodetector structure. This study contributes to understanding the potential functions in improving optoelectronic devices through an environmental-friendly method. [ABSTRACT FROM AUTHOR]

Conventional heterojunction photodetectors rely on planar junction architecture which suffer from low interfacial contact area, inferior light absorption characteristics and complex fabrication schemes. Heterojunctions based on mixed dimensional nanostructures such as 0D-1D, 1D-2D, 1D-3D etc have recently garnered exceptional research interest owing to their atomically sharp interfaces, tunable junction properties such as enhanced light absorption cross-section. In this work, a flexible broadband UVâ€"vis photodetector employing mixed dimensional heterostructure of 1D NiO nanofibers and 3D Fe2O3 nanoparticles is fabricated. NiO nanofibers were synthesized via economical and scalable electro-spinning technique and made composite with Fe2O3 nanoclusters for hetero-structure fabrication. The optical absorption spectra of NiO nanofibers and Fe2O3 nanoparticles exhibit peak absorption in UV and visible spectra, respectively. The as-fabricated photodetector displays quick response times of 0.09 s and 0.18 s and responsivities of 5.7 mA Wâˆ'1 (0.03 mW cmâˆ'2) and 5.2 mA Wâˆ'1 (0.01 mW cmâˆ'2) for UV and visible spectra, respectively. The fabricated NiOâ€"Fe2O3 device also exhibits excellent detectivity in the order of 1012 jones. The superior performance of the device is ascribed to the type-II heterojunction between NiOâ€"Fe2O3 nanostructures, which results in the localized built-in potential at their interface, that aids in the effective carrier separation and transportation. Further, the flexible photodetector displays excellent robustness when bent over ∼1000 cycles thereby proving its potential towards developing reliable, diverse functional opto-electronic devices. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) materials including black phosphorus (BP) have been extensively investigated because of their exotic physical properties and potential applications in nanoelectronics and optoelectronics. Fabricating BP based devices is challenging because BP is extremely sensitive to the external environment, especially to the chemical contamination during the lithography process. The direct evaporation through shadow mask technique is a clean method for lithography-free electrode patterning of 2D materials. Herein, we employ the lithography-free evaporation method for the construction of BP based field-effect transistors and photodetectors and systematically compare their performances with those of BP counterparts fabricated by conventional lithography and transfer electrode methods. The results show that BP devices fabricated by direct evaporation method possess higher mobility, faster response time, and smaller hysteresis than those prepared by the latter two methods. This can be attributed to the clean interface between BP and evaporated-electrodes as well as the lower Schottky barrier height of 20.2 meV, which is given by the temperature-dependent electrical results. Furthermore, the BP photodetectors exhibit a broad-spectrum response and polarization sensitivity. Our work elucidates a universal, low-cost and high-efficiency method to fabricate BP devices for optoelectronic applications. [ABSTRACT FROM AUTHOR]

Two-dimensional materials have become the focus of attention of researchers in recent years. The demand for two-dimensional materials is increasing day by day, especially with the inadequacy of graphene in optical applications. In this context, the optical and electrical characteristics of the PVP:GaSe thin film nanocomposites were investigated. The surface morphologies of the samples were characterized by SEM, the thin film thicknesses and refractive index parameters were measured by the Ellipsometer method, the structural characteristics were obtained by XRD, and Raman and PL spectroscopy was used to determine the optical characteristics. Critical parameters of Au/PVP:GaSe/n-Si photodetector were calculated under various illumination intensities. It is observed that photodetector with PVP:%5GaSe thin film has the best performance results. According to the experimental results, its responsivity, external quantum efficiency, and detectivity values are 0.485 A Wâˆ'1, %86, and 1.14 × 107 cm Hz1/2 Wâˆ'1 respectively. [ABSTRACT FROM AUTHOR]

The appealing properties of tunable direct wide bandgap, high-temperature robustness and chemical hardness, make Al x Ga1âˆ' x N a promising candidate for fabricating robust solar-blind photodetectors (PDs). In this work, we have utilized the optical phenomenon of localized surface plasmon resonance (LSPR) in metal nanoparticles (NPs) to significantly enhance the performance of solar-blind Al0.4Ga0.6N metalâ€"semiconductorâ€"metal PDs that exhibit high-temperature robustness. We demonstrate that the presence of palladium (Pd) NPs leads to a remarkable enhancement by nearly 600, 300, and 462%, respectively, in the photo-to-dark current ratio (PDCR), responsivity, and specific detectivity of the Al0.4Ga0.6N PD at the wavelength of 280 nm. Using the optical power density of only 32 ÎĽ W cmâˆ'2 at âˆ'10 V, maximum values of ∼3 × 103, 2.7 AWâˆ'1, and 2.4 × 1013 Jones are found for the PDCR, responsivity and specific detectivity, respectively. The experimental observations are supported by finite difference time domain simulations, which clearly indicate the presence of LSPR in Pd NPs decorated on the surface of Al0.4Ga0.6N. The mechanism behind the enhancement is investigated in detail, and is ascribed to the LSPR induced effects, namely, improved optical absorption, enhanced local electric field and LSPR sensitization effect. Moreover, the PD exhibits a stable operation up to 400 K, thereby exhibiting the high-temperature robustness desirable for commercial applications. [ABSTRACT FROM AUTHOR]