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BackgroundCirculating aminotransferases (ALT and AST) have been used as biomarkers for liver injury. The causal relationships between aminotransferases and metabolic syndrome remain ambiguous.MethodsWe conducted bidirectional and multivariable Mendelian randomization (MR) analyses between aminotransferases and traits related to metabolic syndrome using genetic variants obtained from genome-wide association studies (GWASs). MR-PRESSO tests were adopted to remove outliers and eliminate pleiotropy. MR steiger tests were conducted to ensure the correct direction of the causal effects.ResultsBoth aminotransferases were risk factors for essential hypertension. ALT is a risk factor for type 2 diabetes. The bidirectional causal relationship between ALT and hyperglycemia, serum lipids, and obesity was demonstrated. The effect of fasting glucose on AST was demonstrated, while type 2 diabetes did not affect AST. The effect of HDL-C on ALT and the effect of triglycerides on AST were found in multivariable MR analyses.ConclusionsOur bidirectional MR analyses suggest that ALT and AST are causally associated with several metabolic syndrome-related traits, especially hypertension and type 2 diabetes. These findings highlight the potential role of aminotransferases as biomarkers and therapeutic targets for metabolic syndrome.

In order to enhance the service life of special complex shaped workpieces under severe working conditions, a new coating preparation process, namely, easy-coating and sintering technology, has been proposed. In this study, the feasibility of preparing Co-based coatings on 38CrMoAl substrates using the easy-coating and sintering process was investigated, and the microstructure and properties of the Co-based coatings were studied. By optimizing the parameters of the sintering process, the prepared coating is dense, and the coating forms a good metallurgical bond with the substrate with few pores, but no other defects. As the process has good applicability to the surface of complex-shaped parts, the inner wall of small serpentine tubes and large thicknesses, and is low-cost and easy to operate, the easy-coating-sintering process has great application prospects.

This Letter reports a highly scaled 90 nm gate length β-Ga2O3 (Ga2O3) T-gate MOSFET with a power gain cutoff frequency (fMAX) of 55 GHz. The 60 nm thin epitaxial Ga2O3 channel layer was grown by molecular beam epitaxy, while the highly doped (n++) source/drain regions were regrown using metal organic chemical vapor deposition. Maximum on current (IDS,MAX) of 160 mA/mm and trans-conductance (gm) around 36 mS/mm were measured at VDS = 10 V for LSD = 1.5 μ m device. Transconductance and on current are limited by high channel sheet resistance (Rsheet). Gate/drain breakdown voltage of 125 V was measured for LGD = 1.2 μ m. We extracted 27 GHz current gain cutoff frequency (fT) and 55 GHz fMAX for 20 V drain bias for unpassivated devices. While no current collapse was seen initially for both drain and gate lag measurements for 500 ns pulse, moderate current collapse was observed after DC, RF measurements caused by electrical stressing. We calculated a high fT. VBR product of 3.375 THz V, which is comparable to the state-of-the-art GaN HEMTs. This figure of merit suggests that Ga2O3 could be a potential candidate for X-band application. [ABSTRACT FROM AUTHOR]

We report on the growth of Si-doped homoepitaxial β-Ga2O3 thin films on (010) Ga2O3 substrates via metal-organic chemical vapor deposition (MOCVD) utilizing triethylgallium (TEGa) and trimethylgallium (TMGa) precursors. The epitaxial growth achieved an impressive 9.5 μm thickness at 3 μm/h using TMGa, a significant advance in material growth for electronic device fabrication. This paper systematically studies the Schottky barrier diodes fabricated on the three MOCVD-grown films, each exhibiting variations in the epilayer thickness, doping levels, and growth rates. The diode from the 2 μm thick Ga2O3 epilayer with TEGa precursor demonstrates promising forward current densities, the lowest specific on-resistance, and the lowest ideality factor, endorsing TEGa's potential for MOCVD growth. Conversely, the diode from the 9.5 μm thick Ga2O3 layer with TMGa precursor exhibits excellent characteristics in terms of lowest leakage current, highest on-off ratio, and highest reverse breakdown voltage of −510 V without any electric field management, emphasizing TMGa's suitability for achieving high growth rates in Ga2O3 epilayers for vertical power electronic devices. [ABSTRACT FROM AUTHOR]

β-phase gallium oxide (Ga2O3) is an emerging ultrawide bandgap (UWBG) semiconductor with a bandgap energy of ∼ 4.8 eV and a predicted high critical electric field strength of ∼8 MV/cm, enabling promising applications in next generation high power electronics and deep ultraviolet optoelectronics. The advantages of Ga2O3 also stem from its availability of single crystal bulk native substrates synthesized from melt, and its well-controllable n-type doping from both bulk growth and thin film epitaxy. Among several thin film growth methods, metalorganic chemical vapor deposition (MOCVD) has been demonstrated as an enabling technology for developing high-quality epitaxy of Ga2O3 thin films, (AlxGa1−x)2O3 alloys, and heterostructures along various crystal orientations and with different phases. This tutorial summarizes the recent progresses in the epitaxial growth of β-Ga2O3 thin films via different growth methods, with a focus on the growth of Ga2O3 and its compositional alloys by MOCVD. The challenges for the epitaxial development of β-Ga2O3 are discussed, along with the opportunities of future works to enhance the state-of-the-art device performance based on this emerging UWBG semiconductor material system. [ABSTRACT FROM AUTHOR]

Inclusions are one of the important factors affecting the cleanliness of molten steel. The current optimization of inclusion removal methods mainly focuses on promoting inclusions to float to the slag–steel interface so that the inclusions can be absorbed and removed by the refining slag. However, the research on the floating removal of inclusions cannot be carried out directly in the ladle, so methods such as mathematical models and physical models were developed. This article uses silicone oil to simulate the slag layer; polypropylene particles; and aluminum oxide particles to simulate inclusions to establish a water model experiment. By changing the viscosity of silicone oil and the diameter of particles, the factors affecting the movement of inclusions at the slag–steel interface were explored. Based on the water model, a mathematical model of the floating behavior of inclusions at the slag–steel interface was constructed, and parameters such as particle diameter and interfacial tension in the water model experiment were studied by the mathematical model for calculation. Both the mathematical model and the water model experimental results show that after the viscosity of silicone oil increases from 0.048 Pa·s to 0.096 Pa·s, the dimensionless displacement and terminal velocity of the particles decreases. When the diameter of the same particle increases, the dimensionless displacement and terminal velocity increases. The dimensionless displacement of polypropylene particles of the same diameter is larger than that of aluminum oxide particles, and the terminal velocity is smaller than that of aluminum oxide particles. This is attributed to the better overall three-phase wettability of polypropylene particle. When the liquid level increases, the dimensionless displacement and terminal velocity of particles under the same conditions show only slight differences (less than 10%). [ABSTRACT FROM AUTHOR]

The in situ metalorganic chemical vapor deposition (MOCVD) growth of Al2O3 dielectrics on β-Ga2O3 and β-(AlxGa1−x)2O3 films is investigated as a function of crystal orientations and Al compositions of β-(AlxGa1−x)2O3 films. The interface and film qualities of Al2O3 dielectrics are evaluated by high-resolution x-ray diffraction and scanning transmission electron microscopy imaging, which indicate the growth of high-quality amorphous Al2O3 dielectrics with abrupt interfaces on (010), (100), and ( 2 ¯ 01) oriented β-(AlxGa1−x)2O3 films. The surface stoichiometries of Al2O3 deposited on all orientations of β-(AlxGa1−x)2O3 are found to be well maintained with a bandgap energy of 6.91 eV as evaluated by high-resolution x-ray photoelectron spectroscopy, which is consistent with the atomic layer deposited (ALD) Al2O3 dielectrics. The evolution of band offsets at both in situ MOCVD and ex situ ALD deposited Al2O3/β-(AlxGa1−x)2O3 is determined as a function of Al composition, indicating the influence of the deposition method, orientation, and Al composition of β-(AlxGa1−x)2O3 films on resulting band alignments. Type II band alignments are determined at the MOCVD grown Al2O3/β-(AlxGa1−x)2O3 interfaces for the (010) and (100) orientations, whereas type I band alignments with relatively low conduction band offsets are observed along the ( 2 ¯ 01) orientation. The results from this study on MOCVD growth and band offsets of amorphous Al2O3 deposited on differently oriented β-Ga2O3 and β-(AlxGa1−x)2O3 films will potentially contribute to the design and fabrication of future high-performance β-Ga2O3 and β-(AlxGa1−x)2O3 based transistors using MOCVD in situ deposited Al2O3 as a gate dielectric. [ABSTRACT FROM AUTHOR]

In order to improve the surface performance of engineering components, a Ni60-Ti-B4C hard coating was prepared in-situ on the surface of Q235 using laser cladding method based on Ni60-Ti-B4C powder. The effect of process parameters (laser power and scanning speed) on the microstructure, dilution rate, microhardness and wear resistance of the coatings was investigated in detail. The highest microhardness and lower dilution rate coatings were obtained by process optimization. A laser power of 1000 W and scanning speed of 6 mm/s were found to be the optimum parameters. The optimized Ni60-Ti-B4C coating mainly consists of in-situ rod-like TiB2 and block-like TiC of different sizes with TiB2-TiC eutectic structure and small amounts of FeNi, Ni3Cr and NiSi phases. The optimized Ni60-Ti-B4C coating has a dilution rate of 27.1% and a wear loss of 2.1 mg. The microhardness is 1278 HV0.3, which is about 7 times of the microhardness of Q235 steel substrate, and 2.5 times the microhardness of laser cladding coated Ni60 coating. The abrasion of the Ni60-Ti-B4C coating is mainly adhesive abrasion. This study can provide a reference value for the use of surface technology to improve the overall performance of metal parts. [ABSTRACT FROM AUTHOR]

Vehicles sent location information to third parties to obtain location-based services in the Internet of vehicles, which may lead to vehicle trajectory privacy leakage. To address the privacy problem, trajectory privacy protection mechanism of obfuscating paths based on vehicles cooperation was proposed. Firstly, after the vehicle trajectory entropy reaches the custom trajectory protection threshold, the overhead of paths confusion saves by reducing the number of vehicle paths confusion. Then, paths confusion algorithm was designed to increase chances of vehicle paths confusion at intersections, which can improve the degree of vehicle trajectory protection. Finally, the simulation experiment verified the validity and efficiency of the method from the trajectory entropy and trajectory tracking success rate.

Advances in many isolation studies have revealed that pure Dehalococcoides grow stably, although the large‐scale pure cultivation of Dehalococcoides has yet to be established. In this study, 7 L‐culturing of Dehalococcoides mccartyi strain NIT01 was first performed using vessels made of glass and stainless alloy SUS304. All batches cultured in the glass vessel successfully dechlorinated >95% of 1 mM trichloroethene (TCE) to ethene (ETH), whereas only 5 out of 13 batches cultured in the SUS304 vessel did the same. The difference in dechlorination efficiency suggested the possible inhibition of dechlorination by SUS304. Also, the strain NIT01 showed long delays in dechlorination with pieces of SUS316, steel, and a repeatedly used SUS304, but not with titanium. The repeatedly used SUS304 cracked and increased the Fe2+ concentration to ≥76 μM. Dechlorination by this strain was also inhibited with ≥1000 μM Fe2+ and ≥23 μM Cr3+ but not with ≤100 μM Ni2+, suggesting that Cr3+ eluted from solid stainless alloys inhibited the dechlorination. Culturing in a titanium vessel instead of a stainless alloy showed the complete dechlorination of 1 mM TCE within 12–28 days with a growth yield of 2.7 × 107 cells/μmol‐released Cl−, even after repeating use of the vessels six times. [ABSTRACT FROM AUTHOR]

The effect of varying threading dislocation densities on the internal quantum efficiencies (IQEs) of InGaN quantum wells (QWs), with and without intentionally created "V-pits," is reported here. InGaN QW samples grown on GaN-on-sapphire templates with threading dislocation densities of <1 × 108 and <1 × 109 cm−2 are compared, with and without GaN/InGaN superlattice (SL) layers incorporated to intentionally open up the threading dislocation cores and form large-size "V-pits." The formation of "V-pits" is confirmed by cross-sectional transmission electron microscopy to initiate from threading dislocations in the SL layers. The densities of the pits are confirmed by plan-view SEM to agree with the substrate threading dislocation densities. The experimental room temperature IQEs of the "V-pit" QW samples are enhanced to 15% ± 1% compared to 6% ± 2% for conventional QW samples. Both conventional and "V-pit" samples show insensitivity to the magnitude of the dislocation densities with respect to IQE performance, while the "V-pit" samples show shifts in the peak emission wavelengths compared to the conventional samples, attributed to strain modulation. This study provides additional understanding of the causes of the observed insensitivity of the IQEs to different threading dislocation densities. [ABSTRACT FROM AUTHOR]

Growths of monoclinic (AlxGa1−x)2O3 thin films up to 99% Al contents are demonstrated via metalorganic chemical vapor deposition (MOCVD) using trimethylgallium (TMGa) as the Ga precursor. The utilization of TMGa, rather than triethylgallium, enables a significant improvement of the growth rates (>2.5 μm h−1) of β‐(AlxGa1−x)2O3 thin films on (010), (100), and (2¯01) β‐Ga2O3 substrates. By systematically tuning the precursor molar flow rates, growth of coherently strained phase pure β‐(AlxGa1−x)2O3 films is demonstrated by comprehensive material characterizations via high‐resolution X‐ray diffraction (XRD) and atomic‐resolution scanning transmission electron microscopy (STEM) imaging. Monoclinic (AlxGa1−x)2O3 films with Al contents up to 99, 29, and 16% are achieved on (100), (010), and (2¯01) β‐Ga2O3 substrates, respectively. Beyond 29% of Al incorporation, the (010) (AlxGa1−x)2O3 films exhibit β‐ to γ‐phase segregation. β‐(AlxGa1−x)2O3 films grown on (2¯01) β‐Ga2O3 show local segregation of Al along (100) plane. Record‐high Al incorporations up to 99% in monoclinic (AlxGa1−x)2O3 grown on (100) Ga2O3 are confirmed from XRD, STEM, electron nanodiffraction, and X‐ray photoelectron spectroscopy measurements. These results indicate great promises of MOCVD development of β‐(AlxGa1−x)2O3 films and heterostructures with high Al content and growth rates using TMGa for next‐generation high‐power and high‐frequency electronic devices. [ABSTRACT FROM AUTHOR]