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Your search keyword '"Fujisawa, T."' showing total 4 results
Start Over Author "Fujisawa, T." Publisher institution of engineering & technology
4 results on '"Fujisawa, T."'

1. 1.3 µm, 50 Gbit/s electroabsorption modulators integrated with DFB laser for beyond 100G parallel LAN applications.

Author

Fujisawa, T., Takahata, K., Kobayashi, W., Tadokoro, T., Fujiwara, N., Kanazawa, S., and Kano, F.

Subjects
*ELECTRONIC modulators, *LASERS, *LOCAL area networks, *BIT rate, *WAVELENGTHS
Abstract

A 1.3 µm, 50 Gbit/s electroabsorption modulator integrated with a DFB laser for future parallel LAN, the total data rate of which is over 100 Gbit/s, is developed. Very clear eye openings after 40 km transmission under 50 Gbit/s operation on singlemode fibre are demonstrated for eight wavelengths with discrete packages for the first time. [ABSTRACT FROM AUTHOR]

Published
2011
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2. 25 Gbit/s 1.3 µm InGaAlAs-based electroabsorption modulator integrated with DFB laser for metro-area (40 km) 100 Gbit/s Ethernet system.

Author

Fujisawa, T., Arai, M., Fujiwara, N., Kobayashi, W., Tadokoro, T., Tsuzuki, K., Akage, Y., Iga, R., Yamanaka, T., and Kano, F.

Subjects
*ETHERNET, *INDUSTRIAL lasers, *DATA transmission systems, *LIGHT sources, *FIBERS
Abstract

A high-performance 1.3 µm InGaAlAs electroabsorption modulator integrated with a DFB laser for the metro-area 100 Gbit/s Ethernet system (100GBASE-LR4 and -ER4) has been developed. 40 km transmission under 25 Gbit/s operation on singlemode fibre that is required for 100GBASE-ER4 application at 40°C is demonstrated for the first time. [ABSTRACT FROM AUTHOR]

Published
2009
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3. Uncooled (25–85°C) 10 Gbit/s operation of 1.3 µm-range metamorphic Fabry-Perot laser on GaAs substrate.

Author

Arai, M., Tadokoro, T., Fujisawa, T., Kobayashi, W., Nakashima, K., Yuda, M., and Kondo, Y.

Subjects
ELECTRONIC modulation, MODULATION theory, LASERS, DIODES, GALLIUM arsenide, ELECTRIC currents
Abstract

The first direct modulation of a 1.3 µm-range metamorphic laser diode on a GaAs substrate has been realised. A 200 µm-long device had threshold currents as low as 5.2 and 11.4 mA at 25 and 85°C, respectively. This laser also achieved 10 Gbit/s direct modulation up to 85°C. [ABSTRACT FROM AUTHOR]

Published
2009
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4. High-temperature operation of 1.26 µm Fabry-Perot laser with InGaAs metamorphic buffer on GaAs substrate.

Author

Arai, M., Fujisawa, T., Kobayashi, W., Nakashima, K., Yuda, M., and Kondo, Y.

Subjects
*LASERS, *WAVEGUIDES, *SUBSTRATES (Materials science), *SURFACES (Technology), *EPITAXY
Abstract

A 1.26 µm ridge waveguide laser diode with an InGaAs metamorphic buffer on a GaAs substrate grown by metal-organic vapour-phase epitaxy has been successfully developed. This laser has achieved the highest operating temperature (173°C) for continuous-wave operation reported for a metamorphic laser. [ABSTRACT FROM AUTHOR]

Published
2008
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