1. Temperature-dependent electroluminescence of stressed and unstressed InAlGaN multi-quantum well UVB LEDs.
- Author
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Höpfner, Jakob, Gupta, Priti, Guttmann, Martin, Ruschel, Jan, Glaab, Johannes, Kolbe, Tim, Rass, Jens, Knauer, Arne, Stölmacker, Christoph, Einfeldt, Sven, Wernicke, Tim, Weyers, Markus, and Kneissl, Michael
- Subjects
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LIGHT emitting diodes , *QUANTUM wells , *QUANTUM efficiency , *ELECTROLUMINESCENCE , *LOW temperatures - Abstract
The electroluminescence of UVB light-emitting diodes emitting at 310 nm before and after 1000 h of operation is studied in the temperature range from 20 to 340 K. Before operation, the external quantum efficiency (EQE) at 10 mA gradually increases with decreasing temperature from 0.8% at 340 K to 1.8% at 150 K and then levels off. This trend is attributed to a reduction of non-radiative recombination and finally the domination of radiative recombination at low temperatures. After 1000 h of operation, the EQE has dropped to 0.45% at 340 K with a maximum EQE of 1.4% at 80 K, followed by a drop for temperatures below 80 K. These findings suggest a stress-induced reduction of both the radiative recombination efficiency and the carrier injection efficiency. [ABSTRACT FROM AUTHOR]
- Published
- 2023
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