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The crystal structures and electrical properties of lead-free BiFeO3-BaTiO3 [(1-x)BFxBT] piezoelectric system are investigated as a function of BaTiO3 concentration. The well-saturated P-E hysteresis loop was observed in the 0.80BiFeO3–0.20BaTiO3 composition system, while a less hysteretic strain-electric field curve was exhibited by the 0.70BiFeO3–0.30BaTiO3 with a strain hysteresis of 16%, the value comparable to PZT-based piezoelectric ceramics. The crystal structures investigated under the synchrotron radiation X-ray diffraction exhibited a rhombohedral structure for BFBT system with x=0.10–0.25 and a pseudo-cubic structure for BFBT system with x=0.30–0.40. The structural phase diagram for the BiFeO3-BaTiO3 system is suggested based on the results of temperature-dependent synchrotron radiation X-ray diffraction measurement and investigated electrical properties. [ABSTRACT FROM AUTHOR]

The structural and electrical properties of the virgin, annealed, and quenched samples of 0.80BiFeO3--0.20BaTiO3 lead-free ceramics were investigated. The crystal structures investigated with the structure refinement method exhibited a rhombohedral structure for all the samples. The significant enhancement of ferroelectric and piezoelectric properties is ascribed to the relaxation of the lattice strain induced in the samples after the heat treatment. The bond-length calculated from the final structure refinement results revealed the increment of the A-O bond-length after the heat treatment, while the B-O bond-length was maintained in all the virgin, annealed, and quenched samples suggesting the specific influence of the lattice strain at the A-site of the material system. [ABSTRACT FROM AUTHOR]

Electrical bias and light stressing followed by natural recovery of amorphous hafnium-indium-zinc-oxide (HIZO) thin film transistors with a silicon oxide/nitride dielectric stack reveals defect density changes, charge trapping and persistent photoconductivity (PPC). In the absence of light, the polarity of bias stress controls the magnitude and direction of the threshold voltage shift (ΔVT), while under light stress, VT consistently shifts negatively. In all cases, there was no significant change in field-effect mobility. Light stress gives rise to a PPC with wavelength-dependent recovery on time scale of days. We observe that the PPC becomes more pronounced at shorter wavelengths. [ABSTRACT FROM AUTHOR]

We developed amorphous hafnium-indium-zinc oxide (HIZO) thin films as oxide semiconductors and investigated the films electrically and physically. Adding of hafnium (Hf) element can suppress growing the columnar structure and drastically decrease the carrier concentration and hall mobility in HIZO films. The thin film transistors (TFTs) with amorphous HIZO active channel exhibit good electrical properties with field effect mobility of around 10 cm2/Vs, S of 0.23 V/decade, and high Ion/off ratio of over 108, enough to operate the next electronic devices. In particular, under bias-temperature stress test, the HIZO TFTs with 0.3 mol % (Hf content) showed only 0.46 V shift in threshold voltage, compared with 3.25 V shift in HIZO TFT (0.1 mol %). The Hf ions may play a key role to improve the instability of TFTs due to high oxygen bonding ability. Therefore, the amorphous HIZO semiconductor will be a prominent candidate as an operation device for large area electronic applications. [ABSTRACT FROM AUTHOR]

Bipolar ac stress-induced instability of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors is comparatively investigated with that under a positive dc gate bias stress. While the positive dc gate bias stress-induced threshold voltage shift (ΔVT) is caused by the charge trapping into the interface/gate dielectric as reported in previous works, the dominant mechanism of the ac stress-induced ΔVT is observed to be due to the increase in the acceptorlike deep states of the density of states (DOS) in the a-IGZO active layer. Furthermore, it is found that the variation of deep states in the DOS makes a parallel shift in the IDS-VGS curve with an insignificant change in the subthreshold slope, as well as the deformation of the CG-VG curves. [ABSTRACT FROM AUTHOR]

We investigated the effect of the high-k TiOx (k∼40) gate dielectric on the mobility (μFE) of indium-gallium-zinc oxide (IGZO) transistors. As the thickness of the TiOx layer at the interface of the IGZO channel and SiNx gate dielectric layer increased from 2 to 8 nm, the μFE value was monotonously reduced from 9.9 to 1.8 cm2/V s. The degradation of the mobility was attributed to the Coulomb scattering mechanism rather than the phonon scattering mechanism of the high-k TiOx layer based on the behavior of the temperature-dependent mobilities for all of the IGZO transistors. [ABSTRACT FROM AUTHOR]

A fully transparent nonvolatile memory with the conventional sandwich gate insulator structure was demonstrated. Wide band gap amorphous GaInZnO (a-GIZO) thin films were employed as both the charge trap layer and the transistor channel layer. An excellent program window of 3.5 V with a stressing time of 100 ms was achieved through the well-known Fowler–Nordheim tunneling method. Due to the similar energy levels extracted from the experimental data, the asymmetrical program/erase characteristics are believed to be the result of the strong trapping of the injected negative charges in the shallow donor levels of the GIZO film. [ABSTRACT FROM AUTHOR]

Amorphous-gallium-indium-zinc-oxide (a-GIZO) thin filmtransistors (TFTs) are fabricated without annealing, using processes and equipment for conventional a-Si:H TFTs. It has been very difficult to obtain sound TFT characteristics, because the a-GIZO active layer becomes conductive after dry etching the Mo source/drain electrode and depositing the a-SiO2 passivation layer. To prevent such damages, N2O plasma is applied to the back surface of the a-GIZO channel layer before a-SiO2 deposition. N2O plasma-treated a-GIZO TFTs exhibit excellent electrical properties: a field effect mobility of 37 cm2/V s, a threshold voltage of 0.1 V, a subthreshold swing of 0.25 V/decade, and an Ion/off ratio of 7. [ABSTRACT FROM AUTHOR]

We have demonstrated a self-aligned top-gate amorphous gallium indium zinc oxide thin film transistor (a-GIZO TFT). It had a field effect mobility of 5 cm2/V s, a threshold voltage of 0.2 V, and a subthreshold swing of 0.2 V/decade. Ar plasma was treated on the source/drain region of the a-GIZO active layer to reduce the series resistance. After Ar plasma treatment, the surface of the source/drain region was divided into In-rich and In-deficient regions. The a-GIZO TFT also had a constant sheet resistance of 1 kΩ/□ for a film thickness of over 40 nm. The interface between the source/drain Mo metal and the Ar plasma-treated a-GIZO indicated a good Ohmic contact and a contact resistivity of 50 μΩ cm2. [ABSTRACT FROM AUTHOR]