1. Insight into carrier lifetime impact on band-modulation devices
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Sorin Cristoloveanu, Sebastien Martinie, Maryline Bawedin, Hyung Jin Park, Hassan El Dirani, Yuan Taur, Jean-Charles Barbe, Kyung Hwa Lee, Joris Lacord, Yue Xu, Mukta Singh Parihar, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Nanjing University of Posts and Telecommunications [Nanjing] (NJUPT), University of California [San Diego] (UC San Diego), University of California, European Project: 687931,H2020,H2020-ICT-2015,REMINDER(2016), and University of California (UC)
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Materials science ,Carrier lifetime ,Silicon on insulator ,Z2-FET ,02 engineering and technology ,01 natural sciences ,Generation-recombination ,Diffusion ,0103 physical sciences ,Materials Chemistry ,Electrical and Electronic Engineering ,Diffusion (business) ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,010302 applied physics ,SOI ,business.industry ,Hysteresis ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,Modulation ,Band modulation ,Optoelectronics ,0210 nano-technology ,business - Abstract
International audience; A systematic study to model and characterize the band-modulation Z2-FET device is developed bringing light to the relevance of the carrier lifetime influence. This work provides guidelines to optimize the Z2-FETs for sharp switching, ESD protection, and 1T-DRAM applications. Lower carrier lifetime in the Z2-FET helps in attaining the sharp switch. We provide new insights into the correlation between generation/recombination, diffusion, electrostatic barriers and carrier lifetime.
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