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2021International Conference on Information Technology and Big Data Engineering were successfully held online from 25th to 27th of April 2021, Wuhan, China. The conference was jointly organized and sponsored by Shaanxi Juxing Exhibition Co., Ltd and Juneng Electronic Technology Co., Ltd. Called by Dr. Wei Wei from Xi'an University of Technology and researcher Jia Han from College of Computer Science, Xi'an Shiyou University, the conference invited scholars and experts in the fields of information technology, big data engineering, computer engineering from various universities to participate in the review and guidance of this conference. The conference focuses on the latest research fields such as "information technology", "big data engineering" and "computer engineering", and aims to provide an international cooperation and exchange platform for experts, scholars and business managers in the fields of information technology, big data engineering, computer engineering application to share their research achievements, discuss the key challenges and research directions of the development of this field, and jointly promote the industrialization cooperation and continuous innovation of international academic achievements. This collection of Proceedings compiles oral and paper presentations submitted by the authors and scrutinized by the Special Committee. List of Organizing Committee, Scientific Committee, Editorial Committee, Invited Speakers, Organizing Institutions, Sponsors are available in this pdf.

The aim of this study is to verify a new interface between an aeroelastic code, Bladed, and a 3D potential flow solver, Sesam’s Wasim. The interface is developed to transfer floater kinematics and sea state from a fully-coupled time domain simulation of a floating wind turbine into a 3D time domain potential flow solver to compute a time history of the pressure distribution on the foundation, and at the same time transfer the loads of wind turbine and mooring forces calculated in the coupled analysis. The pressure distribution, together with the other loads, can then be used for performing the structural analysis and post-processing of the floater. The functionality of the interface has been verified with various test cases. The verification study shows that the interface works properly.

The utilization of nanoporous materials is an extremely effective approach to enhance the electrical performances of triboelectric nanogenerators (TENGs). However, existing methods for preparing nanoporous tribo-materials not only are complicated, costly and time-consuming but also waste lots of materials. Meanwhile, the fabricated nanoporous tribo-materials with low roughness by nature possess poor surface hydrophobicities, causing low output stability in a humid environment. Here, a bio-inspired petiole-like micron fiber-based tribo-material with inner nanopores, rough surface nanostructures, and superhydrophobicity is first designed by an extraordinarily simple, ultralow-waste and efficient single-component electrospinning. The petiole-like structures and superhydrophobicity endow the assembled triboelectric nanogenerator (PMF-TENG) with outstanding electrical performances and superior output stability under humid conditions. With a giant power density of 56.9 W m–2 and a high peak-to-peak output voltage of 2209 V, the optimized PMF-TENG can not only be used as a biomechanical energy harvester to directly drive 833 light-emitting-diodes and small electronics but also serve as a self-powered sensor to detect body motions. Moreover, under the high relative humidity of 80%, the output retention rate of the optimized PMF-TENG is 1.7 and 2.2 times as high as the TENG assembled with the traditional smoother solid nanofiber-based tribo-material and the monolithic nanoporous tribo-material-based TENG, respectively. This work provides an easy-to-fabricate high-performance nanoporous material-based TENG with ultralow material waste and extends its potential for application in humidity conditions.

Corner radius is a concept to approximate the fabrication limitation due to the effective beam broadening at the corner in using electron-beam lithography. The purpose of the present study is to investigate the effects of corner radius on the electromagnetic field enhancement and resonance wavelength for three periodic polygon dimers of bowtie, twin square, and twin pentagon. The enhancement factor of surface-enhanced Raman spectroscopy due to the localized surface plasmon resonances in fabricated gold bowtie nanostructures was investigated using both Raman spectroscopy and finite-difference time-domain simulations. The simulated enhancement factor versus corner radius relation was in agreement with measurements and it could be fitted by a power-law relation. In addition, the resonance wavelength showed blue shift with the increasing corner radius because of the distribution of concentrated charges in a larger area. For different polygons, the corner radius instead of the tip angle is the dominant factor of the electromagnetic field enhancement because the surface charges tend to localize at the corner. Greater enhancements can be obtained by having both the smaller gap and sharper corner although the corner radius effect on intensity enhancement is less than the gap size effect.

The supplementary zones surrounding an ordinary Fresnel zone plate (FZP) are utilized to improve the optical resolution at focus. Based on the Fresnel–Kirchhoff diffraction formula, an optimization model is used to design the supplementary zones-surrounded FZP (SZFZP). We justified this optimization model by comparing the numerical simulations and experimental measurements in the visible light region. As expected, the comparison shows a good fit between the simulation and measurement. Mostly, both results showed that the optical resolution and the focal intensity in the visible light region are improved by applying the optimized SZFZP. Afterwards, this model is used to design the SZFZP for applications in extreme ultraviolet (EUV) light. At this point, we demonstrated the ability to fabricate the optimized SZFZP in the EUV region. In addition, we simulated the focusing properties for the designed SZFZP. Consequently, the numerical results for EUV light focused by the designed SZFZP exhibited better performances in optical resolution and intensity.

The constitutive behavior of shape memory alloy (SMA) Ni47Ti44Nb9 specimens subjected to different thermal–mechanical loading histories was investigated experimentally. This involved the application of strain by different proportional or non-proportional paths in the biaxial −γ plane at −60 °C (Ms + 30 °C), the interaction between stress-induced martensitic transformation, reorientation and plastic deformation, temperature-induced reverse martensitic transformation and strain recovery. The results show that the equivalent stress–strain curves, as well as the pure shear and pure tensile curves, depend strongly on the thermal–mechanical loading history. For specimens deformed previously to the same equivalent strains by different paths, the equivalent recovery strains after unloading are similar, as are the spans between the reverse transformation start and final temperatures. The activated martensite variants depend strongly on loading history. The recovery of the axial strain component and that of the shear strain component due to reverse transformation occur synchronously and develop along the shortest path in the −γ plane. The results may provide some new and useful information on the effects of transformation, plasticity and loading paths for further studies and applications of such materials.

The Fourier scatterometry model was used to measure the ZEP 520A electron beam resist lines with specific line edge roughness (LER). By obtaining the pupils via an objective lens, the angle-resolved diffraction spectrum was collected efficiently without additional mechanical scanning. The concavity of the pupil was considered as the weight function in specimen recognition. A series of white noises was examined in the model, and the tolerant white noise levels for different system numerical apertures (NAs) were reported. Our numerical results show that the scatterometry model of a higher NA can identify a target with a higher white noise level. Moreover, the fabricated ZEP 520A electron beam resist gratings with LER were measured by using our model, and the fitting results were matched with scanning electron microscope measurements.

We fabricate p-channel metal-oxide-semiconductor-field-effect-transistors (PMOSFETs) with a HfSiAlON/MoAlN gate stack using a novel and practical gate-last process. In the process, SiO2/poly-Si is adopted as the dummy gate stack and replaced by an HfSiAlON/MoAlN gate stack after source/drain formation. Because of the high-k/metal-gate stack formation after the 1000°C source/drain ion-implant doping activation, the fabricated PMOSFET has good electrical characteristics. The device's saturation driving current is 2.71 × 10−4 A/μm (VGS = VDS = −1.5 V) and the off-state current is 2.78 × 10−9 A/μm. The subthreshold slope of 105 mV/dec (VDS = −1.5 V), drain induced barrier lowering of 80 mV/V and Vth of −0.3 V are obtained. The research indicates that the present PMOSFET could be a solution for high performance PMOSFET applications.

The solution-refined method is developed to solve electrostatic fields of the electron-beam direct-write lithography system. The prediction of accurate electron trajectories and the geometry of the developed photoresist patterns rely on high-resolution electrostatic fields in the whole system. Considering fabrication errors, such electrostatic fields cannot be solved using a cylindrical symmetry. Thus, this problem is a multiscale problem that requires a huge computer memory to solve. In our cases, the minimum number of grids of 1 nm length are applied and the total memory required approaches 75 Gbyte. Since the proposed solution-refined technique has a tradeoff with computational time, fewer central processing units (CPUs) are needed to solve this system because each CPU that solves the problem exceeds its available storage memory. The proposed technique can be used to solve the electron-beam direct-write lithography system at higher resolution and the problems exceed the available storage memory.

The conventional correction strategy used to compensate for imaging errors in extreme ultraviolet (EUV) lithography is accomplished by incorporating independent corrections in which rule-based corrections are used to compensate for EUV-specific imaging effects such as mask shadowing, and a model-based correction is used to compensate for proximity effects. Because most rule-based corrections are empirically developed by using simple Manhattan patterns, some of the simplified approximation approaches would not be applicable in a circuit layout with complicated geometric patterns. These kinds of approximation approaches can lead to ineffective corrections of EUV-specific imaging effects, resulting in inaccurate patterns printed on a wafer which will significantly alter the electrical characteristics of fabricated circuits. In order to prevent the problems due to rule-based corrections, a promising correction strategy has been proposed to simultaneously deal with EUV-specific imaging effects and proximity effects. In this study, the impact of two different correction strategies on the critical dimension (CD) variation caused by defocus and the deviation of electrical characteristics from the design intent is explored. Numerical experiments indicate that the variability of CD and electrical characteristics is significantly improved by the proposed correction strategy.

Zone plate array lithography (ZPAL) in the X-ray or EUV regimes is one possible next-generation lithography solution because of its potential for high-resolution and maskless operation. To achieve a high throughput, Fresnel zone plates (FZPs) are integrated to form arrays of massively parallel exposure beams. FZP fabrication errors and uniformity can be serious issues in ZPAL systems, which are usually assembled and tested directly after zone plate arrays (ZPAs) are fabricated. The yield of this approach can decrease significantly with increasing beam number. A new ZPA design-to-manufacture flow that takes fabrication errors into account before the assembly process is proposed. The errors can be clearly screened by rigorous optical and lithography simulations. The effectiveness of the proposed approach is demonstrated by analyzing preliminary FZP designs of different zone numbers subject to imperfect zone width control. Simulation results indicate that FZPs with smaller zone numbers can tolerate larger radius deviations.