21 results on '"Moise, T."'
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2. Low-power ferroelectric random access memory embedded in 180nm analog friendly CMOS technology
3. 180nm FRAM reliability demonstration with ten years data retention at 125°C
4. Reliability of Ferroelectric Random Access memory embedded within 130nm CMOS
5. Reliability characterization of a Ferroelectric Random Access Memory embedded within 130nm CMOS
6. Reliability Demonstration of a Ferroelectric Random Access Memory Embedded within a 130nm CMOS Process
7. Scaling reliability and modeling of ferroelectric capacitors.
8. An 8Mb 1T1C ferroelectric memory with zero cancellation and micro-granularity redundancy.
9. Reliability properties of low voltage PZT ferroelectric capacitors and arrays.
10. Empirical model for fatigue of PZT ferroelectric memories.
11. Hydrogen-related burn-in in GaAs/AlGaAs HBTs and implications for reliability.
12. A novel BST storage capacitor node technology using platinum electrodes for Gbit DRAMs.
13. Reliability properties of low-voltage ferroelectric capacitors and memory arrays.
14. Empirical model for fatigue of PZT ferroelectric memories
15. Embedded ferroelectric memory using a 130-nm 5 metal layer Cu / FSG logic process
16. Reliability properties of low voltage PZT ferroelectric capacitors and arrays
17. A novel BST storage capacitor node technology using platinum electrodes for Gbit DRAMs
18. Embedded ferroelectric memory using a 130-nm 5 metal layer Cu / FSG logic process.
19. A 64 Mbit embedded FeRAM utilizing a 130 nm, 5LM Cu/FSG logic process.
20. Quantitative simulation of strained and unstrained InP-based resonant tunneling diodes.
21. FRAM memory technology - advantages for low power, fast write, high endurance applications.
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