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1. Progressive multi-layer drop-casting of CdSe nanoparticles for photocurrent down shifing monitoring

Author

D. Stievenard, Dominique Deresmes, Bruno Grandidier, Tao Xu, D. Zhou, O. Cristini, Y. Lambert, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire de Physique des Lasers, Atomes et Molécules - UMR 8523 (PhLAM), and Université de Lille-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Photocurrent, Range (particle radiation), Materials science, Physics and Astronomy (miscellaneous), Silicon, business.industry, Photoconductivity, Drop (liquid), Analytical chemistry, chemistry.chemical_element, Nanoparticle, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, 7. Clean energy, [SPI]Engineering Sciences [physics], Planar, chemistry, 0103 physical sciences, Optoelectronics, 0210 nano-technology, business, Absorption (electromagnetic radiation)
Abstract

We investigated the spectroscopic photocurrent response of photovoltaic devices versus an increasing number of drop-casted CdSe nanoparticles onto planar and nanocones silicon p-i-n junctions. For all samples, a strong enhancement of the photocurrent in the UV range was detected as well as a constant increase of the photocurrent up to 20% (16%) for a planar (nanocones) junction in the range 600–800 nm. The analysis of the photocurrent versus the number of drop casted nanoparticles layers allows us to evidence a down-shifting mechanism in the U-V range and an adaptative index effect below the threshold of absorption.

Published
2013
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2. Semiconductor nanoparticles for photovoltaics

Author

J. Habinshuti, S. Turrell, C. Kinowski, D. Stievenard, B. Grandidier, T. Xu, O. Cristini, P. M. Champion, L. D. Ziegler, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
Materials science, Scanning electron microscope, Photovoltaics, business.industry, Nanostructured materials, 0202 electrical engineering, electronic engineering, information engineering, 020206 networking & telecommunications, 020201 artificial intelligence & image processing, Nanotechnology, 02 engineering and technology, business, Semiconductor Nanoparticles
Published
2010
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3. Study of the effect of gas pressure and catalyst droplets number density on silicon nanowires growth, tapering, and gold coverage

Author

D. Stievenard, Rodrigue Lardé, Tao Xu, Philippe Pareige, J.P. Nys, Bruno Grandidier, Wanghua Chen, Emmanuel Cadel, Groupe de physique des matériaux (GPM), Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
inorganic chemicals, Materials science, Silicon, Nanowire, General Physics and Astronomy, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, Substrate (electronics), Chemical vapor deposition, 01 natural sciences, chemistry.chemical_compound, 0103 physical sciences, 010302 applied physics, Number density, technology, industry, and agriculture, Partial pressure, [CHIM.MATE]Chemical Sciences/Material chemistry, [CHIM.CATA]Chemical Sciences/Catalysis, 021001 nanoscience & nanotechnology, Silane, chemistry, Chemical engineering, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 0210 nano-technology, Molecular beam epitaxy
Abstract

We investigated the growth of silicon nanowires from Au-rich catalyst droplets by two different methods: chemical vapor deposition (CVD) and molecular beam epitaxy (MBE). The growth rate is found to be diameter-dependent and increases with increasing precursor partial pressures. The comparison of the experimental results with models shows that the contribution of Si atoms that diffuses from the substrate and the NW sidewalls toward the catalyst droplet can be neglected in CVD for the different pressures used in this study, whereas it is the major source of Si supply for the MBE growth. In addition, by decreasing the number density of catalyst droplet prior to the NW growth in CVD, it is also found that this parameter affects the NWs morphology, increasing the tapering effect when the silane partial pressure is small enough to allow gold atom diffusion from the catalyst droplet.

Published
2010
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4. Characterization of nanogap chemical reactivity using peptide-capped gold nanoparticles and electrical detection

Author

Oleg Melnyk, D. Stievenard, Lionel Marcon, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
Pharmacology, chemistry.chemical_classification, Aldehydes, Biomolecule, Organic Chemistry, Biomedical Engineering, Metal Nanoparticles, Pharmaceutical Science, Bioengineering, Peptide, Nanotechnology, 02 engineering and technology, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, Substrate Specificity, 0104 chemical sciences, Characterization (materials science), chemistry, Colloidal gold, Electrochemistry, Gold, Peptides, 0210 nano-technology, Biotechnology
Abstract

Nanogaps are usually combined with synthetic or biological molecules to produce nanodevices having novel properties. This combination is better realized by controlling the chemical properties of the nanogap. We show here that the presence of a specific chemical group inside nanogaps (30-90 nm) can be probed electrically using 10 nm gold nanoparticles derivatized by complementary functional groups. 100-10(4)-fold current increases were observed following the site-specific insertion of gold nanoparticles into the nanogap.

Published
2008
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5. Growth of Si nanowires on micropillars for the study of their dopant distribution by atom probe tomography

Author

D. Stievenard, Bruno Grandidier, J.P. Nys, Y. Coffinier, Rabah Boukherroub, Emmanuel Cadel, Philippe Pareige, Rodrigue Lardé, Tao Xu, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
Materials science, Silicon, Nanowire, Physics::Optics, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, Atom probe, 01 natural sciences, Atomic units, law.invention, Impurity, law, 0103 physical sciences, Physics::Atomic and Molecular Clusters, Electrical and Electronic Engineering, Boron, 010302 applied physics, Dopant, business.industry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, chemistry, Femtosecond, Optoelectronics, 0210 nano-technology, business
Abstract

This article reports on the growth of Au islands on the Si(111) surface as a function of the Au evaporation rate and the temperature of the surface in ultrahigh vacuum. By controlling the density of the Au islands and their size, it is possible to subsequently grow single vertically oriented Si nanowires on top of (111)-oriented silicon micropillar and analyze their chemical composition at the atomic scale with the femtosecond laser assisted tomographic atom probe. Three-dimensional images of the atom distribution in the nanowire, in particular, the distribution of boron impurities, are obtained and compared to the intended impurity concentration.

Published
2008
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6. Evidence of electron-phonon interaction on transport in n- and p-type silicon nanowires

Author

Bruno Grandidier, François Vaurette, J.P. Nys, Dominique Deresmes, D. Stievenard, Renaud Leturcq, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
Elementary particle interactions, Electron mobility, Materials science, Physics and Astronomy (miscellaneous), Silicon, Nanowire, Phonon scattering, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, [SPI]Engineering Sciences [physics], Electrical resistivity and conductivity, Electrostatics, 0103 physical sciences, Doping, Surface scattering, Ohmic contacts, 010302 applied physics, Condensed matter physics, Scattering, Nanowires, Quantum wire, Electron phonon, P type silicon, Transition metals, 021001 nanoscience & nanotechnology, Electronic transport, chemistry, Chemical elements, 0210 nano-technology
Abstract

The authors studied the transport in n- and p-type silicon nanowires. When the temperature decreases from 325to75K, they observed a variation of the nanowire resistance, consistent with a transport governed by electron-phonon scattering. The lateral size of the nanowire down to 25nm is not found to cause further surface scattering, due to the presence of interface states which create a depleted region in the nanowires. Such depleted region allows thus to keep a carrier mobility in the nanowires similar to the bulk one.

Published
2008
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7. Reversible defect engineering of single-walled carbon nanotubes using scanning tunneling microscopy

Author

Hidemi Shigekawa, Koji Sumitomo, Atsushi Taninaka, Bruno Grandidier, Yuta Ebine, Nobuyuki Fukui, D. Stievenard, Shoji Yoshida, Maxime Berthe, Satoru Suzuki, Yoshihiro Kobayashi, Hisanori Shinohara, Arifumi Okada, Ken Kanazawa, Osamu Takeuchi, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
Nanotube, Materials science, Band gap, Scanning tunneling spectroscopy, Bioengineering, Nanotechnology, 02 engineering and technology, Carbon nanotube, 01 natural sciences, law.invention, Condensed Matter::Materials Science, law, 0103 physical sciences, General Materials Science, 010306 general physics, Quantum tunnelling, business.industry, Mechanical Engineering, General Chemistry, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electrochemical scanning tunneling microscope, Carbon nanotube quantum dot, Optoelectronics, Scanning tunneling microscope, 0210 nano-technology, business
Abstract

The experimental creation and annihilation of defects on single-walled carbon nanotubes (SWCNT) with the tip of a scanning tunneling microscope are reported. The technique used to manipulate the wall structure of a nanotube at the atomic scale consists of a voltage ramp applied at constant tunneling current between the tip and the nanotube adsorbed on a gold substrate. While topographic images show an interference pattern at the defect position, spatially resolved tunneling spectroscopy reveals the presence of localized states in the band gap of the nanotube. Removal of the defect by the same procedure demonstrates the reversibility of the process. Such a precise control in the local modification of the nanotube wall opens up new opportunities to tailor SWCNT electronic properties at will.

Published
2007
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8. Trichlorosilane isocyanate as coupling agent for mild conditions functionalization of silica-coated surfaces

Author

Jean-Olivier Durand, Aurore Perzyna, Xavier Wallart, D. Stievenard, Michel Granier, Nicolas Ardes-Guisot, Y. Coffinier, Bruno Grandidier, Institut Charles Gerhardt Montpellier - Institut de Chimie Moléculaire et des Matériaux de Montpellier (ICGM ICMMM), Université Montpellier 1 (UM1)-Université Montpellier 2 - Sciences et Techniques (UM2)-Ecole Nationale Supérieure de Chimie de Montpellier (ENSCM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), and Ecole Nationale Supérieure de Chimie de Montpellier (ENSCM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Université Montpellier 1 (UM1)-Université Montpellier 2 - Sciences et Techniques (UM2)-Institut de Chimie du CNRS (INC)

Subjects
[PHYS]Physics [physics], Substrate (chemistry), 02 engineering and technology, Surfaces and Interfaces, 010402 general chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Isocyanate, 0104 chemical sciences, chemistry.chemical_compound, chemistry, Nucleophile, Trichlorosilane, Reagent, Monolayer, Electrochemistry, Surface modification, Organic chemistry, General Materials Science, Reactivity (chemistry), 0210 nano-technology, Spectroscopy
Abstract

Despite the importance of the isocyanate group in chemistry, very few examples of isocyanate-modified silicas have been reported, and all of the strategies described so far led to partial or total hydrolysis or condensation of the isocyanate group. By synthesizing trichlorosilane isocyanate as the coupling reagent, we show that oxidized silicon wafers are successfully modified with the isocyanate group. Our method is achieved in mild conditions, at low temperature, without side-reactions and allows the formation of a self-assembled monolayer (SAM) of isocyanates. The isocyanate group then offers a flexible way to further functionalize silica substrates with different nucleophiles, due to its high and specific reactivity.

Published
2005
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9. Charging and emission effects of multiwalled carbon nanotubes probed by electric force microscopy

Author

A. Huczko, C. Boyaval, Benoit Jouault, Mariusz Zdrojek, M. Wozniak, Leszek Adamowicz, Thierry Melin, D. Stievenard, W. Gebicki, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centrale de Micro Nano Fabrication - IEMN (CMNF-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Physique-IEMN (PHYSIQUE-IEMN), Groupe d'étude des semiconducteurs (GES), Centre National de la Recherche Scientifique (CNRS)-Université Montpellier 2 - Sciences et Techniques (UM2), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), Physique - IEMN (PHYSIQUE - IEMN), Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS), and Politechnika Warszawska (PW)

Subjects
Nanotube, Materials science, Physics and Astronomy (miscellaneous), Analytical chemistry, Mechanical properties of carbon nanotubes, 02 engineering and technology, Carbon nanotube, Dielectric, FILMS, 01 natural sciences, Capacitance, law.invention, [SPI]Engineering Sciences [physics], Condensed Matter::Materials Science, law, Electric field, 0103 physical sciences, 010306 general physics, business.industry, 021001 nanoscience & nanotechnology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Optical properties of carbon nanotubes, Field electron emission, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, 0210 nano-technology, business, FIELD-EMISSION
Abstract

Electrostatic properties of single-separated multiwalled carbon nanotubes (MWCNTs) deposited on a dielectric layer have been investigated by charge injection and electric force microscopy (EFM) experiments. We found that upon local injection from the biased EFM tip, charges delocalize over the whole nanotube length (i.e., 1-10 μ m), consistent with a capacitive charging of the MWCNT-substrate capacitance. In addition, the insulating layer supporting the nanotubes is shown to act as a charge-sensitive plate for electrons emitted from the MWCNTs at low electric fields, thus allowing the spatial mapping of MWCNT field-emission patterns. © 2005 American Institute of Physics.

Published
2005
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10. Compensation mechanisms in low-temperature-grown Ga1-xMnxAs investigated by scanning tunneling spectroscopy

Author

G. Mahieu, D. Stievenard, P. Condette, Masaaki Tanaka, Bruno Grandidier, H. Shimizu, Ph. Ebert, J.P. Nys, Guy Allan, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
Materials science, Physics and Astronomy (miscellaneous), Condensed matter physics, Dopant, Scanning tunneling spectroscopy, Fermi level, Magnetic semiconductor, Acceptor, law.invention, symbols.namesake, [SPI]Engineering Sciences [physics], law, symbols, Charge carrier, ddc:530, Scanning tunneling microscope, Spectroscopy
Abstract

Ga1-xMnxAs layers with Mn composition of up to 6.2% are investigated by cross-sectional scanning tunneling microscopy and spectroscopy. We identify in the tunneling spectra contributions from Mn-Ga(-) acceptor states, compensating As-Ga(2+) donor states, and additional compensating donor states, which we suggest to be Mn-i(2+) interstitials. On basis of the observed Fermi level shift and a charge carrier compensation analysis, we deduce the concentration of Mn-i(2+) interstitials. Furthermore, scanning tunneling microscopy images suggest an inhomogeneous distribution of Mn dopant atoms. (C) 2003 American Institute of Physics.

Published
2003
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11. Microscopic characterization of defects using scanning tunneling microscopy

Author

D Stievenard, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
Materials science, Silicon, Scanning tunneling spectroscopy, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, law.invention, Condensed Matter::Materials Science, law, Vacancy defect, 0103 physical sciences, General Materials Science, 010306 general physics, Spectroscopy, Condensed matter physics, Condensed Matter::Other, business.industry, Mechanical Engineering, Spin polarized scanning tunneling microscopy, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Semiconductor, chemistry, Mechanics of Materials, Density of states, Scanning tunneling microscope, 0210 nano-technology, business
Abstract

Using a scanning tunneling microscope (STM), it is possible to get microscopic characterization of defects in semiconductors. The atomic resolution allows the study of local atomic configuration, interface roughness or defects migration. Local spectroscopy allows for the determination the local density of state associated with the defect and its charge state. Illustrations of these possibilities are presented concerning the roughness of GaSb–InAs or InP–GaInAs interfaces and InAs quantum boxes buried in GaAs, the diffusion of vacancy in silicon, silicon dopants in GaAs, the charge state of the arsenic vacancy in GaAs and finally the STM and scanning tunneling spectroscopy (STS) of the antisite As Ga in GaAs. Finally, a discussion is proposed about a basic problem: how tunneling current occurs through defects? There is a necessary coupling between the energy level associated with the defect and the conduction or valence bands. This coupling is analysed in terms of emission and capture rates usually used for electrical characterization of the defects. Some new experimental suggestions are also proposed concerning the determination of the emission rate of a defect using the STM technique.

Published
2000

12. Formation of silicon islands on a silicon on insulator substrate upon thermal annealing

Author

J.P. Nys, D. Stievenard, Vincent Agache, Vincent Senez, Bernard Legrand, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
010302 applied physics, Auger electron spectroscopy, Materials science, Physics and Astronomy (miscellaneous), Silicon, Annealing (metallurgy), Nanocrystalline silicon, Analytical chemistry, chemistry.chemical_element, Coulomb blockade, Silicon on insulator, 02 engineering and technology, Thermal treatment, 021001 nanoscience & nanotechnology, 01 natural sciences, [SPI]Engineering Sciences [physics], chemistry, 0103 physical sciences, Vacuum chamber, Composite material, 0210 nano-technology
Abstract

Starting from silicon on insulator substrates, we show that a thermal treatment (in the 600–900 °C range) induces the creation of silicon islands. To characterize the island formation as well as the initial silicon layer thickness, we use in situ Auger electron spectroscopy analysis in an ultrahigh vacuum chamber. The island size and density are studied with an ex situ atomic force microscope. We show that the formation temperature of the islands increases from 575 to 875 °C as the initial silicon layer thickness increases from 1 to 19 nm. For the 1 nm thickness, the minimum island size is reached (semispherical shape with a 16 nm diameter). The phenomena involved in the island formation are discussed and the study of the variations of the calculated stress tensor (IMPACT software) as a function of the thermal treatment explain the behavior of the top silicon layer.

Published
2000
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13. Ion Implantation in Semiconductors

Author

D. Stiévenard, J.C. Bourgoin, D. Stiévenard, and J.C. Bourgoin

Subjects
Chemical engineering, Chemistry, Engineering, Physics
Abstract

The volume presents approximately 30 invited contributions.

Published
1988

14. Trichlorosilane isocyanate as coupling agent for mild conditions functionalization of silica-coated surfaces.

Author

Ardès-Guisot N, Durand JO, Granier M, Perzyna A, Coffinier Y, Grandidier B, Wallart X, and Stievenard D

Abstract

Despite the importance of the isocyanate group in chemistry, very few examples of isocyanate-modified silicas have been reported, and all of the strategies described so far led to partial or total hydrolysis or condensation of the isocyanate group. By synthesizing trichlorosilane isocyanate as the coupling reagent, we show that oxidized silicon wafers are successfully modified with the isocyanate group. Our method is achieved in mild conditions, at low temperature, without side-reactions and allows the formation of a self-assembled monolayer (SAM) of isocyanates. The isocyanate group then offers a flexible way to further functionalize silica substrates with different nucleophiles, due to its high and specific reactivity.

Published
2005
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15. Imaging the wave-function amplitudes in cleaved semiconductor quantum boxes

Author

Grandidier B, Niquet YM, Legrand B, Nys JP, Priester C, Stievenard D, Gerard JM, and Thierry-Mieg V V

Abstract

We have investigated the electronic structure of the conduction band states in InAs quantum boxes embedded in GaAs. Using cross-sectional scanning tunneling microscopy and spectroscopy, we report the direct observation of standing wave patterns in the boxes at room temperature. Electronic structure calculation of similar cleaved boxes allows the identification of the standing waves pattern as the probability density of the ground and first excited states. Their spatial distribution in the (001) plane is significantly affected by the strain relaxation due to the cleavage of the boxes.

Published
2000
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