31 results on '"Lin, Zhao-jun"'
Search Results
2. Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterostructures
3. Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors
4. Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors
5. Thermal Stability of Strained AlGaN/GaN Heterostructures
6. Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor
7. Effects of GaN cap layer thickness on an AlN/GaN heterostructure
8. Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor
9. The influence of the channel electric field distribution on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors
10. Effect of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors
11. Influence of temperature on strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors
12. Influence of the channel electric field distribution on the polarization Coulomb field scattering in In 0.18 Al 0.82 N/AlN/GaN heterostructure field-effect transistors
13. Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes
14. Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes
15. Comparison for the carrier mobility between the III–V nitrides and AlGaAs/GaAs heterostructure field-effect transistors
16. Directly extracting both threshold voltage and series resistance from the conductance—voltage curve of an AlGaN/GaN Schottky diode
17. Electron mobility in the linear region of an AlGaN/AlN/GaN heterostructure field-effect transistor
18. Influence of drain bias on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors
19. Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors
20. Directly extracting both threshold voltage and series resistance from the conductance—voltage curve of an AlGaN/GaN Schottky diode
21. Influence of drain bias on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors
22. Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors
23. A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics
24. Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes
25. Influence of thermal stress on the relative permittivity of the AlGaN barrier layer in an AlGaN/GaN heterostructure Schottky contacts
26. Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts
27. Effect of high temperature annealing on strain and band gap of GaN nanoparticles
28. Influence of Ni Schottky contact thickness on two-dimensional electron-gas sheet carrier concentration of strained Al0.3Ga0.7N/GaN heterostructures
29. Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures
30. Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterostructures.
31. Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors.
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