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5 results on '"Yang, Mingchao"'

3. Interface optimization of 4H-SiC (0001) MOS structures with supercritical CO2 fluid

Author

Songquan Yang, Chuanyu Han, Yang Mingchao, Yue Hao, Weihua Liu, Menghua Wang, Liu Jiang, and Li Geng

Subjects
010302 applied physics, Materials science, Passivation, business.industry, Interface (computing), General Engineering, Oxide, General Physics and Astronomy, 02 engineering and technology, Semiconductor device, 021001 nanoscience & nanotechnology, 01 natural sciences, Supercritical fluid, chemistry.chemical_compound, chemistry, Electric field, Reaction model, State density, 0103 physical sciences, Optoelectronics, 0210 nano-technology, business
Abstract

Supercritical CO2 fluid is reported as an effective media in optimizing the SiO2/SiC interface in 4H-SiC(0001) MOS structures at a temperature as low as 150 °C. After SCCO2 treatment, the breakdown electric field is improved to 10.7 MV cm−1. The near-interfacial oxide traps is decreased from 1.62 × 1011 to 1.84 × 1010 cm−2. The interface state density at 0.2 eV below E C is reduced from 6 × 1012 to 2.5 × 1012 eV−1 cm−2. A dynamic reaction model is proposed to explain the defect passivation reaction. This technique can be effectively applied to interface semiconductor devices to enhance performance.

Published
2020

4. Interface optimization of 4H-SiC (0001) MOS structures with supercritical CO2 fluid.

Author

Wang, Menghua, Yang, Mingchao, Liu, Weihua, Yang, Songquan, Liu, Jiang, Han, Chuanyu, Geng, Li, and Hao, Yue

Abstract

Supercritical CO2 fluid is reported as an effective media in optimizing the SiO2/SiC interface in 4H-SiC(0001) MOS structures at a temperature as low as 150 °C. After SCCO2 treatment, the breakdown electric field is improved to 10.7 MV cm−1. The near-interfacial oxide traps is decreased from 1.62 × 1011 to 1.84 × 1010 cm−2. The interface state density at 0.2 eV below EC is reduced from 6 × 1012 to 2.5 × 1012 eV−1 cm−2. A dynamic reaction model is proposed to explain the defect passivation reaction. This technique can be effectively applied to interface semiconductor devices to enhance performance. [ABSTRACT FROM AUTHOR]

Published
2020
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