35 results on '"Haendler, S."'
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2. Hot-carrier evaluation of a zero-cost transistor developed via process optimization in an embedded non-volatile memory CMOS technology
3. Low Frequency Noise Study of X-ray Irradiated Si/SiGe:C BiCMOS Technology Bipolar Transistors
4. Drain current local variability from linear to saturation region in 28 nm bulk NMOSFETs
5. Hot-carrier degradation model for nanoscale ultra-thin body ultra-thin box SOI MOSFETs suitable for circuit simulators
6. Characterization and modeling of drain current local variability in 28 and 14 nm FDSOI nMOSFETs
7. Low frequency noise variability in ultra scaled FD-SOI n-MOSFETs: Dependence on gate bias, frequency and temperature
8. Full gate voltage range Lambert-function based methodology for FDSOI MOSFET parameter extraction
9. Impact of Gamma irradiation on advanced Si/SiGe:C BiCMOS technology: comparison versus X-ray
10. Variability Evaluation of 28nm FD-SOI Technology at Cryogenic Temperatures down to 100mK for Quantum Computing
11. Localization of 1/f noise sources in Si/SiGe:C HBTs
12. 28nm FDSOI Platform with Embedded PCM for IoT, ULP, Digital, Analog, Automotive and others Applications
13. Effects of Total Ionizing Dose on 1-V and Low Frequency Noise characteristics in advanced Si/SiGe:C Heterojunction Bipolar Transistors
14. Self-Heating Effect in FDSOI Transistors Down to Cryogenic Operation at 4.2 K
15. Reliability assessment of 4GSP/s interleaved SAR ADC
16. Characterization, modeling and comparison of 1/f noise in Si/SiGe:C HBTs issued from three advanced BiCMOS technologies
17. Enhanced design performance thanks to adaptative body biasing technique in FDSOI technolologies
18. Low Frequency Noise in advanced 55nm BiCMOS SiGeC Heterojunction Bipolar Transistors: Impact of collector doping
19. Drain current local variability from linear to saturation region in 28nm bulk NMOSFETs
20. Measurement and characterization of low frequency noise collector current in 0.13 µm SiGe:C HBTs
21. 28nm FDSOI technology sub-0.6V SRAM Vmin assessment for ultra low voltage applications
22. Drain current local variability from linear to saturation region in 28nm bulk NMOSFETs
23. Low frequency noise temperature measurements in SiGe:C heterojunction bipolar transistors
24. Hot carrier degradation mechanisms of short-channel FDSOI n-MOSFETs
25. Measurement and characterization of low frequency noise collector current in 0.13 μm SiGe:C HBTs
26. Full front and back gate voltage range method for the parameter extraction of advanced FDSOI CMOS devices
27. Impact of Source–Drain Series Resistance on Drain Current Mismatch in Advanced Fully Depleted SOI n-MOSFETs
28. Low frequency noise statistical characterization of 14nm FDSOI technology node
29. A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz fT / 370 GHz fMAX HBT and high-Q millimeter-wave passives
30. Study of low frequency noise in advanced SiGe:C heterojunction bipolar transistors
31. Dispersion study of DC and Low Frequency Noise in SiGe:C Heterojunction Bipolar Transistors used for mm-Wave to Terahertz applications
32. Impact of low‐frequency noise variability on statistical parameter extraction in ultra‐scaled CMOS devices
33. Statistical analysis of dynamic variability in 28nm FD-SOI MOSFETs
34. Low frequency noise temperature measurements in SiGe:C heterojunction bipolar transistors.
35. Drain current local variability from linear to saturation region in 28 nm bulk NMOSFETs.
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