1. Modeling of Effective Thermal Resistance in Sub-14-nm Stacked Nanowire and FinFETs.
- Author
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Jain, Ishita, Gupta, Anshul, Hook, Terence B., and Dixit, Abhisek
- Subjects
POWER density ,FIELD-effect transistors ,SIMULATION methods & models ,COMPLEMENTARY metal oxide semiconductors ,ELECTRICAL engineering - Abstract
In advanced technology nodes, an increase in power density, use of nonplanar architectures, and novel materials can aggravate local self-heating due to active power dissipation. In this paper, 3-D device simulations are performed to analyze thermal effects in fin-shaped field-effect transistors (FinFETs) and stacked-nanowire FETs (NWFETs). Based on empirically extracted equations, a new model for thermal resistance estimation is proposed, which for the first time takes into account the aggregate impact of a number of fins, number of gate fingers, number, and dimensions of stacked nanowires. We have extracted the proposed model against calibrated 3-D TCAD simulations over a range of device design variables of interest. Our results show that the model may be useful for estimation of thermal resistance in FinFETs and NWFETs with large layouts. [ABSTRACT FROM AUTHOR]
- Published
- 2018
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