40 results on '"Sangsig Kim"'
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2. Binarized neural network of diode array with high concordance to vector–matrix multiplication
3. Stateful Logic Operation of Gated Silicon Diodes for In‐Memory Computing
4. Effect of interface defects on electrical characteristics of a-ITGZO TFTs under bottom, top, and dual gatings
5. Bidirectional Synaptic Operations of Triple‐Gated Silicon Nanosheet Transistors with Reconfigurable Memory Characteristics
6. Reconfigurable Logic‐In‐Memory Cell Comprising Triple‐Gated Feedback Field‐Effect Transistors
7. Generation and Storage of Random Voltage Values via Ring Oscillators Comprising Feedback Field-Effect Transistors
8. Temperature-Dependent Feedback Operations of Triple-Gate Field-Effect Transistors
9. Effects of Interface States on Electrical Characteristics of Feedback Field-Effect Transistors
10. Read Operation Mechanism of Feedback Field-Effect Transistors with Quasi-Nonvolatile Memory States
11. Logic‐In‐Memory Characteristics of Reconfigurable Feedback Field‐Effect Transistors with Double‐Gated Structure
12. Universal logic-in-memory cell enabling all basic Boolean algebra logic
13. Logic and memory functions of an inverter comprising reconfigurable double gated feedback field effect transistors
14. New ternary inverter with memory function using silicon feedback field-effect transistors
15. Logic‐in‐Memory Operation of Ternary NAND/NOR Universal Logic Gates using Double‐Gated Feedback Field‐Effect Transistors
16. Neural oscillation of single silicon nanowire neuron device with no external bias voltage
17. NAND and NOR logic-in-memory comprising silicon nanowire feedback field-effect transistors
18. Temperature-Dependent Electrical Characteristics of p-Channel Mode Feedback Field-Effect Transistors
19. Simulation studies on electrical characteristics of silicon nanowire feedback field-effect transistors with interface trap charges
20. One-transistor static random-access memory cell array comprising single-gated feedback field-effect transistors
21. Disturbance Characteristics of 1T DRAM Arrays Consisting of Feedback Field-Effect Transistors
22. Prediction of Device Characteristics of Feedback Field-Effect Transistors Using TCAD-Augmented Machine Learning
23. Performance Enhancement of Hybrid Energy Devices Using Cooling Patches
24. Design and Simulation of Logic-In-Memory Inverter Based on a Silicon Nanowire Feedback Field-Effect Transistor
25. Performance Prediction of Hybrid Energy Harvesting Devices Using Machine Learning
26. Ammonia Gas Sensing Properties of 6,13-Bis(tri-isopropylsilyethynyl) Pentacene Based Field-Effect Transistor
27. Electrical Performance of Amorphous Oxide/Colloidal Quantum Dot/Amorphous Oxide Hybrid Thin Film Transistor
28. Steep Switching Characteristics of Partially Gated p+–n+–i–n+ Silicon-Nanowire Transistors
29. Thermoelectric Characteristics of Ultrathin Ag2Se Films with Durability Against Mechanical Stress
30. Logic-in-Memory Inverter Based on a Silicon Nanowire Feedback Field-Effect Transistor
31. NAND And NOR Logic-In-Memory Comprising Silicon Nanowire Feedback Field-Effect Transistors
32. One-transistor static random-access memory cell array comprising single-gated feedback field-effect transistors
33. Annealing effect on thermoelectric characteristics of Spin-coated Cu2Se nanoparticle thin films
34. Reconfiguration of operation modes in silicon nanowire field-effect transistors by electrostatic virtual doping
35. Dependence of latch-up and threshold voltages on channel length in single-gated feedback field-effect transistor
36. Bias-stress stability of top-gate coplanar a-ITGZO TFTs with HfO2 and HfAlO gate dielectrics
37. Logic and memory characteristics of an inverter comprising a feedback FET and a MOSFET
38. Reconfigurable Logic‐in‐Memory Using Silicon Transistors
39. Vertical all-in-one energy systems constructed with thermoelectric generators and microsupercapacitors
40. Electrical characteristics of flexible amorphous indium–tin–gallium–zinc oxide thin-film transistors under repetitive mechanical stress
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