79 results on '"J.-G. Provost"'
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2. <tex>$1.3\mu\text{m}$</tex> SI-BH Electro-Absorption Modulated Laser Operating at 56Gbauds/s with 8.4dB Dynamic Extinction Ratio
3. Dynamic and Noise Properties of High-Q Hybrid Laser
4. Record 2.84 THz Gain×Bandwidth of Monolithic O-Band SOA-UTe Receiver for Future Optical Networks
5. Record 6dBm Electroabsorption Modulated Laser For 10Gb/s and 25Gb/s High Power Budget Access Networks
6. Quasi frequency drift suppression for burst mode operation in low-cost thermally-tuned TWDM-PON
7. Transmission Over 50km at 10Gbs/s with a Hybrid III-V on Silicon Integrated Tunable Laser and Electro-absorption Modulator
8. Slow and fast light in quantum dot based semiconductor optical amplifiers
9. Gain Compression and Above-Threshold Linewidth Enhancement Factor in 1.3-$\mu\hbox{m}$ InAs–GaAs Quantum-Dot Lasers
10. 1.4 mA (70 mV) Peak-to-Peak Drive of 1.25 Gb/s Frequency Modulated Laser for WDM Coherent Access Networks
11. Optimization and Characterization of InGaAsN/GaAs Quantum-well Ridge Laser Diodes for High Frequency Operation
12. High-frequency performance of triple quantum well GaInNAs/GaAs ridge waveguide lasers emitting at 1.35 μm
13. Impact of intraband relaxation on the performance of a quantum-dot laser
14. DWDM Hybrid-Integrated TOSA and ROSA for 10$\,\times\,$10.7-Gb/s Transmission Over 75-km Links
15. High-Performance 100Gb/s DWDM Transmitter through Fully Passive Assembly of a Single-Chip Array of Directly Modulated Lasers with a SiO2 AWG
16. Optimized Modulation Bandwidth and Henry Factor of Fabry-Perot InAs/InP Quantum Dash Based Ridge Waveguide Lasers for Access/Metro Networks
17. High Bandwidth Operation of Directly Modulated Laser Based on Quantum-Dash InAs–InP Material at 1.55 $\mu$m
18. Tolerance to Optical Feedback of 10-Gb/s Quantum-Dash-Based Lasers Emitting at 1.51 $\mu$m
19. Floor free 10-Gb/s transmission with directly modulated GaInNAs-GaAs 1.35-/spl mu/m laser for metropolitan applications
20. Phase correlation between longitudinal modes in semiconductor self-pulsating DBR lasers
21. 12.5GB Operation of a Novel Monolithic 1.55µm BPSK Source Based on Prefixed Optical Phase Switching
22. AM and RIN of a Tunable Optically Pumped 1.6-<tex>$mu hboxm$</tex>VCSEL
23. New integrated buried laser-ridge modulator with identical active layer
24. Simple method to diagnose the performance of electroabsorption modulators on InP using optical low-coherence reflectometry
25. Single step measurement of optical transmitters Henry factor using sinusoidal optical phase modulations
26. Novel approach for Henry factor measurement based on sinusoidal optical phase modulation
27. 1550nm directly modulated lasers for 10Gb/s SMF transmission up to 65km at 45°C with chirp optimized InAs/InP quantum dashes
28. New approach based on linear spectrogram to measure optical delays in semiconductor optical amplifiers
29. Nearly degenerate four-wave mixing investigation of period doubling in semiconductor lasers
30. High-power 1.55μm VECSEL for mode-locked pulse generation with an InGaAsN/GaAsN fast saturable absorber mirror
31. Uncooled, isolator-free 10Gb/s transmission over 20 km of standard fibre at 1.55μm with directly modulated quantum dot DFB laser
32. Dynamic properties of InAs/InP (311)B quantum dot lasers emitting at 1.52 μm
33. 10 GHz modulation bandwidth of 1550nm InAs/InP Quantum Dash based lasers
34. Recent developments of InP-based quantum dashes for directly modulated lasers and semiconductor optical amplifiers
35. Low confinement factor quantum dash (QD) mode-locked Fabry-Perot (FP) laser diode for tunable pulse generation
36. InAs/InP based quantum dot mode-locked semiconductor lasers at 1.5 μm
37. High-power single-longitudinal-mode VECSEL at 1.55 μm with an hybrid metal-metamorphic bragg mirror
38. Tolerance to Optical Feedback of 10 GBPs Quantum-Dash Based Lasers Emitting at 1.55 μm
39. Wide Temperature Range Operation at 43Gbit/s of 1.55μm InGaAlAs Electroabsorption Modulated Laser with Single Active Layer
40. Tolerance to optical feedback of 10 Gbps quantum-dash based lasers emitting at 1.55 ¿m
41. 10 Gbit/s 1.55¿m 25km transmission at 90°C with New Self Thermally Compensated AlGaInAs Directly Modulated Laser
42. Temperature dependence of Henry factor of undoped and p-doped InAs/GaAs quantum-dot lasers emitting at 1.3 μm
43. 10 Gb/s transmission at 1.55 μm with directly modulated quantum dash laser and constant operation parameters up to 85°C
44. Chirp reduction in quantum dot-like semiconductor optical amplifiers
45. Injection locked DBR laser diode module for access applications
46. High modulation bandwidth reflective SOA for optical access networks
47. Recent advances in Quantum Dot material for microwave semiconductor lasers and amplifiers
48. Microwave Properties of High Modal Gain Quantum Dot InAs/GaAs Fabry-Pérot Lasers Emitting at 1.3 ¿m
49. First Demonstration of 10 Gb/s Direct Modulation with a Buried Ridge Distributed Feedback Laser based on Quantum Dash InAs/InP Material at 1.55 ¿m
50. 10-gigabit colourless reflective amplified modulator for access network
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