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The article discusses the Raman spectroscopy (RS) for imaging of silicon structures to characterize thin film and ion implanted silicon structures. The RS find applications in electronics like microelectromechanical systems (MEMS). The article further discusses the usefulness of imaging in revealing spatial heterogeneity of solid state structures where substrates are silicon, silicon dioxide, polycrystalline silicon and ion-implanted silicon.

Presents news briefs related to the ceramics industry as of July 2002. Law about the Child-resistant packaging of household products in the U.S.; Ion implantation and molecular beam epitaxy; Development of next-generation lithographic photomasks.

Reports on plasma source ion implantation technique (PSII) under development at the Los Alamos National Laboratory in New Mexico. Possibility of having more durable and longer-lasting machinery parts; Viability as alternative to chrome plating.

The article discusses on high voltage, low cost fets for HPA MMIC apllications. M/A-COM is a longtime supplier to the military, Navy, Army and Air Force of GaAs MMICs, employed in active phased array radars. To date, the company's GaAs process of choice has been its Multifunction Self-aligned Gate (MSAG) process. MSAG features selective ion implantation with noncontacting stepper lithography to provide a combination of excellent FET performance, very flexible circuit functionality, outstanding reliabilitv' and low manufacturing cost. Having been in continuous production since 1986, MSAG is a mature and well characterized process.

Presents news briefs on the semiconductor industry in the United States as of April 23, 2001. Patent for an ion-implant architecture received by Varian Semiconductor Equipment Associates Inc.; Settlement of patent litigation between KLA-Tencor Corp. and Therma-Wave Inc.; Launching of the MicroBaratron Vista 872B pressure transducer by MKS Instruments Inc.

The article reports on the partnership between IBM Corp. and semiconductor lithography materials supplier Rohm and Haas Electronic Materials to create patterning materials and processes to facilitate semiconductor implant at and below the 32 nm semiconductor manufacturing process node. The companies agreed to facilitate the development of total implant solutions for advanced technology nodes to support ion implantation. George Gomba of IBM cites the significance of the partnership and says there are many options for lithography at 32-nm and beyond.

The article reports on the settlement of a patent lawsuit filed by Varian Semiconductor Equipment Associates Inc. against Japan-based Nissin Ion Equipment Co. Ltd. The terms of the settlement did not include admission of infringement by Nissin. In a June 2004 lawsuit, Varian alleges that Nissin Ion infringed Varian patents titled Ion Beam Scanning Method and Apparatus and High Speed Movement of Workpieces in Vacuum Processing. Varian has emerged as the leading ion implant provider in 2005.

The article reports on the financial performance of Axcelis Technologies Inc. in the fourth quarter of 2005. The company posted revenue of $92.9 million in the quarter. Net loss during the period was $1.3 million or 1 cent per share. The increase in orders for ion implanters prompted the company to launch its Optima ion implant platform.

The article reports on the decision of Synopsys Inc. to implement the secondary ion mass spectrometry process data, developed by Varian Semiconductor Equipment Associates Inc., into its Sentarus Calibration Library in an effort to predict the response of semiconductors to varied implant process parameters. It states the significance of the ion implantation process data to Synopsys' product development. It also provides an overview of the manufacturing processes of Synopsys.

Reports on the debut of the Optima MD single wafer ion implant technology of Axcelis Technologies Inc. on February 21, 2005. Reason behind the changes in the traditional segmentation of the ion implant market; Key element behind the development of the Optima MD; Features of Optima.

Reports on the participation of Axcelis Technologies Inc. in the industrial affiliation program of the European research and development laboratory of Interuniversity Microelectronics Center (IMEC) in Leuven, Belgium as of February 2005. Reason of IMEC for choosing the low energy ion implant platform of Axcelis; Requirements for the halo processes.

Reports on a strategic partnership of semiconductor company ATMI Inc. with SemEquip Inc. to market ClusterBoron ion implant materials. Plans on the development of delivery systems for the products; Significance of the collaboration to the firms.

Reports on a strategic partnership formed by semiconductor materials and packaging supplier ATMI Inc. with SemEquip Inc. for the exclusive marketing of the ClusterBoron ion implant materials of ATMI. Terms of the deal; Significance of the deal to both companies.

Focuses on Quantum X, a single-wafer low current/high energy ion implanter launched by Applied Materials. Problems being faced by chipmakers in using batch high current implanters; Similarity of interconnect technology and transistor technology in terms of advanced technology nodes; Advantages of incorporating a single wafer tool in the technology.

Reports on an order for Therma-Probe XP 300 millimeter ion implant monitoring tools, claimed by Therma-Wave Inc. from an Asian producer of dynamic random-access memory, as of February 2, 2004. Estimated number of Therma-Probe systems installed worldwide; Information on the Therma-Probe XP Series; Remarks from Therma-Wave president and CEO Boris Lipkin on the company's ion implant monitoring tools.

Provides information on the victory of Applied Materials Inc. in a patent infringement lawsuit originally filed by Axcelis Technologies Inc. in Massachusetts. Merits of the case; Overview of the technology used in the contested Swift ion implanter; Evidences and documents used by the jury to arrive in their decision.

Reports on the implementation of e-diagnostics from IBM Corp. and ILS Technology LLC in June 2003. Software tools integrated by the two companies on its ion implantation and rapid thermal processing tools; Elements of the integrated software tools; Benefits of e-diagnostics.

Part II. Deals with the approach taken by Axcelis Technologies in selling ion implanters to the Japanese market. Reason behind the difficulty of foreign companies to enter the Japanese market; Benefit gained by Axcelis from its partnership with Sumitomo Heavy Industries; Concern of Axcelis on the economic status of Japan.

Focuses on ion-implant and rapid thermal processing tools from Axcelis Technologies Inc. Features of the company's HC3 tool; Information on Summit 300XT.

Features the MC3 ion implanter from Axcelis Technologies Inc. How MC3 was developed; Technologies used in the MC3.

The article presents information on ion implants with a thin layer of oxygen that give increased strength to the aluminum alloys. The ion implants have been developed by at Sandia National Laboratories in New Mexico. The ion implants accelerate aluminum alloys through a vacuum to a specific energy and fix them into a material.

Reports that Varian Associates and Eaton Semiconductor Equipment Operations, have warned of dismal quarterly results, closures or staff cuts due to the downturn in ion implanter sales. Impact of a lingering depression in the semiconductor industry on Varian's business; Decline of Eaton orders; Shutdown of Eaton's facility in Texas; Employee reduction at Varian's two facilities.

Focuses on the technical and economic challenges posed by ion implantation for semiconductor industry. Development of novel process integration strategies for the formation of ultrashallow p-type source/drain structures using boron implantation; Development of production-worthy equipment to address high-energy buried layers.

Reports on Eaton Semiconductor Operations' addition of an NV-8250 medium-current ion implanter to its line of implant products. Key features of the NV-8250 design; Schedule of Eaton's shipment of the product.

Reports that Genus Inc. is increasing its MeV ion implanter manufacturing capability by 400 percent. The plans to construct a facility to be completed in early 1996 which will be located near the company's current facility in Newburyport, Massachusetts.

Reports that Varian Associates is investing approximately $10 million for additional manufacturing space and capital equipment at its Ion Implant Systems business located in Gloucester, Massachusetts. The world demand for Varian's medium- and high-current ion implanters; Use of these devices in the manufacture of semiconductor products; Semiconductor fabrication equipment.

Reports on the orders for the NV-8200P ion implantation system received by the Semiconductor Equipment division of Eaton. System's introduction in Europe; Price.

Reports that ion implanters designers at Eaton Corporation's Semiconductor Equipment Division created an implanter to deliver boron beam currents at energies in the one to ten-keV range. Features of the implanter; Contact information.