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In application scenarios such as astronautics, high-altitude aircraft, medical radiography, high-energy physics, and nuclear power plants, the irradiation resistance of electronic components is one of the basic requirements for their reliability. HfO 2 -based ferroelectric films have the advantages of high CMOS process compatibility, good miniaturizability, low operating voltage, and excellent irradiation resistance, which are the core materials for the new generation of irradiation resistance ferroelectric memories. In this paper, two kinds of metal-electrode ferroelectric capacitors, W/Hf 0.5 Zr 0.5 O 2 /W (WW) and Pt/Hf 0.5 Zr 0.5 O 2 /Pt (PP), have been prepared, and three gradient γ-irradiation experiments have been carried out on the two kinds of ferroelectric capacitors. The effect of metal electrodes on the irradiation resistance of Hf 0.5 Zr 0.5 O 2 ferroelectric thin films was carefully investigated by comparing and analyzing the statistical laws of polarization change and rectangularity change before and after irradiation of a large number of devices. The experimental results show that the WW devices have better irradiation resistance than PP devices, and we further explain the irradiation resistance mechanism by first-principle calculations and finite element analysis to verify the credibility of the experimental results. Finally, we conducted a comparative test of the fatigue and wake-up characteristics of the WW devices before and after irradiation, and the results show that the prepared W/Hf 0.5 Zr 0.5 O 2 /W devices can withstand very high total γ-dose radiation, reaching up to 13.86 Mrad(Si), and they are very suitable for the application of irradiation resistant electronics. [Display omitted] • The Hf 0.5 Zr 0.5 O 2 (HZO) thin films with outstanding ferroelectric properties were prepared. • The HZO ferroelectric thin films exhibited extremely high radiation tolerance (reaching up to 13.86 Mrad(Si)). • The effect of different metal electrodes on the irradiation resistance of HZO ferroelectric thin films was analyzed. [ABSTRACT FROM AUTHOR]

• Monolayer MoO 3 /MoO x were prepared by plasma oxidation and atomic layer etching. • The proposed process can precisely control the thickness of molybdenum oxide. • The prepared monolayer molybdenum oxide has good surface morphology and uniformity. In this letter, we propose two different methods to prepare monolayer MoO 3 and MoO x by low-temperature inductively coupled plasma etching technology. The monolayer MoO 3 is obtained by soft oxygen plasma oxidation of monolayer MoS 2 due to the high specific surface area. The monolayer MoO x is prepared through plasma oxidation and atomic layer-by-layer etching of multilayer MoS 2 due to the weak van der Waals interaction between the layers. It is proved that the prepared monolayer molybdenum oxide has good surface morphology and highly controllable components. The proposed process can precisely control the thickness of molybdenum oxide and has good uniformity and higher selectivity. This work could promote the application of atomically thin transition metal oxides in two-dimensional materials based electronic devices and its integration. [ABSTRACT FROM AUTHOR]

A square 3D-Trench electrode Si detector structure is simulated using a 3D TCAD tool. Electrical characteristics including electrostatic potential, electric field, leakage current, and capacitance have been simulated in detail. It has been found in simulations that both leakage current and the voltage to reach the geometry capacitance (full depletion voltage, V fd ) increase with radiation fluence. The geometry capacitance is 99 fF for the standard structure in our study. Detector geometry capacitance׳s dependence on the length and area of the collection column has also been simulated. [ABSTRACT FROM AUTHOR]

3D-trench electrode detectors were simulated in this paper. Charge collection of 3D-trench electrode detector was simulated using the full 3D device simulation. The induced current and collected charge caused by drifting carriers, generated by a minimum ionizing particle (MIP) incident through the detector, have been modeled and calculated. The results indicate that the total collected charge in irradiated detector change with particle incident position and radiation fluence. In addition, we have estimated the average total collected charge generated by a MIP incident in 3D-trench electrode detector. [ABSTRACT FROM AUTHOR]

• This study explored the influence of thickness and temperature on the electrical properties of Pt / HfO 2 / Al 2 O 3 / TiN structure RRAM devices. • Adjust the performance of the device by adjusting the thickness of the double-layer film. • The results obtained have important guiding significance for one-step experimental application. Thin films with HfO 2 /Al 2 O 3 laminated structure were prepared by the ALD method in this paper. Typical bipolar resistance switching characteristics were observed in the Pt/HfO 2 /Al 2 O 3 /TiN structure device. The samples were characterized by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The effects of dielectric thickness and different test temperatures on the electrical performance were investigated. Experiments show that when the thickness of HfO 2 /Al 2 O 3 is 7 nm/3 nm, the electrical properties are the best. As the test temperature increases, the resistance values (R LRS and R HRS) of the Pt/HfO 2 /Al 2 O 3 /TiN structure fluctuate more and more. When the test temperature approaches the failure temperature, the device's transition voltages (V Set and V Reset) will also become more volatile. [ABSTRACT FROM AUTHOR]

The friction behavior of monolayer molybdenum diselenide (MoSe 2) under normal electric field was studied by the atomic force microscope. The friction coefficients of MoSe 2 are increasing with bias voltage applied on the Si substrate. The results show that the adhesion and electrostatic forces increase with bias and approximately follow a parabolic law. The friction force and surface potential are of the same tendency with bias application time, and the contribution of charges accumulation to friction is considerable. The mechanisms of the friction behavior under external normal electric field were explained with electrostatic force and adsorption. This study reveals a possibility of electronically controlling friction in two-dimensional MoSe 2 system, with potential applications in solid lubricant and moving parts for MEMS devices. • The friction behavior of monolayer MoSe 2 nanosheet can be modulated under normal electric field investigated by the AFM. • The friction coefficient, adhesion force and electrostatic force increase with the sample bias. • The mechanisms of friction behaviors under normal electric field were explained with electrostatic force and absorption. • A possibility of electronically controlling friction is provided in 2D MoSe 2 system. [ABSTRACT FROM AUTHOR]

Total-ionizing dose effects on the resistive switching properties of HfO 2 /Al 2 O 3 bipolar resistive-random-access-memory devices under 60Co γ irradiation were investigated in this study. Insignificant impact was found for 60Co γ irradiation with a dose of 200 krad (Si) but the impact became significant for higher irradiation intensity of 1 Mrad (Si). The experiment results indicated that it is possible for device high resistance off-state or low resistance on-state to change after a total ionizing dose step stress threshold being surpassed. Moreover, it was found that the 60Co γ irradiation of 1 Mrad (Si) caused degradation of device high-resistance state, low-resistance state, set/reset voltages, and endurance characteristics, due to the simultaneous induce of oxygen vacancies and displacement damage. Unlabelled Image [ABSTRACT FROM AUTHOR]