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A single channel 100 Gb/s dual–polarization quadrature phase shift keying transmission based on injection-locked broadband quantum-dash Fabry–Pérot laser, and employing external modulation, has been demonstrated. By employing a far L–band ~1621-nm sub-carrier, −17.4-dBm sensitivity at the bit error rate 3.8\times 10^-3 has been obtained after 10 km standard single mode fiber transmission. Besides, an injection locked mode wavelength tunability of ~23 nm, which translates to ~50 sub-carriers, is accomplished. These results favor the viability of deploying broadband quantum-dash lasers as unified upstream and downstream transmitters in next generation wavelength division multiplexed-based passive optical networks. [ABSTRACT FROM PUBLISHER]

We investigate the amplitude and phase noise of an optical frequency comb based on InAs/InP quantum-dash mode-locked laser. The laser demonstrates low relative intensity noise (< −125 dB/Hz) and phase noise in the passive mode-locking regime. By actively mode-locking the laser, we observe a reduction in the flicker FM noise and timing jitter, as a result of which the optical linewidth decreases, and hence the effective bandwidth compatible with optical coherent systems increases by more than 50% to $\sim 1.1$ THz. [ABSTRACT FROM PUBLISHER]

We report on the high-performance characteristics from superluminescent diodes (SLDs) based on four-stack InAs/InGaAlAs chirped-barrier thickness quantum dash (Qdash) in a well structure. The active region exhibits a measured broad gain spectrum of 140 nm, with a peak modal gain of ~41 cm-1. The noncoated two-section gainabsorber broad-area and ridge-waveguide device configuration exhibits an output power of > 20 mW and > 12 mW, respectively. The corresponding -3-dB bandwidths span ~82 nm and ~72 nm, with a small spectral ripple of <; 0.2 dB, related largely to the contribution from dispersive height dash ensembles of the highly inhomogeneous active region. These C-L communication band devices will find applications in various cross-disciplinary fields of optical metrology, optical coherent tomography, etc. [ABSTRACT FROM PUBLISHER]

In this paper, we present a systematic investigation of passive mode-locked InAs/InP quantum-dash lasers in terms of frequency and timing stability. Mode-locking features are analyzed using the frequency domain approach based on the concept of supermodes. It is shown that the phase of adjacent longitudinal modes is correlated over 1.3-THz frequency span. The observed strong coherence between modes enables low timing jitter and a long-term stability of the repetition rate frequency within 5×10-8 over 100 s. [ABSTRACT FROM PUBLISHER]

In this paper, we assessed the effect of additionally broadened quantum dash (Qdash) optical transitions in the multi-stack dash-in-a-well laser structure at both, material and device level. A broad photoluminescence linewidth of ~ 150 nm demonstrates the formation of highly inhomogeneous InAs-dashes across the stacks. The transmission electron microscopy revealed small (large) average dash height from the Qdash stack with thick (thin) over grown barrier layer. The Fabry-Perot laser diodes fabricated from this chirped structure exhibits unique device physics under the short pulsewidth (SPW) and quasi-continuous wave (QCW) operation. Varying the ridge-width (W) from 2 to 4 μm showed quenching of ultrabroad lasing signature in the SPW operation, and consistent even for a wide 15 μm oxide strip laser diode. A lasing spectral split with reduced intensity gap in the center is observed in the QCW operation with the gap decreasing with increasing ridge-width. Such atypical lasing operation, influenced by the waveguiding mechanism is qualitatively realized by associating to the reduced vertical coupling effect of the Qdash stacks in the operation of small ridge-width lasers compared with large ridge-width and oxide stripe lasers, and leading to varying non-uniform distribution of carriers among the inhomogeneously broadened Qdash stacks in each case. Our chirped 2 × 830 μm ridge laser demonstrated marked improvement in the internal quantum efficiency (~ 80%) and -3 dB lasing bandwidth, centered at ~1.61 μm. [ABSTRACT FROM PUBLISHER]

We study the enhanced inhomogeneity across the InAs quantum-dash (Qdash) layers by incorporating a chirped AlGaInAs barrier thickness in the InAs/InP laser structure. The lasing operation is investigated via Fabry-Pérot ridge-waveguide laser characterization, which shows a peculiar behavior under quasi-continuous-wave (QCW) operation. Continuous energy transfer between different dash ensembles initiated quenching of lasing action among certain dash groups, causing a reduced intensity gap in the lasing spectra. We discuss these characteristics in terms of the quasi-zero-dimensional density of states (DOS) of dashes and the active region inhomogeneity.

We report an InP based vertical cavity surface emitting laser (VCSEL) achieving a lasing operation between 1529 and 1646 nm. This optically-pumped VCSEL includes a wide-gain bandwidth active region based on InAs quantum dashes and wideband dielectric Bragg mirrors. Based on a wedge microcavity design, we obtain a spatial dependence of the resonant wavelength along the wafer, enabling thus to monitor the gain material bandwidth. We demonstrate a 117 nm continuous wavelength variation of the VCSEL emission, a consequence of the important and wide gain afforded by the use of optimized quantum dashes. [ABSTRACT FROM PUBLISHER]

Presents the table of contents for this issue of the periodical. [ABSTRACT FROM PUBLISHER]

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