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2. Metal stack optimization for low-power and high-density for N7-N5

3. Impact of a SADP flow on the design and process for N10/N7 metal layers

5. High yield sub-0.1µm2 6T-SRAM cells, featuring high-k/metal-gate finfet devices, double gate patterning, a novel fin etch strategy, full-field EUV lithography and optimized junction design & layout

6. Full-field EUV and immersion lithography integration in 0.186μm2 FinFET 6T-SRAM cell

9. Imaging performance of the EUV alpha semo tool at IMEC

10. EUV pattern shift compensation strategies

23. Integration of tall triple-gate devices with inserted-Ta/sub x/N/sub y/ gate in a 0.274μm/sup 2/ 6t-sram cell and advanced CMOS logic circuits

29. A 0.314μm/sup 2/ 6T-SRAM cell build with tall triple-gate devices for 45nm node applications using 0.75NA 193nm lithography

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