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Purpose: Microchambers demonstrate anomalous voltage-dependent polarity effects. Existing polarity and ion recombination correction factors do not account for these effects. As a result, many commercial microchamber models do not meet the specification of a reference-class ionization chamber as defined by the American Association of Physicists in Medicine. The purpose of this investigation is to determine the cause of these voltage-dependent polarity effects. Methods: A series of microchamber prototypes were produced to isolate the source of the voltagedependent polarity effects. Parameters including ionization-chamber collecting-volume size, stem and cable irradiation, chamber assembly, contaminants, high-Z materials, and individual chamber components were investigated. Measurements were performed with electrodes coated with graphite to isolate electrode conductivity. Chamber response was measured as the potential bias of the guard electrode was altered with respect to the collecting electrode, through the integration of additional power supplies. Ionization chamber models were also simulated using COMSOL Multiphysics software to investigate the effect of a potential difference between electrodes on electric field lines and collecting volume definition. Results: Investigations with microchamber prototypes demonstrated that the significant source of the voltage-dependent polarity effects was a potential difference between the guard and collecting electrodes of the chambers. The voltage-dependent polarity effects for each prototype were primarily isolated to either the guard or collecting electrode. Polarity effects were reduced by coating the isolated electrode with a conductive layer of graphite. Polarity effects were increased by introducing a potential difference between the electrodes. COMSOL simulations further demonstrated that for a given potential difference between electrodes, the collecting volume of the chamber changed as the applied voltage was altered, producing voltage-dependent polarity effects in the chamber response. Ionization chamber measurements and COMSOL simulations demonstrated an inverse relationship between the chamber collecting volume size and the severity of voltage-dependent polarity effects on chamber response. The effect of a given potential difference on chamber polarity effects was roughly ten times greater for microchambers as compared to Farmer-type chambers. Stem and cable irradiations, chamber assembly, contaminants, and high-Z materials were not found to be a significant source of the voltage-dependent polarity effects. Conclusions: A potential difference between the guard and collecting electrodes was found to be the primary source of the voltage-dependent polarity effects demonstrated by microchambers. For a given potential difference between electrodes, the relative change in the collecting volume is smaller for larger-volume chambers, illustrating why these polarity effects are not seen in larger-volume chambers with similar guard and collecting electrode designs. Thus, for small-volume chambers, it is necessary to reduce the potential difference between the guard and collecting electrodes in order to reduce polarity effects for reference dosimetry measurements. [ABSTRACT FROM AUTHOR]

In this study, investigation of the unipolar resistive switching (RS) of InGaZnO film indicates that the reset voltage polarity can strongly affect the RS region. The dependence of the RS characteristics on the top electrode (Pt, Al, or Cu) was investigated. Asymmetrical electrodes (Cu/InGaZnO/Al) were chosen and the dependence of the RS parameters (e.g., high and low resistance states, set and reset voltages) on these two diverse electrodes can provide two indicators to trace the location of the RS region. The RS region is usually located near the anode when the applied set and reset voltages have the same polarity. In comparison, when the reset voltage has the opposite polarity to the set voltage, the RS region prefers to be located near the anode of the reset process rather than the cathode (which is used as the anode in the set process), indicating the movement of the RS region during the reset process. With the aid of joule heating, oxygen ions can overcome the energy barrier during the reset process under small voltage, resulting in the CFs restructuring and having the inverse shape, which is responsible for the drift mechanism of the RS region. [ABSTRACT FROM AUTHOR]

Thin ZrO2 films and ZrO2/TiO2 bilayers grown by atomic layer deposition (ALD) are integrated into metal-oxide-metal (MOM) structures for investigation of resistive switching (RS) properties. The films have different microstructure depending on the used ALD oxygen source and stacking sequence for the bilayers. Pt/ZrO2/Ti/Pt devices show unipolar RS for oxide thicknesses of 11-18 nm. The devices with O3 grown ZrO2 show higher yield in comparison to the ones with H2O processed oxide. The switching polarity of the Pt/ZrO2/Ti/Pt cells depends on the thickness of the Ti electrode layer. The increase of the Ti layer thickness leads to a change in switching polarity from unipolar to bipolar. The formation of ZrO2/TiO2 bilayers results in changes in the RS behavior of the MOM cells depending on the stacking sequence. [ABSTRACT FROM AUTHOR]

Negative discharge induction experiments were performed with a rod-to-rod electrode configuration having a gap length of 0.8 m using a high-power XeCl excimer laser of maximum output energy of 2 J/pulse and an impulse generator of maximum voltage of 1.2 MV. Development of a leader in the laser-ionized plasma channel was observed by using an image converter camera. When a XeCl excimer laser is applied at a carefully controlled instant, the guiding effect for an impulse discharge is optimized. Three main results were obtained. First, the discharge started near the focal point and then developed bidirectionally toward the high-voltage electrode and the grounded electrode. Midgap leaders were frequently observed. Second, it was observed that the lifetime of the laser-ionized plasma channel was about 1 Ps. Third, the discharge processes were classified into six stages. The mechanism of the streamer and leader propagation is discussed. [ABSTRACT FROM AUTHOR]

Ventricular epicardial mapping was performed in six closed-chest anesthetized dogs to investigate the cardiac electrical response to external pacing. A right thoracotomy was performed, complete AV block was produced by formaldehyde injected into the AV node and a sock electrode array, comprised of 127 unipolar electrodes, was placed over the ventricles. Isopotential and isochronal epicardial maps were generated by computer from the unipolar electrograms. Unipolar stimulation pulses were applied between pairs of different types of cutaneous (metal, carbon) and esophageal (metal) electrodes, and recordings were performed at maximum lung inflation. Isopotential maps recorded during the stimulation artifacts showed that the epicardial electrical field was little affected by the type of electrode but depended mostly on electrode position. A reproducible and relatively uniform apex-to-base potential gradient was regularly produced with anteroposterior and anteroesophageal electrode configurations. This uniform potential gradient induced ventricular activation sequences that showed interindividual differences. Thus, for each dog, the areas of initial activation observed on the isochronal maps during pacing tended to remain the sortie (i.e., apical, lateral, and anterior) despite changes in the stimulation protocol. In vetting the polarity of the electrodes did not appreciably change the site of origin of activation (81 % remained the same) and activation never originated from the area showing the most negative potential during the stimulation artifact. In conclusion, since electrode polarity does not seem to alter the ventricular activation sequence during cardiac pacing with extracardiac electrodes, the standard nomenclature for cutaneous patches, which defines the negative electrode as the “active” electrode, may have to be revised. [ABSTRACT FROM AUTHOR]

We measured the impact of the thermoelectric effect, especially the Peltier effect, upon the operation of phase change memory (PCM) in which the contact resistance between the phase change material and the electrode dominates the total resistance. A PCM device having a pillar structure of diameter 500 nm was fabricated using GeCu2Te3 (GCT) material. During read operation, the set state (with crystalline PCM) showed ohmic contact between the PCM and the electrode, whereas the reset state (with amorphous PCM) showed Schottky contact. The Schottky contact between the amorphous GCT and the electrode showed a bias polarity dependence of set operation owing to the Peltier effect, which is one of the thermoelectric effects. As PCM devices scale down to the nanometre scale, research on contact resistance and various related effects will become more important. [ABSTRACT FROM AUTHOR]