24 results on '"Xu, Hanni"'
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2. Enhanced memory performance by tailoring the microstructural evolution of (ZrO2)0.6(SiO2)0.4 charge trapping layer in the nanocrystallites-based charge trap flash memory cells
3. Binary semiconductor In2Te3 for the application of phase-change memory device
4. Impact of the interfaces in the charge trap layer on the storage characteristics of ZrO2/Al2O3 nanolaminate-based charge trap flash memory cells
5. Polarization-controlled tunable rectifying behaviors in highly oriented (K,Na)NbO3/LaNiO3heterostructures on silicon
6. Encoding, training and retrieval in ferroelectric tunnel junctions
7. Non-saturating linear magnetoresistance in phase separated amorphous Ag10Ge15Te75 films
8. The chemically driven phase transformation in a memristive abacus capable of calculating decimal fractions
9. Enhanced charge storage characteristics by ZrO2 nanocrystallites precipitated from amorphous (ZrO2)0.8(SiO2)0.2 charge trapping layer
10. Redox-controlled memristive switching in the junctions employing Ti reactive electrodes
11. Preparation and characterization of GeTe4thin films as a candidate for phase change memory applications
12. Charge Trapping Memory Characteristics of p-Si/Ultrathin Al[sub 2]O[sub 3]∕(HfO[sub 2])[sub 0.8](Al[sub 2]O[sub 3])[sub 0.2]∕Al[sub 2]O[sub 3]/Metal Multilayer Structure
13. Phase Change Behavior in Ag[sub 10]Ge[sub 15]Te[sub 75] and the Electrolytic Resistive Switching in Both Amorphous and Crystalline Ag[sub 10]Ge[sub 15]Te[sub 75] Films
14. Effect of top electrode materials on bipolar resistive switching behavior of gallium oxide films
15. A TiAl2O5 nanocrystal charge trap memory device
16. Unipolar resistive switching behaviors in amorphous lutetium oxide films
17. Non-saturating linear magnetoresistance in phase separated amorphous Ag10Ge15Te75 films
18. Enhanced charge storage characteristics by ZrO2 nanocrystallites precipitated from amorphous (ZrO2)0.8(SiO2)0.2 charge trapping layer
19. Phase Change Behavior in Ag10Ge15Te75 and the Electrolytic Resistive Switching in Both Amorphous and Crystalline Ag10Ge15Te75 Films
20. Charge Trapping Memory Characteristics of p-Si/Ultrathin Al2O3????(?HfO2?)?0.8?(?Al2O3?)?0.2???Al2O3/Metal Multilayer Structure
21. A TiAl2O5 nanocrystal charge trap memory device.
22. Phase Change Behavior in Ag10Ge15Te75and the Electrolytic Resistive Switching in Both Amorphous and Crystalline Ag10Ge15Te75Films
23. Charge Trapping Memory Characteristics of p-Si/Ultrathin Al2O3∕ ( HfO2) 0.8( Al2O3) 0.2∕ Al2O3/Metal Multilayer Structure
24. Impact of the interfaces in the charge trap layer on the storage characteristics of ZrO2/Al2O3 nanolaminate-based charge trap flash memory cells
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