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The influence of Joule heating on current filaments evolving during the reverse recovery phase in high-power diodes is analysed by electro-thermal simulations. Depending on the turn-off conditions, transitions of the uniform current-density distribution into a quasi-static filament, a travelling filament, or a periodic current-density distribution may occur. Simulations show under which conditions a pure electronic mechanism or Joule heating may cause the evolution of travelling current filaments. In general, strong local heating favours the transition of static into travelling structures. Under certain conditions, the simultaneous activation of the electronic and the thermal mechanism may lead to the coexistence of filaments travelling with different velocities. [ABSTRACT FROM AUTHOR]

Presented is a simple and easy-to-implement design for an arbitrary waveform power controller. The power dissipation in an active semiconductor device is controlled by virtue of its current and voltage for any waveform. By measuring the heating effect on an electronic product, an engineer can evaluate the effectiveness of its design. The controller is demonstrated practically with a MOSFET using an arbitrary waveform, and power dissipated in the device agrees well with intended dissipation. [ABSTRACT FROM AUTHOR]

A correction to the article "Arbitrary waveform power controller for thermal measurements of semiconductor devices" that was published in the May 24, 2012 issue is presented.

1.1 µm-range high-speed oxide-VCSELs with InGaAs/GaAsP strain-compensated multiple quantum wells (MQWs) have been developed. 25 Gbit/s 100°C operation and high reliability over 3 000 h under 150°C were demonstrated. [ABSTRACT FROM AUTHOR]