1. Decoupling of Forward and Reverse Turn-on Threshold Voltages in Schottky-Type p-GaN Gate HEMTs.
- Author
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Chen, Junting, Hua, Mengyuan, Wang, Chengcai, Liu, Ling, Li, Lingling, Wei, Jin, Zhang, Li, Zheng, Zheyang, and Chen, Kevin J.
- Subjects
MODULATION-doped field-effect transistors ,THRESHOLD voltage ,WIDE gap semiconductors ,HIGH voltages ,ALUMINUM gallium nitride - Abstract
In a ${p}$ -channel field-effect-transistor (${p}$ -FET) bridge HEMT device recently realized on a commercial ${p}$ -GaN/AlGaN/GaN-on-Si power HEMT epi-wafer, it is revealed that the device’s reverse-conduction turn-on voltage (${V}_{\text {RT}}$) can be effectively decoupled from the forward threshold voltage (${V}_{\text {TH}}$) of Schottky-type ${p}$ -GaN gate HEMTs. Unlike the conventional Schottky-type ${p}$ -GaN gate HEMTs, of which ${V}_{\text {RT}}$ is closely linked to ${V}_{\text {TH}}$ , the ${p}$ -FET-bridge HEMT enables separate designs of ${V}_{\text {RT}}$ and $V_{\text {TH}}$ so that low-loss reverse conduction and high threshold voltage can be simultaneously realized. In addition, ${V}_{\text {RT}}$ can be further reduced by engineering the AlGaN barrier layer, which will also benefit a lower channel sheet resistance without lowering ${V}_{\text {TH}}$. [ABSTRACT FROM AUTHOR]
- Published
- 2021
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