121 results on '"Sangsig Kim"'
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2. Binarized neural network of diode array with high concordance to vector–matrix multiplication
3. Stateful Logic Operation of Gated Silicon Diodes for In‐Memory Computing
4. Effect of interface defects on electrical characteristics of a-ITGZO TFTs under bottom, top, and dual gatings
5. Bidirectional Synaptic Operations of Triple‐Gated Silicon Nanosheet Transistors with Reconfigurable Memory Characteristics
6. Reconfigurable Logic‐In‐Memory Cell Comprising Triple‐Gated Feedback Field‐Effect Transistors
7. Generation and Storage of Random Voltage Values via Ring Oscillators Comprising Feedback Field-Effect Transistors
8. Temperature-Dependent Feedback Operations of Triple-Gate Field-Effect Transistors
9. Effects of Interface States on Electrical Characteristics of Feedback Field-Effect Transistors
10. Read Operation Mechanism of Feedback Field-Effect Transistors with Quasi-Nonvolatile Memory States
11. Logic‐In‐Memory Characteristics of Reconfigurable Feedback Field‐Effect Transistors with Double‐Gated Structure
12. Universal logic-in-memory cell enabling all basic Boolean algebra logic
13. Logic and memory functions of an inverter comprising reconfigurable double gated feedback field effect transistors
14. New ternary inverter with memory function using silicon feedback field-effect transistors
15. Logic‐in‐Memory Operation of Ternary NAND/NOR Universal Logic Gates using Double‐Gated Feedback Field‐Effect Transistors
16. Neural oscillation of single silicon nanowire neuron device with no external bias voltage
17. NAND and NOR logic-in-memory comprising silicon nanowire feedback field-effect transistors
18. Temperature-Dependent Electrical Characteristics of p-Channel Mode Feedback Field-Effect Transistors
19. Simulation studies on electrical characteristics of silicon nanowire feedback field-effect transistors with interface trap charges
20. One-transistor static random-access memory cell array comprising single-gated feedback field-effect transistors
21. Disturbance Characteristics of 1T DRAM Arrays Consisting of Feedback Field-Effect Transistors
22. Electrical Stability of p-Channel Feedback Field-Effect Transistors Under Bias Stresses
23. Prediction of Device Characteristics of Feedback Field-Effect Transistors Using TCAD-Augmented Machine Learning
24. Effect of net voltage of thermoelectric generator on performance of hybrid energy device
25. Performance Enhancement of Hybrid Energy Devices Using Cooling Patches
26. Integrate-and-Fire Neuron Circuit Without External Bias Voltages
27. Mechanism of carrier controllability with metal capping layer on amorphous oxide SiZnSnO semiconductor
28. Design and Simulation of Logic-In-Memory Inverter Based on a Silicon Nanowire Feedback Field-Effect Transistor
29. Switchable‐Memory Operation of Silicon Nanowire Transistor
30. Enhanced Thermoelectric Characteristics of Ag2Se Nanoparticle Thin Films by Embedding Silicon Nanowires
31. Characterization of a Photodiode Coupled with a Si Nanowire-FET on a Plastic Substrate
32. Building hybrid access control by configuring RBAC and MAC features.
33. A feature-based approach for modeling role-based access control systems.
34. Verification of Structural Pattern Conformance Using Logic Programming.
35. Photogating effects of HgTe nanoparticles on a single ZnO nanowire
36. Photoluminescence of ZnSe/ZnMnSe superlattices under hydrostatic pressure
37. Flexible semi-around gate silicon nanowire tunnel transistors with a sub-kT/q switch.
38. Gate-field dependent photosensitivity of soluble 1,2,4,5-tetra(5'-hexyl-[2,2']terthiophenyl-5-vinyl)-benzene based organic thin film transistors
39. Nondestructive Readout Memory Characteristics of Silicon Nanowire Biristors.
40. Electrical characteristics of a bendable a-Si:H thin film transistor with overlapped gate and source/drain regions.
41. Influence of thermal stress on heat-generating performance of indium tin oxide nanoparticle thin films.
42. Electrical and mechanical characteristics of fully transparent IZO thin-film transistors on stress-relieving bendable substrates.
43. Steep Subthreshold Swing n- and p-Channel Operationof Bendable Feedback Field-Effect Transistors with pâiân㖩⫞ by Dual-Top-Gate Voltage Modulation.
44. Electrical characteristics of flexible ZnO thin-film transistors annealed by microwave irradiation.
45. Voltage-induced electroluminescence characteristics of hybrid light-emitting diodes with CdSe/Cd/ZnS core-shell nanoparticles embedded in a conducting polymer on plastic substrates.
46. Stable Bending Performance of Flexible Organic Light-Emitting Diodes Using IZO Anodes.
47. Switching memory cells constructed on plastic substrates with silver selenide nanoparticles.
48. Electrical Characteristics of Hybrid Nanoparticle--Nanowire Devices.
49. Resistance switching memory devices constructed on plastic with solution-processed titanium oxideElectronic supplementary information (ESI) available: Switched states of our RRAM devices annealed at selected annealing temperatures, optical profiler images of the TiO2film of the RRAM device, and IâV curves obtained from RRAM devices with their different surface sizes. See DOI: 10.1039/b817062b
50. Electrical characteristics of Si-nanoparticle/Si-nanowire-based field-effect transistors.
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