37 results on '"Nakaharai, S."'
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2. Few-Layer ReS2 based Vertical p-n van der Waals Junction for Photosensing
3. Wafer Scale Fabrication of Transistors using CVD-Grown Graphene and its Application to Inverter Circuit
4. Room Temperature On-Off Operation of Current in He Ion Irradiated Graphene Sheet
5. Gating Operation of Transport Current in Graphene Nanoribbon Fabricated by Helium Ion Microscope
6. High Mobility sub-60nm Gate Length Germanium-On-Insulator Channel pMOSFETs with Metal Source/Drain and TaN MIPS Gate
7. Gate all around (GAA) strained-silicon-on-nothing (SSON) MOSFETs and evaluation of their strain by nano-beam diffraction (NBD)
8. Observation of Mobility Enhancement in Strained Si and SiGe Tri-Gate MOSFETs with Multi-Nanowire Channels Trimmed by Hydrogen Thermal Etching
9. Strained-SOI Technology for High-Speed CMOS Operation
10. Generation of Crystal Defects in Ge-on-Insulator (GOI) Layers in Ge-condensation Process
11. Formation of SGOI Structures with Low Dislocation Density by Two Step Oxidation and Condensation Method
12. Mobility-Enhanced CMOS Technologies Using Strained Si/SiGe/Ge Channels
13. Gate-tunable control in graphene semiconductive channel.
14. Experimental Evidence of Low Dislocation Density of SiGe-on-Insulator Substrates Fabricated by Oxidizing SiGe/SOI Structures
15. High performance multi-gate pMOSFET using uniaxially-strained SGOI channels.
16. Device characterizations and physical models of strained-Si channel CMOS.
17. Strained-Si/SiGe-on-insulator wafers fabricated by Ge-condensation process
18. Strained SOI technology for high-performance, low-power CMOS applications
19. Channel structure design, fabrication and carrier transport properties of strained-Si/SiGe-on-insulator (strained-SOI) MOSFETs
20. Physical mechanism for high hole mobility in [110]-surface strained- and unstrained-MOSFETs
21. Formation of SGOI Structures with Low Dislocation Density by Two Step Oxidation and Condensation Method
22. Generation of Crystal Defects in Ge-on-Insulator (GOI) Layers in Ge-condensation Process
23. Mobility-Enhanced CMOS Technologies Using Strained Si/SiGe/Ge Channels
24. Formation of SGOI Structures with Low Dislocation Density by Two Step Oxidation and Condensation Method
25. Generation of Crystal Defects in Ge-on-Insulator (GOI) Layers in Ge-condensation Process
26. (110)-surface strained-SOI CMOS devices with higher carrier mobility
27. Gate all around (GAA) strained-silicon-on-nothing (SSON) MOSFETs and evaluation of their strain by nano-beam diffraction (NBD).
28. Carrier-transport-enhanced CMOS using new channel materials and structures.
29. Strained-SOI/SGOI Dual Channel CMOS Technology Based on Ge Condensation Technique.
30. A new strained-SOI/GOI dual CMOS technology based on local condensation technique.
31. High velocity electron injection MOSFETs for ballistic transistors using SiGe/strained-Si heterojunction source structures.
32. Selectively-formed high mobility SiGe-on-Insulator pMOSFETs with Ge-rich strained surface channels using local condensation technique.
33. Strained-Si/SiGe-on-insulator wafers fabricated by Ge-condensation process.
34. (110)-surface strained-SOI CMOS devices with higher carrier mobility.
35. Strain evaluation for thin strained-Si on SGOI and strained-Si on nothing (SSON) structures using nano-beam electron diffraction (NBD).
36. Formation of strained Si/SiGe on insulator structure with a [110] surface.
37. Strained SOI technology for high-performance, low-power CMOS applications.
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