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This paper presents the current -- voltage characterization in a temperature range between 197K and 298K of electronic devices fabricated with porous silicon. Ag-Au-PS-Si(p) heterojunctions present photovoltaic properties and have a rectifying behavior. I-V-T measurements under obscurity regime allow us to determine the barrier heights and the ideality factors of the devices. The devices with an interfacial layer of PS have the behavior known as the T0 effect for a Schottky junction which may be associated to the inhomogeneity of the barrier height or to the fact that the current is dominated by the mechanism of thermionic-field emission TFE). [ABSTRACT FROM AUTHOR]

Electrical caracterization was made using mesurements of Hall effect and isoterms curves I-V in layers of cuaternary system GaInAsSb grown by liquid phase epitaxy (LPE) thecnique on single GaSb:Te (100) substrate. The sign and carrier density were determined at room temperature. It was found samples are n-type and the calculated volume densities show strongly doped films. The curves I-V in a range from 75K to 300K, with silver contacs, they present Schottky barrier benhavior, with heights of the barriers around 0.4 eV at room temperature and decrese when the temperature lows. The ideality factors take values heigther than 1 when the temperature decrese. [ABSTRACT FROM AUTHOR]