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The possibility of using substrates based on 'strained silicon on insulator' structures with a thin (25 nm) buried oxide layer for the growth of light-emitting SiGe structures is studied. It is shown that, in contrast to 'strained silicon on insulator' substrates with a thick (hundreds of nanometers) oxide layer, the temperature stability of substrates with a thin oxide is much lower. Methods for the chemical and thermal cleaning of the surface of such substrates, which make it possible to both retain the elastic stresses in the thin Si layer on the oxide and provide cleaning of the surface from contaminating impurities, are perfecte. It is demonstrated that it is possible to use the method of molecular-beam epitaxy to grow light-emitting SiGe structures of high crystalline quality on such substrates. [ABSTRACT FROM AUTHOR]

Anisotropy, asymmetry, and other anomalies of electrical and thermal properties are revealed in CuInSe crystals. It is shown that the nature of these anomalies is associated with the natural coexistence of order and disorder in these ordered-defect compounds. [ABSTRACT FROM AUTHOR]

Multigraphene films grown by sublimation on the surface of a semi-insulating 6 H-SiC substrate have been studied. It is shown that pregrowth annealing of the substrate in a quasiclosed growth cell improves the structural quality of a multigraphene film. Ohmic contacts to the film have been fabricated, and the Hall effect has been studied at low temperatures. It is found that a 2D electron gas exists in the films. It is concluded that the conductivity of the film is determined by defects existing within the graphene layer or at the interface between the graphene film and a SiC substrate. [ABSTRACT FROM AUTHOR]

Results of studies of electrical properties of structures including metal-conducting oxide (ITO), and β-ZnP2 semiconductor of n-type conductivity are reported. It is established that the total resistance of the structures under study is determined by deep levels of intrinsic defects in the band gap of semiconductor. Long-term relaxation of capacitance and conductivity is observed after switching off the reverse bias at low temperatures, which is associated with restoration of the nonequilibrium charge in the space-charge region. Models of processes in which experimental results are interpreted satisfactorily are constructed. [ABSTRACT FROM AUTHOR]

Results of studies of electrical properties of structures including metal-conducting oxide (ITO), and β-ZnP2 semiconductor of n-type conductivity are reported. It is established that the total resistance of the structures under study is determined by deep levels of intrinsic defects in the band gap of semiconductor. Long-term relaxation of capacitance and conductivity is observed after switching off the reverse bias at low temperatures, which is associated with restoration of the nonequilibrium charge in the space-charge region. Models of processes in which experimental results are interpreted satisfactorily are constructed. [ABSTRACT FROM AUTHOR]