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2. A c-axis aligned crystalline IGZO FET and a 0.06-μm2 HfO2-based Capacitor 1T1C FeRAM with High Voltage Tolerance and 10-ns Write Time

21. Water-bloom treatment by underwater pulsed streamer-like discharges

23. Novel Channel-Stress Enhancement Technology with eSiGe S/D and Recessed Channel on Damascene Gate Process

27. A planar transistor for the 32-nm node and beyond with an ultra-shallow junction fabricated using in-situ doped selective Si epitaxy

28. A Promising Planar Transistor with in-situ Doped Selective Si Epitaxy Technology (GORES MOSFET) for 32nm node and beyond

30. A Raised Source/Drain Extension pFET on Si (110) Realized by In-situ Doped Selective Epitaxy Technology

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