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III-V-compound semiconductors offer many advantages over silicon-based technologies traditionally used in solid-state photodetectors, especially in hard X-ray applications that require high detection efficiency and short response times. Amongst them, gallium arsenide (GaAs) has very promising characteristics in terms of X-ray absorption and high carrier velocity. Furthermore, implementing charge-multiplication mechanisms within the sensor may become of critical importance in cases where the photogenerated signal needs an intrinsic amplification before being acquired by the front-end electronics. This work reports on the experimental characterization by means of lasers and synchrotron radiation of gain, noise, and charge collection efficiencies of GaAs avalanche photodiodes (APDs), realized by molecular beam epitaxy (MBE), featuring separate absorption and multiplication regions (SAM) and different absorption region thicknesses. These devices have been fabricated to investigate the role of the thickness of the absorption region and of possible traps or defects at the metal-semiconductor interfaces in the collection efficiency in order to lay the groundwork for the future development of thicker GaAs devices for detection of hard X-rays.

We propose a simple expression to relate the total excess noise factor of a single-carrier multiplication staircase avalanche photodiode (APD) to the excess noise factor and gain given by the individual conduction band discontinuities. The formula is valid when electron impact ionization dominates hole impact ionization; hence, it is especially suited for staircase APDs with In-rich multiplication regions, as opposed, for example, to GaAs/AlGaAs systems where hole ionization plays an important role. The formula has been verified by accurate means of numerical simulations based on a newly developed nonlocal history dependent impact ionization model.

We present a Full-Band Monte Carlo (FBMC) investigation of impact ionization in GaAs p-i-n Avalanche Photodiodes (APDs). FBMC simulations have been used to compute the gain and the excess noise factor and a new equation has been derived for the extraction of history-dependent impact ionization coefficients from FBMC simulations. Results from FBMC are then compared with the ones of nonlocal historydependent impact ionization models. We found that at high reverse bias voltages it is important to take into account the fact that secondary carriers are generated with nonzero kinetic energy. Finally, we propose an improved history-dependent model using an energy-dependent mean free path.

A recently developed nonlocal history dependent model for electron and hole impact ionization is used to compute the gain and the excess noise factor in avalanche photodiodes featuring heterojunctions of III-V compound semiconductors while accounting for both carriers. The model has been calibrated with measurements by our group, as well as on noise versus gain data from the literature. We explore the avalanche photodiode design trade-offs related to the number of GaAs/AlGaAs conduction band steps for X-ray spectroscopy applications.

Extensive experimental characterization and TCAD simulation analysis have been used to study the dark current in Avalanche Photo-Diodes (APDs). The comparison between the temperature dependence of measurements and simulations points out that SRH generation/recombination is responsible for the observed dark current. After the extraction of the carrier lifetimes in the GaAs layers, they have been used to predict the APD collection efficiency of the photo-generated currents under realistic operation conditions and as a function of the photogeneration position inside the absorption layer.

This work focuses on avalanche photodiodes based on GaAs/AlGaAs with separated absorption and multiplication regions (SAM-APDs). The two regions are separated by a thin p-doped layer which, under the application of a reverse bias, is able to confine the potential drop only in the multiplication region. We realized such layer under the form of either a delta sheet of C atoms or a 50-nm-thick GaAs:C layer. Devices with these two structures will be discussed and compared in terms of capacitance and response to light.

An improved version of the Random Path Length algorithm is used to simulate the time response of Separate Absorption and Multiplication Avalanche PhotoDiodes (SAM-APDs) in the linear regime. The model takes into account both the diffusion and the drift of carriers in the absorption region as well as impact ionization scattering events in the multiplication region. An extended formulation of Ramo’s theorem is used to determine the current waveforms. The new algorithm has been used to extract the jitter of the time response of avalanche photodiodes to photons, which is a relevant figure of merit for time of flight applications of SAM-APDs. It is found that an electric field in the absorption region small enough to avoid unwanted carrier multiplication or band-to-band tunneling, is beneficial to reduce the jitter. Furthermore, we have found that, in APDs working in the linear regime, the stochastic duration of the current pulse makes difficult the use of circuit techniques, such as crossover timing, with constant delay lines aimed at detecting the individual pulses. The problem is partly mitigated when SAM-APDs are used for the detection of high energy photons, such as X-rays.

In the present study is shown a novel vacuum-based technique that enables production of hard polymeric nanocomposite coatings with metal (Cu) nanoparticles. This method is based on the use of gas aggregation source (GAS) of Cu nanoparticles and plasma-enhanced chemical vapour deposition of a-C:H matrix that was deposited in a mixture of Ar and n-hexane on the substrates placed on the powered RF electrode. This approach makes it possible to control independently both the properties of the matrix by variation of the applied RF power and the amount of incorporated Cu nanoparticles that may be adjusted by operational parameters of the GAS. Characterisation of the films in terms of their chemical composition, morphology, optical and mechanical properties is described here alongside with description of Cu nanoparticles production using GAS with variable aggregation length.

This work reports on the fabrication and characterization of a novel high-speed, low-noise X-ray Avalanche Photodiode based on III-V compound semiconductors operating over an extended photon energy range. These materials were suggested as their higher atomic numbers allow for the absorption of higher photon energies; hence, shorter response times can be achieved by growing APDs with thinner active regions. In addition, the use of staircase hetero-junctions enhances electron multiplication and results in lower noise if compared with conventional p-i-n diodes. In this work, molecular beam epitaxy was used to produce GaAs/AlGaAs APDs with separated absorption and multiplication regions. The multiplication region, separated from the absorption region by a ? p-doped layer of carbon, contains a staircase structure composed of nanometric layers of AlGaAs and GaAs, which alternate periodically. The periodic modulation of the band gap enables a well-defined charge multiplication and results in low multiplication noise. Several devices were characterized in terms of dark current, photocurrents generated utilizing visible and hard X-ray sources as well as noise generated under laser light.

Avalanche photodiodes based on GaAs/AlGaAs with separated absorption and multi- plication regions (SAM-APDs) will be discussed in terms of capacitance, response to light (gain and noise) and time response. The structures have been fabricated by molecular beam epitaxy introducing a δ p layer doped with carbon to separate the multiplication and the absorption re- gions. The thickness of the latter layer defines the detection efficiency and the time resolution of the structure, which in turn allows tailoring the device for specific scientific applications. Within the multiplication region a periodic modulation of the bandgap is obtained by growing alternating nanometric layers of AlGaAs and GaAs with increasing Al content; this staircase structure enables the tuning of the bandgap and subsequently provides a well-defined charge multiplication. The use of such staircase hetero-junctions enhances electron multiplication and conversely reduces — at least in principle — the impact of the noise associated to hole multiplication, which should result in a decreased overall noise, when compared to p-i-n diodes composed by a single material. The first part of this paper focuses on the electrical characteristics of the grown structure and on the comparison with the simulated behaviour of such devices. In addition, gain and noise measure- ments, which have been carried out on these devices by utilizing photons from visible light to hard X-rays, will be discussed and will be compared to the results of a nonlocal history-dependent model specifically developed for staircase APDs.

We report simulation results for gain and noise in avalanche photodiodes fabricated using heterojunctions of III-V compound semiconductors. We employ a recently developed nonlocal model for impact ionization. The model has been calibrated and validated on devices fabricated and measured in our labs and data from the literature. The model is then used to explore the design trade-offs related to the number of conduction band steps in staircase APDs for X-ray detection based on the GaAs/AlGaAs material system.

We present an improved Random Path Length algorithm to accurately and efficiently estimate the design space of heterostructure avalanche photodiodes (APDs) in terms of gain, noise and bandwidth without any need of full Monte Carlo transport simulations. The underlying nonlocal model for impact ionization goes beyond the Dead Space concept and it is suited to handle staircase structures composed by a superlattice of III-V compounds as well as thick and thin p-i-n APDs. The model parameters have been calibrated on GaAs and $Al_{x}Ga_{1-x}As$ p-i-n APDs in a previous work. In this work GaAs p-i-n APDs are compared to staircase structures in terms of noise and bandwidth.

We present a nonlocal history-dependent model for impact ionization gain and noise in avalanche photodiodes (APDs) especially suited for staircase APDs. The model uses a simple energy balance equation to define effective electric fields valid also in the presence of band discontinuities which are then used to express the ionization coefficients. The model parameters have been calibrated against literature data for gain and noise in GaAs and Al x Ga1− x As $({x} = {0.2}, {0.6}, {0.8})$ p-i-n diodes. Application to the experimental data for gain and noise in heterojunction and staircase separate absorption and multiplication APDs is reported to demonstrate the ability of the model in describing complex APD structures. It is found that, in spite of conduction band discontinuities being much larger than valence band ones, hole impact ionization contributes a significant degradation of the noise metrics in GaAs/AlGaAs staircase APDs. These nontrivial insights demonstrate the usefulness of the model to steer device design and optimization.

This work focuses on the development and the characterization of avalanche photodiodes with separated absorption and multiplication regions grown by molecular beam epitaxy. The i-GaAs absorption region is separated from the multiplication region by a δ p-doped layer of carbon atoms, which ensures that after applying a reverse bias, the vast majority of the potential drops in the multiplication region. Therein, thin layers of AlGaAs and GaAs alternate periodically in a so-called staircase structure to create a periodic modulation of the band gap, which under bias enables a well-defined charge multiplication and results in a low multiplication noise. The influence of the concentration of carbon atoms in the δ p-doped layer on the device characteristics was investigated and experimental data are presented together with simulation results.

The nanocomposite films Ag/a-C:H were prepared by vacuum-based method which combines deposition of Ag nanoparticles by means of gas aggregation source (GAS) and PECVD deposition of a-C:H matrix. The matrix was deposited in a mixture of Ar and n-hexane on the substrates placed on the powered RF electrode facing the beam of Ag NPs from the GAS. Anisotropic plasma etching was used to increase Ag concentration on the surface of the coating. The influence of three types of plasma on the chemical composition of the coatings and on the size of Ag nanoparticles is described. It is shown that the best etching selectivity and thus the highest Ag surface concentration was reached in case of etching of grounded samples in low pressure oxygen plasma. This treatment enhances the short term antibacterial efficiency of produced coatings.