27 results on '"Ando, Yuto"'
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2. Impacts of off-angle and off-direction on surface morphology of GaN grown by metalorganic vapor phase epitaxy on (0001) GaN substrate
3. Non-planar growth of high Al-mole-fraction AlGaN on patterned GaN platforms for mitigating strain-induced cracks beyond the critical layer thickness
4. Author Correction: Laser slice thinning of GaN-on-GaN high electron mobility transistors
5. Laser slice thinning of GaN-on-GaN high electron mobility transistors
6. Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE
7. The effect of dry etching condition on the performance of blue micro light-emitting diodes with reduced quantum confined Stark effect epitaxial layer.
8. Non-planar growth of high Al-mole-fraction AlGaN heterostructures on patterned GaN substrates for ultraviolet laser diodes.
9. Thickness Measurement at High Lift-Off for Underwater Corroded Iron-Steel Structures Using a Magnetic Sensor Probe.
10. “Regrowth-free” fabrication of high-current-gain AlGaN/GaN heterojunction bipolar transistor with N-p-n configuration.
11. Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process.
12. Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg.
13. Impact of gate electrode formation process on Al2O3/GaN interface properties and channel mobility.
14. Vertical GaN-on-GaN nanowire Schottky barrier diodes by top-down fabrication approach.
15. Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching.
16. Experimental demonstration of GaN IMPATT diode at X-band.
17. Fabrication of GaN cantilever on GaN substrate by photo-electrochemical etching.
18. Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al2O3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces.
19. Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces.
20. Impact of high-temperature implantation of Mg ions into GaN.
21. Suppression of Green Luminescence of Mg‐Ion‐Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature.
22. Visualization of different carrier concentrations in n-type-GaN semiconductors by phase-shifting electron holography with multiple electron biprisms.
23. <italic>m</italic>‐Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off‐Angle <italic>m</italic>‐Plane GaN Substrates.
24. Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate.
25. Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE.
26. Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al2O3 Gate Dielectrics.
27. Thickness Measurement at High Lift-Off for Underwater Corroded Iron-Steel Structures Using a Magnetic Sensor Probe.
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