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Acoustically actuated magnetoelectric (ME) antennas based on resonant magnetoelectric coupling within ferromagnetic/piezoelectric ME laminated composites have recently been considered as a promising solution for antenna miniaturization. However, its radiation performance has been theoretically overestimated, since the negative effects on performances due to the magnetization saturation and the nonlinear mechanical behavior that occur from high-field driving have not been paid enough attention. This work presents a unique equivalent-circuit-based numerical method to analyze the near-field resonance radiation performances of ME antennas driven by high electric fields. In this method, we establish an equivalent circuit of the converse magnetoelectric effect for a ME laminated composite to describe the operating principle of acoustically actuated electromagnetic radiation. The equivalent parameters related to resonance characteristics are determined by fitting the circuit model to the data from frequency response measurements of the near-field magnetic flux density. The validity of the model is verified by comparing the theoretical predictions with the experimental results, in the view of the volume fraction dependence of the mechanical resonance-related radiation characteristics of the fabricated ME composites. Based on the proposed model, the influence of driving voltage amplitude on near-field radiation performances is further analyzed by experimental fitting to the model, and the potential limiting factors of ME antennas are discussed according to the driving-amplitude dependence of parameters obtained from the fit. This work provides an effective and engineering-friendly approach to predict the evolution of ME antenna performances, leading a way to improve the performance limit for resonant magnetoelectric coupling. [ABSTRACT FROM AUTHOR]

The micro-discharge effect limits the development of high-frequency microwave power components to miniaturization and integration. Therefore, it has become a focus of research to effectively suppress the micro-discharge effect, increase the micro-discharge threshold, and strengthen the environmental stability of high-frequency microwave devices. In this study, different elemental ratios of carbon (C)/silver (Ag)/titanium (Ti) composite films were obtained by multi-target magnetron co-sputtering technology and then systematically analyzed for micro-discharge effects. When the doping ratio of C/Ag/Ti was 3.538/1/0.013, the corresponding maximum secondary electron emission coefficient (δmax) decreased to 1.01 owing to the suppression of secondary electron emission by the increase in the content of sp2 hybrid bond. The micro-discharge threshold of Ku band waveguide filters coated with moderate C/Ag/Ti composite films showed an optimal performance of 10 000−12 500 W, which was increased by approximately 20 times. Moreover, the microstructure of the composite films exhibited higher density and flatness with a tiny increase in the titanium doping ratio, representing good environmental stability. Thus, the effective suppression of the secondary electron emission yield, significant improvement in the micro-discharge threshold, and enhancement of the environment stability of microwave components could be realized simultaneously by reasonably controlling the content of titanium in silver and titanium co-doped carbon-based composite films. [ABSTRACT FROM AUTHOR]

For the application of high-frequency current detection in power systems, such as very fast transient current, lightning current, partial discharge pulse current, etc., current sensors with a quick response are indispensable. Here, we propose a high-frequency magnetoelectric current sensor, which consists of a PZT piezoelectric ceramic and Metglas amorphous alloy. The proposed sensor is designed to work under d15 thickness-shear mode, with the resonant frequency around 1.029 MHz. Furthermore, the proposed sensor is fabricated as a high-frequency magnetoelectric current sensor. A comparative experiment is carried out between the tunnel magnetoresistance sensor and the magnetoelectric sensor, in the aspect of high-frequency current detection up to 3 MHz. Our experimental results demonstrate that the d15 thickness-shear mode magnetoelectric sensor has great potential for high-frequency current detection in smart grids. [ABSTRACT FROM AUTHOR]

Flexible electronics strongly demand the integration of flexible and large‐scale multifunctional oxides. BiFeO3 is one of the most essential multifunctional oxides that could be used in memories, logics, sensors, and actuators. Recently, freestanding single‐crystalline BiFeO3 membranes exhibited superior elasticity and flexibility. However, fabrication and integration of large‐scale freestanding BiFeO3 membranes into flexible electronics remain elusive. In this study, inch‐scale freestanding single‐crystalline BiFeO3 membranes are fabricated with assistance from a water‐soluble sacrificial layer. To transfer flat and crack‐free membranes, all the existing methods are first followed but fail. Then the study introduces a temporary supporting Cu layer on the surface of the as‐grown SiTiO3/Sr3Al2O6/(SrRuO3/)BiFeO3 heterostructure and successfully obtains full and crack‐free 5 mm × 5 mm freestanding membranes on various substrates. The residual strain within the heterostructure releases gradually under the protection of the Cu layer. The freestanding BiFeO3 membranes are relatively uniform among different regions and exhibit good dielectric, ferroelectric, and ferromagnetic properties. Finally, flexible ferroelectric photovoltaic devices are patterned based on those BiFeO3 membranes, and they have open circuit voltage and short circuit current density up to −0.25 ± 0.03 V and 0.82 ± 0.09 µA cm−2, respectively. [ABSTRACT FROM AUTHOR]

The scalable and low-cost room temperature (RT) synthesis for pure-iodine all-inorganic perovskite colloidal quantum dots (QDs) is a challenge due to the phase transition induced by thermal unequilibrium. Here, we introduce a direct RT strongly confined spontaneous crystallization strategy in a Cs-deficient reaction system without polar solvents for synthesizing stable pure-iodine all-inorganic tin-lead (Sn-Pb) alloyed perovskite colloidal QDs, which exhibit bright yellow luminescence. By tuning the ratio of Cs/Pb precursors, the size confinement effect and optical band gap of the resultant CsSnxPb1-xI3 perovskite QDs can be well controlled. This strongly confined RT approach is universal for wider bandgap bromine- and chlorine-based all-inorganic and iodine-based hybrid perovskite QDs. The alloyed CsSn0.09Pb0.91I3 QDs show superior yellow emission properties with prolonged carrier lifetime and significantly increased colloidal stability compared to the pristine CsPbI3 QDs, which is enabled by strong size confinement, Sn2+ passivation and enhanced formation energy. These findings provide a RT size-stabilized synthesis pathway to achieve high-performance pure-iodine all-inorganic Sn-Pb mixed perovskite colloidal QDs for optoelectronic applications. Photoactive pure-iodine all-inorganic colloidal perovskite quantum dots (QDs) are attractive for optoelectronic applications, however their synthesis at room temperature is challenging. Here the authors report a room temperature strongly confined strategy to synthesize CsSnxPb1-xI3 QDs. [ABSTRACT FROM AUTHOR]

Integration of magnetic materials into bio‐integrated flexible electronics will bring multi‐functionality, such as magnetoception and wireless communication. In practical application, the performance of magnetic materials and devices should remain stable during cyclic bending–unbending and they can be degradable within a designated lifetime. However, direct integration of magnetic materials with flexible and biocompatible materials and maintaining mechanically stable microwave performance have not been achieved yet. Here, ultrathin (5–50 nm) permalloy (NiFe) films deposited on biocompatible silk fibroin (SF) films are shown to be bending stable, and dissolvable. The ferromagnetic properties of NiFe films deposited on SF, Kapton, and silicon are studied and compared by ferromagnetic resonance. Benefiting from the low surface roughness of fibroin, which is only ≈0.8 nm, SF/NiFe films exhibit comparable ferromagnetic properties to Si/NiFe, better than that of Kapton/NiFe films. Moreover, the ferromagnetic resonance field of SF/NiFe films remains highly stable during cyclic bending that is exposed to both compressive and tensile strain/stress, and its temperature stability is very close to that of Si/NiFe. Finally, the whole SF/NiFe films are demonstrated to be dissolvable and biocompatible. Therefore, SF/NiFe films can be a useful and stable platform for flexible and biocompatible microwave applications. [ABSTRACT FROM AUTHOR]

MnZn ferrites that exhibit low core losses at high frequencies are suitable for the integration and miniaturization of power conversion devices. To obtain low core losses at high frequencies, it is important to understand the underlying mechanism. In this work, MnZn ferrites with various grain sizes were produced by changing the sintering temperature. The relationship between domain morphology, dynamic magnetization behavior, and core losses at high frequencies was carefully investigated. As the average grain size approached the critical size of single‐domain state, the contribution of domain wall displacement to complex permeability decreased, while domain wall resonant frequency improved significantly, resulting in the suppression of residual loss at 3 MHz. As the average grain size increased, the domain morphology changed from a single‐domain state to a multidomain state, which increased the initial permeability and decreased hysteresis loss. However, the number of domain walls increased, causing a significant decrease in the domain wall resonant frequency, and resulting in a sharp increase in residual loss. These results provide valuable insights into reducing high‐frequency core losses in MnZn ferrites by domain engineering. [ABSTRACT FROM AUTHOR]

Unidirectional magnetic anisotropy induced by exchange bias (EB) between ferromagnetic and antiferromagnetic layers is of paramount importance in various spintronic devices. Traditional setting and optimization of EB involve cooling through the Néel temperature of the antiferromagnets under biasing field in vacuum furnace which takes hours of time and cannot realize localized control of EB. Herein, an alternative process to configure EB by injection of microsecond current impulse for locally heating of the heterostructure is reported. 180‐degree exchange bias switching has been realized in both anisotropic magnetoresistance and giant magnetoresistance units, resulting in tunable magnetic field sensing functionalities. This mechanism for pinpoint control of EB provides more freedom for the design and optimization of various sensing and logic spintronics. [ABSTRACT FROM AUTHOR]

The scalable and low-cost room temperature (RT) synthesis for pure-iodine all-inorganic perovskite colloidal quantum dots (QDs) is a challenge due to the phase transition induced by thermal unequilibrium. Here, we introduce a direct RT strongly confined spontaneous crystallization strategy in a Cs-deficient reaction system without polar solvents for synthesizing stable pure-iodine all-inorganic tin-lead (Sn-Pb) alloyed perovskite colloidal QDs, which exhibit bright yellow luminescence. By tuning the ratio of Cs/Pb precursors, the size confinement effect and optical band gap of the resultant CsSn x Pb 1-x I 3 perovskite QDs can be well controlled. This strongly confined RT approach is universal for wider bandgap bromine- and chlorine-based all-inorganic and iodine-based hybrid perovskite QDs. The alloyed CsSn 0.09 Pb 0.91 I 3 QDs show superior yellow emission properties with prolonged carrier lifetime and significantly increased colloidal stability compared to the pristine CsPbI 3 QDs, which is enabled by strong size confinement, Sn 2+ passivation and enhanced formation energy. These findings provide a RT size-stabilized synthesis pathway to achieve high-performance pure-iodine all-inorganic Sn-Pb mixed perovskite colloidal QDs for optoelectronic applications., (© 2024. The Author(s).)