27 results on '"Fulford J"'
Search Results
2. Ultra thin oxide reliability: effects of gate doping concentration and poly-Si/SiO/sub 2/ interface stress relaxation
3. Enhanced hot-hole degradation in P/sup +/-poly PMOSFETs with oxynitride gate dielectrics.
4. Breakdown mechanisms and stress-induced leakage current in ultra-thin oxides and N/sub 2/O oxynitrides.
5. The effect of hydrogen denudation on thin oxides, device performance, and epitaxial elimination.
6. Impact Of Boron Penetration On Gate Oxide Reliability And Device Lifetime In P+-poly PMOSFETs.
7. Performance and hot-carrier reliability of N- and P-MOSFETs with rapid thermally NO-nitrided SiO/sub 2/ gate dielectrics.
8. Polarity dependence of dielectric breakdown in scaled SiO/sub 2/.
9. Study of NBTI Stress in P+-Poly PMOSFETs with Gate Oxides Grown on Nitrogen Implanted Si Substrates.
10. MOSFET characteristics of ultra thin CVD Si3N4 gate dielectrics.
11. Impact of boron penetration on gate oxide reliability and device lifetime in p/sup +/-poly PMOSFETs.
12. The effects of nitrogen implant into gate electrode on the characteristics of dual-gate MOSFETs with ultra-thin oxide and oxynitrides.
13. Suppressed boron penetration in P/sup +/-poly PMOSFETs with NO-nitrided SiO/sub 2/ gate dielectrics.
14. Performance and reliability assessment of dual-gate CMOS devices with gate oxide grown on nitrogen implanted Si substrates.
15. Ultra thin (<20 /spl Aring/) CVD Si/sub 3/N/sub 4/ gate dielectric for deep-sub-micron CMOS devices.
16. Effects of East China Sea Shallow-Water Environment on Acoustic Propagation.
17. Effects of Korean Littoral Environment on Acoustic Propagation.
18. Discrete Test Structure Device Degradation Analysis and Correlation to NAND Flash Circuit Operation.
19. Impact Of Boron Penetration On Gate Oxide Reliability And Device Lifetime In P+-poly PMOSFETs
20. Impact of boron penetration on gate oxide reliability and device lifetime in p/sup +/-poly PMOSFETs
21. The effects of nitrogen implant into gate electrode on the characteristics of dual-gate MOSFETs with ultra-thin oxide and oxynitrides
22. The effect of hydrogen denudation on thin oxides, device performance, and epitaxial elimination
23. Suppressed boron penetration in P/sup +/-poly PMOSFETs with NO-nitrided SiO/sub 2/ gate dielectrics
24. Ultra thin (>20 Å) CVD Si/sub 3/N/sub 4/ gate dielectric for deep-sub-micron CMOS devices
25. Performance and reliability assessment of dual-gate CMOS devices with gate oxide grown on nitrogen implanted Si substrates
26. Hydrogen denudation for enhanced thin oxide quality, device performance, and potential epitaxial elimination.
27. One time programming device yield study based on anti-fuse gate oxide breakdown on p-type and n-type substrates.
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.