1. A Three-Stage Charge Pump With Forward Body Biasing in 28 nm UTBB FD-SOI CMOS.
- Author
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Pinheiro, Carlos A., Olivera, Fabian, and Petraglia, Antonio
- Subjects
- *
ON-chip charge pumps , *SUPERCAPACITORS , *ENERGY harvesting , *STORAGE battery charging - Abstract
Energy harvesting techniques provide solutions for powering battery-free circuits or even for charging storage elements such as batteries or super capacitors. In this paper a self-starting switched-capacitor approach based on three-stage charge pump that is appropriate to thermoelectric and photo-voltaic energy harvesting, is carried out in a 28 nm ultra-thin buried oxide (UTBB) fully-depleted silicon-on-insulator (FD-SOI) CMOS technology. By taking advantage of the FD-SOI substrate characteristics, the forward-body-biasing (FBB) technique is applied in order to improve switch conductances. In addition, a sizing exploration of standard N-type and flipped-well P-type devices operating as switches is advanced, in order to provide optimum balance between their conductances. Extensive simulation results validate the proper operation of the charge pump at a minimum input voltage of 150 mV, and show a maximum efficiency peak of 63.3% at an input voltage of 350 mV and load a current of 500 nA. [ABSTRACT FROM AUTHOR]
- Published
- 2021
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