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This work describes the fabrication of anisotropically etched, faceted pyramidal structures in amorphous layers of silicon dioxide or glass. Anisotropic and crystal-oriented etching of silicon is well known. Anisotropic etching behavior in completely amorphous layers of silicon dioxide in combination with purely isotropic hydrofluoric acid as etchant is an unexpected phenomenon. The work presents practical exploitations of this new process for self-perfecting pyramidal structures. It can be used for textured silica or glass surfaces. The reason for the observed anisotropy, leading to enhanced lateral etch rates, is the presence of thin metal layers. The lateral etch rate under the metal significantly exceeds the vertical etch rate of the non-metallized area by a factor of about 6-43 for liquid and 59 for vapor-based processes. The ratio between lateral and vertical etch rate, thus the sidewall inclination, can be controlled by etchant concentration and selected metal. The described process allows for direct fabrication of shallow angle pyramids, which for example can enhance the coupling efficiency of light emitting diodes or solar cells, can be exploited for producing dedicated silicon dioxide atomic force microscopy tips with a radius in the 50 nm range, or can potentially be used for surface plasmonics.

Controlled thin film etching is essential for future semiconductor devices, especially with complex high aspect ratio structures. Therefore, self-limiting atomic layer etching processes are of great interest to the semiconductor industry. In this work, a process for atomic layer etching of aluminum oxide (Al2O3) films using sequential and self-limiting thermal reactions with trimethylaluminum and hydrogen fluoride as reactants was demonstrated. The Al2O3 films were grown by atomic layer deposition using trimethylaluminum and water. The cycle-by-cycle etching was monitored throughout the entire atomic layer etching process time using in situ and in real-time spectroscopic ellipsometry. The studies revealed that the sequential surface reactions were self-limiting versus reactant exposure. Spectroscopic ellipsometry analysis also confirmed the linear removal of Al2O3. Various process pressures ranging from 50 to 200 Pa were employed for Al2O3 etching. The Al2O3 etch rates increased with process pressures: Al2O3 etch rates of 0.92, 1.14, 1.22, and 1.31 Å/cycle were obtained at 300 °C for process pressures of 50, 100, 150, and 200 Pa, respectively. The Al2O3 etch rates increased with the temperature from 0.55 Å/cycle at 250 °C to 1.38 Å/cycle at 350 °C. Furthermore, this paper examined the temperature dependence of the rivalry between the removal (Al2O3 etching) and growth (AlF3 deposition) processes using the reactants trimethylaluminum and hydrogen fluoride. The authors determined that 225 °C is the transition temperature between AlF3 atomic layer deposition and Al2O3 atomic layer etching. The high sensitivity of in vacuo x-ray photoelectron spectroscopy allowed the investigation of the interface reactions for a single etching pulse as well as the initial etch mechanism. The x-ray photoelectron spectroscopy measurements indicated that the fluorinated layer is not completely removed after each trimethylaluminum exposure. The Al2O3 atomic layer etching process mechanism may also be applicable to etch other materials such as HfO2.

So far, only CMOS compatible and scalable hafnia-zirconia (HZO) based ferroelectric (FE) n-FeFETs have been reported. To enable the full ferroelectric hierarchy [1] both p- and n-type devices should be available. Here we report a p-FeFET with a large memory window (MW) for the first time. Moreover, we propose different integration schemes comprising structures with and without internal gate resulting in metal-FE-insulator-Si (MFIS) and metal-FE-metal-insulator-Si (MFMIS) devices which could be used to tackle the problem of interface (IF) degradation and possibly decrease the power consumption of the devices.

Motivation: Plasma etching of low-k and ultra low-k (ULK) dielectric materials have seen a tremendous growth in deep nanoscale applications. Fluorocarbon based gases are the forerunners in etching low-k dielectrics as they are the F suppliers necessary to remove Si and C from SiCOH material. Different FC gases in combination with the additive gases contribute differently to the etch behavior of SiCOH due to differing reaction chemistry and formation of Fluorocarbon layer as an interfacial layer between plasma front and dielectric front [i]. Due to dynamic formation and etching of FC Layer happening at the dielectric surface, understanding FC layer properties in each gas plasma is the starting step to control etch rate and plasma induced damage in Low-k dielectrics. This paper aims to study and compare FC layer deposition by different gases grouped into CF4 and CF4/C4F6 family with N2, O2 and H2 as additive gases in each group. FC layer thickness, etch rate, optical properties of etched SiCOH and chemical composition of the FC layer by different plasma treatments have been presented in this work. Methodology: Dense SiCOH (k=2.75 and Open Porosity: 7%) with initial thickness of 157±3nm is deposited on 300mm Si Wafer with a thin SiO2 adhesion layer in between. These wafers are blanket etched in a commercial etch chamber with the given gas combinations (CF4, CF4/N2, CF4/O2, CF4/H2; CF4/C4F6, CF4/C4F6/N2, CF4/C4F6/O2, CF4/C4F6/H2) for same amount of time, total gas flow rate, similar power, pressure and temperature settings. Post Etch blanket wafers are subjected to various in-line and off-line metrology tools. In-line spectroscopic ellipsometer is used to model complex refractive index and thickness of individual layers. Tauc-Lorentz model best describes the FC layer whereas Cauchy model describes the dielectric [ii]. In-line XPS was carried out to probe the surface of FC layer and gain chemical information. Furthermore depth profile of etched layer is carried out by sputtering the surface with low power Ar ions to study variations in chemical composition with the layer depth. SEM is used to see the cross section profile and verify the results from above method Observation: Thickness evaluation from the dispersion models shows that the CF4 group has higher etch rate and lower FC layer thickness compared to CF4/C4F6 group. C4F6 has higher polymerization ability by the virtue of its lower F/C ratio. Amongst each group, Oxygen as additive gas shows the highest etch rate and least FC thickness followed by Nitrogen whereas Hydrogen has least etch rate but highest FC layer thickness. Under given etch conditions with CF4/C4F6/H2 plasma, deposition rate was higher than etching rate leading to stack growth (Fig.1a). Hydrogen supports polymerization by scavenging Fluorine away and aids in thicker FC films. XPS chemical composition shows Fluorine diffusion through FC layer into the dielectric layer bringing changes to its pristine structure. This affects Carbon% across the etched dielectric thickness (Fig.1b). Thicker the FC layer is, closer is the Carbon % to pristine SiCOH. Presence of surficial Nitrogen in the nitrogen containing plasmas shows nitrogen reacts with SiCOH Carbon, forms CN compounds and increases the etch rate. FC layer shows presence of CF3 radicals on the surface and decrease fast with the depth, followed by CF2 radicals. CF radicals are in larger quantity and are present deepest into the FC Layer. Presence of polymerized C-C and C-CFx bonds increases with the FC Layer depth and offset with increase of C-Si bond near the SiCOH interface. Conclusion: This paper shows comparison of Etch Rate and FC layer thickness during SiCOH etch using different gas combinations in the CCP plasma chamber. Thickness correlation between ellipsometric model data and XPS depth profile followed by SEM cross section measurement of layer thickness point towards the correctness of dispersion models for each layer. These models can be used for quick inline post etch metrology useful for process control. O2 containing plasmas are too aggressive on the dielectric with negligible FC layer formation, while H2 containing plasmas are less damaging but exhibit very small etch rate. CF4/C4F6/N2 plasma is the optimum combination for Low-k dielectric etch amongst other combinations in terms of desired etch rate and lower reduction in Carbon %. Relative concentration and penetration depth of different CFx radicals in FC film suggests its influence on film structure. References: Baklanov et.al, Journal of Applied Physics 113, 041101 (2013); doi: 10.1063/1.4765297 T. Easwarakhanthan et al., Journal of Applied Physics 101, 073102 (2007); doi: 10.1063/1.2719271 Figure 1

Oxygen-free, transparent, and insulating thin films at fabrication temperatures below 100 °C are important for sensitive materials and interfaces, like organic electronics. In this work, a capacitive coupled plasma-enhanced atomic layer deposition process of aluminum nitride with trimethylaluminum as a precursor and a mixture of hydrogen/nitrogen as the reactive gas was studied at 80 and 200 °C. The film properties were characterized by spectroscopic ellipsometry, x-ray photoelectron spectroscopy, scanning electron microscopy, and electrical measurements. The growth per cycle stayed constant at around 1 A, and the refractive index decreased slightly from 1.97 at 200 °C to 1.93 at 80 °C. While the AFM surface roughness was below 0.5 nm at 80 °C deposition temperature, scanning electron microscopy images reveal blister generation at 200 °C on silicon. The x-ray photoemission spectroscopy measurements show a layer composition of Al:N of 1.0:0.9 with a few percent of oxygen and carbon, indicating good air stability and reasonable stoichiometry. The metal-insulator-metal capacitance measurements showed a dielectric constant of 11 at both temperatures. The water vapor transmission rate for a 20 nm thick film on polyethylene naphthalate films was lower than 0.5 mg/(m2⋅day) at 38 °C/90%.Oxygen-free, transparent, and insulating thin films at fabrication temperatures below 100 °C are important for sensitive materials and interfaces, like organic electronics. In this work, a capacitive coupled plasma-enhanced atomic layer deposition process of aluminum nitride with trimethylaluminum as a precursor and a mixture of hydrogen/nitrogen as the reactive gas was studied at 80 and 200 °C. The film properties were characterized by spectroscopic ellipsometry, x-ray photoelectron spectroscopy, scanning electron microscopy, and electrical measurements. The growth per cycle stayed constant at around 1 A, and the refractive index decreased slightly from 1.97 at 200 °C to 1.93 at 80 °C. While the AFM surface roughness was below 0.5 nm at 80 °C deposition temperature, scanning electron microscopy images reveal blister generation at 200 °C on silicon. The x-ray photoemission spectroscopy measurements show a layer composition of Al:N of 1.0:0.9 with a few percent of oxygen and carbon, indicating good air sta...

In order to remove the local openings for contacting PERC Solar cells, one has to introduce passivating contacts. The Al 2 O 3 -TiO x double layer stack is an attractive candidate for this purpose. This study will guide a way to enhance the conductivity of those contacts by doping TiO x with a. Additionally, it is shown, that major parts of the stacks are deposited by sputtering. This demonstrates a higher feasibility for industrial applications than atomic layer deposition as reported earlier [1], [2].

Introduction: Reconfigurable field effect transistors (RFET) have the ability to toggle polarity between n- and pconductance at runtime [1], [2]. The here presented multiple independent gate (MIG) RFET expands the device functionality by offering additional logical inputs, valuable for e.g. efficient XOR or majority gate implementations [3], [4] or the here originally presented multiplexer circuit. Moreover, for the first time with a top-down RFET approach equal ON-currents are obtained for every configuration while requiring only one supply voltage (VDD). Working principle: The presented RFET consists of an intrinsic silicon nanowire channel (Fig. 1a). At both ends NiSi₂ is intruded, which has a work function aligned near to the middle of the Si band gap. Each of the resulting Schottky junctions is gated individually (CG1, PG) and additional gates are introduced along the channel (CG2, CG3). The program gate (PG) determines the device’s polarity and has the same potential as the corresponding drain (0 V for hole or VDD for electron conductance). If all control gates (CG1-3) are biased equally, the RFET turns ON Fig. 3a, b, f, g). Whenever any or all CGs are biased equally to the source’s potential, a potential barrier is formed, switching the RFET OFF (Fig. 3c-e, h-j). Hence, the FET works as wired-AND logic gate (Fig. 6a). The fabrication with CMOS compatible processes and materials is based on a 20 nm silicon-on-insulator (SOI) wafer and requires no doping. The nanowire is formed by a reactive ion etch process [5]. By repeated oxidation and HF etching the wire is further rounded and thinned to ca. 60 nm width and 4 nm height. An omega-shaped gate stack of 5 nm SiO₂, and conductive TiN, Ti and Pt surrounds and radially compresses the wire (Fig. 1b). Finally, nickel is deposited at both ends of the wire and atomically abrupt and flat NiSi₂ Schottky junctions are formed (Fig. 1c). Performance: The transfer characteristics in Fig. 4 reveal an ON/OFF ratio of five orders of magnitudes and ONcurrents which are equal regardless of the programmed configuration. Additionally, only one supply voltage is needed for gates and drain. Despite its necessity for the use in complementary logic circuits, this symmetry was never achieved before for top-down fabricated RFETs. For NiSi₂ and Si, the Schottky barrier height is slightly lower for holes than for electrons leading to initially asymmetric ON-currents. However, by the influence of the omega gate stressor on the band structure the electron and hole injection through the Schottky barrier can be equalized as demonstrated in Fig. 2 [6]. Fig. 4 further shows that the minimum subthreshold swing SS and threshold voltage are lower for the switching with CG2 and CG3 than for all combinations including CG1. This is because CG1 directly controls the inlet at the Schottky junction whereas the other gates only build a conventional channel barrier. Having two efficiently switching gates (CG2+3), as demonstrated for the first time, thus improves the efficiency of RFETs. From Fig. 5 it can be seen that the gates’ voltage determines the shape of the output characteristics. Hole dominated currents rise with retard because the injecting Schottky barrier is still non-transparent for tunneling at VD = 0 V. Applications of the device reach from camouflage circuits for hardware secure authentication [7] and fine-grained FPGAs [8] over area and power-delay optimized circuits [3], [4] to novel logic synthesis based on majority-inverter graphs [9]. As a graspable and novel example, the presented device can serve as transmission gate (Fig. 6b) in a multiplexer (MUX) (Fig. 6c, d), which requires program gates at both in- and output. An n-bit MUX can be reduced by every second stage, thus only (2^[n+1]− 2^i)/3 transmission gates are required, with i=1 for odd and i=2 for even numbers of n (with classical CMOS: 2^[n+1] − 2). For a 4-bit MUX this results in altogether 30% less transistors when considering also the select and program signal inverters and the reduced buffer needs (Fig. 6e). Eventually, more gates per transistor can further reduce the transistor count, e.g. for a 5-gate RFET in a 6-bit MUX by even 42%. [1] A. Heinzig et al., Nano Lett., vol. 12, no. 1, pp. 119–124, (2012). [2] M. D. Marchi et al., in Electron Devices Meeting (IEDM), 2012 IEEE International, pp. 8.4.1–8.4.4, (2012). [3] P.-E. Gaillardon et al., in Test Symposium (LATS), 2016 17th Latin-American, pp. 195–200, (2016). [4] J. Trommer et al., in 2016 Design, Automation Test in Europe Conference Exhibition (DATE), pp. 169–174, (2016). [5] M. Simon et al., IEEE Trans. Nanotechnol., vol. 16, no. 5, pp. 812–819, (2017). [6] T. Baldauf et al., Solid-State Electron., vol. 128, pp. 148–154, (2017). [7] Y. Bi et al., in 2014 IEEE 23rd Asian Test Symposium, pp. 342–347, (2014). [8] P. E. Gaillardon et al., IEEE Trans. Very Large Scale Integr. (VLSI) Syst., vol. 23, no. 10, pp. 2187–2197, (2015). [9] L. Amaru et al., Proc. IEEE, vol. 103, no. 11, pp. 2168–2195, (2015).

Graphene has been proposed as the current controlling element of vertical transport in heterojunction transistors, as it could potentially achieve high operation frequencies due to its metallic character and 2D nature. Simulations of graphene acting as a thermionic barrier between the transport of two semiconductor layers have shown cut-off frequencies larger than 1 THz. Furthermore, the use of n-doped amorphous silicon, (n)-a-Si:H, as the semiconductor for this approach could enable flexible electronics with high cutoff frequencies. In this work, we fabricated a vertical structure on a rigid substrate where graphene is embedded between two differently doped (n)-a-Si:H layers deposited by very high frequency (140 MHz) plasma-enhanced chemical vapor deposition. The operation of this heterojunction structure is investigated by the two diode-like interfaces by means of temperature dependent current-voltage characterization, followed by the electrical characterization in a three-terminal configuration. We demonstrate that the vertical current between the (n)-a-Si:H layers is successfully controlled by the ultra-thin graphene base voltage. While current saturation is yet to be achieved, a transconductance of ~230 μ S was obtained, demonstrating a moderate modulation of the collector-emitter current by the ultra-thin graphene base voltage. These results show promising progress towards the application of graphene base heterojunction transistors.

Organic devices like organic light emitting diodes (OLEDs) or organic solar cells degrade fast when exposed to ambient air. Hence, thin-films acting as permeation barriers are needed for their protection. Atomic layer deposition (ALD) is known to be one of the best technologies to reach barriers with a low defect density at gentle process conditions. As well, ALD is reported to be one of the thinnest barrier layers, with a critical thickness – defining a continuous barrier film – as low as 5–10nm for ALD processed Al2O3. In this work, we investigate the barrier performance of Al2O3 films processed by ALD at 80°C with trimethylaluminum and ozone as precursors. The coverage of defects in such films is investigated on a 5nm thick Al2O3 film, i.e. below the critical thickness, on calcium using atomic force microscopy (AFM). We find for this sub-critical thickness regime that all spots giving raise to water ingress on the 20×20μm2 scan range are positioned on nearly flat surface sites without the presence of particles or large substrate features. Hence below the critical thickness, ALD leaves open or at least weakly covered spots even on feature-free surface sites. The thickness dependent performance of these barrier films is investigated for thicknesses ranging from 15 to 100nm, i.e. above the assumed critical film thickness of this system. To measure the barrier performance, electrical calcium corrosion tests are used in order to measure the water vapor transmission rate (WVTR), electrodeposition is used in order to decorate and count defects, and dark spot growth on OLEDs is used in order to confirm the results for real devices. For 15–25nm barrier thickness, we observe an exponential decrease in defect density with barrier thickness which explains the likewise observed exponential decrease in WVTR and OLED degradation rate. Above 25nm, a further increase in barrier thickness leads to a further exponential decrease in defect density, but an only sub-exponential decrease in WVTR and OLED degradation rate. In conclusion, the performance of the thin Al2O3 permeation barrier is dominated by its defect density. This defect density is reduced exponentially with increasing barrier thickness for alumina thicknesses of up to at least 25nm.

Current trends in electronic industry, such as Internet of Things (IoT) and Cloud Computing call for high interconnect bandwidth, increased number of active devices and high IO count. Hence the integration of on silicon optical waveguides becomes an alternative approach to cope with the performance demands. The application and fabrication of horizontal (planar) and vertical (Through Silicon Vias - TSVs) optical waveguides are discussed here. Coupling elements are used to connect both waveguide structures. Two micro-structuring technologies for integration of coupling elements are investigated: μ-mirror fabrication by nanoimprint (i) and dicing technique (ii). Nanoimprint technology creates highly precise horizontal waveguides with polymer (refractive index nC = 1.56 at 650 nm) as core. The waveguide ends in reflecting facets aligned to the optical TSVs. To achieve Total Internal Reflection (TIR), SiO2 (nCl = 1.46) is used as cladding. TSVs (diameter 20-40μm in 200-380μm interposer) are realized by BOSCH process1, oxidation and SU-8 filling techniques. To carry out the imprint, first a silicon structure is etched using a special plasma etching process. A polymer stamp is then created from the silicon template. Using this polymer stamp, SU-8 is imprinted aligned to vertical TSVs over Si surface.Waveguide dicing is presented as a second technology to create coupling elements on polymer waveguides. The reflecting mirror is created by 45° V-shaped dicing blade. The goal of this work is to develop coupling elements to aid 3D optical interconnect network on silicon interposer, to facilitate the realization of the emerging technologies for the upcoming years.

Plasma-enhanced atomic layer deposition (PE-ALD) of cobalt (Co) using cyclopentadienylcobalt dicarbonyl [CpCo(CO)2] combined with hydrogen, nitrogen, ammonia, and argon based plasma gases was investigated. The utilized ALD tool was clustered to an ultrahigh vacuum analytic system for direct surface analyses including X-ray photoelectron spectroscopy (XPS). The combination with a nondestructive surface analysis system enabled a sample transfer without vacuum break and thereby a direct qualification and quantification of the chemical surface composition under quasi in situ conditions. The authors studied the influence of process parameters (e.g., pulse times, plasma power, and substrate temperature) on film compositions and film properties. The occurrence and prevention of sputtering effects due to ion bombardment at high plasma powers were discussed. Beyond those results, precise information about the impact of different plasma gas compositions on the resulting film properties was obtained. Cobalt films grown using a hydrogen/nitrogen (H2/N2) plasma as a coreactant showed a stable film composition (CoNx) with a high Co content of 75 at. %. Using scanning electron microscopy and four point probe measurements, a moderate electrical resistivity of about 56 μΩ cm was calculated for a 20 nm film. The high sensitivity of in vacuo XPS measurements allowed investigations of interface reactions for a single PE-ALD pulse as well as investigations of the initial film growth mechanisms. The nucleation of CoNx films during PE-ALD using H2/N2 plasma as a coreactant was investigated on several substrate materials by XPS. After the very first cycle of the PE-ALD process, no Co could be detected on all the investigated substrates. XPS revealed that the plasma pulse was needed to provide active binding sites for the adsorption reaction of precursor molecules due to the formation of Si-Nx or Si-NxOy surfaces. Therefore, the plasma pulse plays an important role in the PE-ALD process of Co on silicon surfaces. The early cycles were characterized by the onset of Co—O bonds. The homogeneous film body on all substrates consisted of Co-nitride compounds.

In future, computing platforms will invoke massive parallelism by using a huge number of processing elements. These elements need broadband interconnects to communicate with each other. Following More-than-Moore concepts, soon large numbers of processors will be arranged in 3D chip-stacks. This trend to stack multiple dies produces a demand for high-speed intraconnects (within the 3D stack) which enable an efficient operation. Besides wireless electronic solutions (inductive or capacitive as well as using antennas), optical connectivity is an option for bit rates up to the Tbit/s range, too. We investigated different candidates for optical TSVs. For optical transmission via optical Through-Silicon-Vias, we were able to demonstrate negligible losses and dispersion.

Today, electronics are implemented on rigid substrates. However, many objects in daily-life are not rigid — they are bendable, stretchable and even foldable. Examples are paper, tapes, our body, our skin and textiles. Until today there is a big gap between electronics and bendable daily-life items. Concerning this matter, the DFG Priority Program FFlexCom aims at paving the way for a novel research area: Wireless communication systems fully integrated on an ultra-thin, bendable and flexible piece of plastic or paper. The Program encompasses 13 projects led by 25 professors. By flexibility we refer to mechanical flexibility, which can come in flavors of bendability, foldability and, stretchability. In the last years the speed of flexible devices has massively been improved. However, to enable functional flexible systems and operation frequencies up to the sub-GHz range, the speed of flexible devices must still be increased by several orders of magnitude requiring novel system and circuit architectures, component concepts, technologies and materials.

Applied physics letters 110(10), 101103 (2017). doi:10.1063/1.4977882, In response to the conjecture that the numerical aperture of x-ray optics is fundamentally limited by the critical angle of total reflection [Bergemann et al., Phys. Rev. Lett. 91, 204801 (2003)], the concept of adiabatically focusing refractive lenses was proposed to overcome this limit [Schroer and Lengeler, Phys. Rev. Lett. 94, 054802 (2005)]. We present an experimental realization of these optics made of silicon and demonstrate that they indeed focus 20 keV x rays to a 18.4 nm focus with a numerical aperture of 1.73(9) × 10$^{−3}$ that clearly exceeds the critical angle of total reflection of 1.55 mrad., Published by American Inst. of Physics, Melville, NY

We present an optimized approach for the deposition of Al2O3 (as a model secondary material) coating into high aspect ratio (≈180) anodic TiO2 nanotube layers using the atomic layer deposition (ALD) process. In order to study the influence of the diffusion of the Al2O3 precursors on the resulting coating thickness, ALD processes with different exposure times (i.e., 0.5, 2, 5, and 10 s) of the trimethylaluminum (TMA) precursor were performed. Uniform coating of the nanotube interiors was achieved with longer exposure times (5 and 10 s), as verified by detailed scanning electron microscopy analysis. Quartz crystal microbalance measurements were used to monitor the deposition process and its particular features due to the tube diameter gradient. Finally, theoretical calculations were performed to calculate the minimum precursor exposure time to attain uniform coating. Theoretical values on the diffusion regime matched with the experimental results and helped to obtain valuable information for further optimization of ALD coating processes. The presented approach provides a straightforward solution toward the development of many novel devices, based on a high surface area interface between TiO2 nanotubes and a secondary material (such as Al2O3).

A dense plasma enhanced chemical vapor deposition (PECVD) SiCOH film and a porous ultralow-κ (pULK) film have been investigated by means of the Fourier transform infrared spectroscopy. Structural differences between both materials have been found in particular in the amount of silanol groups and in the location and shape of the Si-O-Si stretching vibration band. Furthermore, moisturized samples of these materials have been investigated in situ during outgassing in rough vacuum. It has been observed that the pULK film contains only about 25% of the water amount found in the dense SiCOH film in saturation at 80% relative humidity and room temperature. A comparison of the water-related species in the investigated dielectric films with a liquid water spectrum identified hydrogen-bonded water-silanol groups in both materials and hydrogen-bonded water-water groups in the pULK film. During the outgassing process, no indication of shrinking or other structural changes were found, except for a shift in the silanol-associated vibration band to slightly higher wavenumbers. The achieved results are in good agreement to previous electrical characterization of both dielectric films.

The influence of moisture on the electrical properties of PECVD SiCOH and a PECVD porous ultralow- κ (pULK) material has been investigated in comparison with a thermal oxide and a PECVD oxide. Capacitance-time (C -t) measurements are performed on metal-insulator-metal structures during exposure to different humidity conditions (0% to 80% RH) to determine the effect on the relative permittivity. The results show a big difference in the amounts of moisture absorbance of the investigated materials. While the PECVD oxide and the thermal oxide show no effect on exposure to a humid atmosphere, the increase in the permittivity of SiCOH due to moisture uptake is 7%, and surprisingly, the change in the permittivity of the porous dielectric material is 1.75%. Within these experiments, the diffusion process of moisture into the dielectric materials could be observed in situ, and a diffusion model is created to extract diffusion constants and a value for the saturation concentration. Furthermore, the flatband voltage shift of SiCOH and the pULK material in metal-insulator-semiconductor structures at different ambient humidity levels has been studied. The findings suggest that moisture uptake causes a positive charge inside the dielectric materials, which is responsible for the observed flatband voltage shift.

Plasma-enhanced chemical vapor deposition of thin a-Si:H layers on transferred large area graphene is investigated. Radio frequency (RF, 13.56 MHz) and very high frequency (VHF, 140 MHz) plasma processes are compared. Both methods provide conformal coating of graphene with Si layers as thin as 20 nm without any additional seed layer. The RF plasma process results in amorphization of the graphene layer. In contrast, the VHF process keeps the high crystalline quality of the graphene layer almost intact. Correlation analysis of Raman 2D and G band positions indicates that Si deposition induces reduction of the initial doping in graphene and an increase of compressive strain. Upon rapid thermal annealing the amorphous Si layer undergoes dehydrogenation and transformation into a polycrystalline film whereby a high crystalline quality of graphene is preserved., Comment: 9 pages, 6 figures

We present an optimized approach for the deposition of Al2O3 (as a model secondary material) coating into a high aspect ratio (≈180) anodic TiO2 nanotube layers using atomic layer deposition (ALD) process. In order to study the influence of the diffusion of the Al2O3 precursors on the resulting coating thickness, ALD processes with different exposure times (i.e. 0.5, 2, 5 and 10 sec) of the trimethylaluminium (TMA) precursor were performed. Uniform coating of the nanotube interiors was achieved with longer exposure times (5 and 10 sec), as verified by detailed scanning electron microscopy analysis. Quartz crystal microbalance measurements were used to monitor the deposition process and its particular features due to the tube diameter gradient. Finally, theoretical calculations were performed to calculate the minimum precursor exposure time to attain uniform coating. Theoretical values on the diffusion regime matched with the experimental results and helped to obtain valuable information for further optimization of ALD coating processes. The presented approach provides a straightforward solution towards the development of many novel devices, based on a high surface area interface between TiO2 nanotubes and a secondary material (such as Al2O3).

Graphene has been considered for a variety of applications including novel nanoelectronic device concepts. However, the deposition of ultra-thin high-k dielectrics on top of graphene has still been challenging due to graphene's lack of dangling bonds. The formation of large islands and leaky films has been observed resulting from a much delayed growth initiation. In order to address this issue, we tested a pre-treatment with NF 3 instead of XeF 2 on CVD graphene as well as epitaxial graphene monolayers prior to the Atomic Layer Deposition (ALD) of Al 2 O 3 . All experiments were conducted in vacuo; i. e. the pristine graphene samples were exposed to NF 3 in the same reactor immediately before applying 30 (TMA-H 2 O) ALD cycles and the samples were transferred between the ALD reactor and a surface analysis unit under high vacuum conditions. The ALD growth initiation was observed by in-situ real-time Spectroscopic Ellipsometry (irtSE) with a sampling rate above 1 Hz. The total amount of Al 2 O 3 material deposited by the applied 30 ALD cycles was cross-checked by in-vacuo X-ray Photoelectron Spectroscopy (XPS). The Al 2 O 3 morphology was determined by Atomic Force Microscopy (AFM). The presence of graphene and its defect status was examined by in-vacuo XPS and Raman Spectroscopy before and after the coating procedure, respectively.

High dielectric constant materials come into focus as a replacement for the currently used silicon-dioxide or silicon-oxynitride dielectrics in CMOS processes due to further densification of devices. One main issue of these alternative materials is charge trapping in the dielectric. Charge trapping causes instabilities of electrical properties like threshold voltage shifts and less reliability. Thus, trapping behavior of alternative dielectric materials is an important question. Within this paper trap density depth profiling based on charge-pumping measurements were applied to Al/sub 2/O/sub 3/ high-k dielectric transistors. With this method it was possible to analyze the depth of trap centers throughout the dielectric. A homogenous distribution of trapping centers was observed. The trap-density was lower for a SiO/sub 2/ interface layer compared to a Si/sub 3/N/sub 4/ interface. However, in general, the density was four orders of magnitude higher with an Al/sub 2/O/sub 3/ dielectric compared to standard gate-oxide. Device stability can be correlated to trap densities and resulting threshold voltage shifts. Furthermore, analytical results give strong indications that silicon interdiffusion and grain boundaries are the main cause for trap sites.

Within this work, flash lamp annealing (FLA) is utilized to thermally enhance the film growth in atomic layer deposition (ALD). First, the basic principles of this flash-enhanced ALD (FEALD) are presented in detail, the technology is reviewed and classified. Thereafter, results of our studies on the FEALD of aluminum-based and ruthenium thin films are presented. These depositions were realized by periodically flashing on a substrate during the precursor exposure. In both cases, the film growth is induced by the flash heating and the processes exhibit typical ALD characteristics such as layer-by-layer growth and growth rates smaller than one A/cycle. The obtained relations between process parameters and film growth parameters are discussed with the main focus on the impact of the FLA-caused temperature profile on the film growth. Similar, substrate-dependent growth rates are attributed to the different optical characteristics of the applied substrates. Regarding the ruthenium deposition, a single-source process was realized. It was also successfully applied to significantly enhance the nucleation behavior in order to overcome substrate-inhibited film growth. Besides, this work addresses technical challenges for the practical realization of this film deposition method and demonstrates the potential of this technology to extend the capabilities of thermal ALD. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. [DOI: 10.1149/2.0301507jss] All rights reserved.

The inversion field-effect transistor is the basic device of modern microelectronics and is nowadays used more than a billion times on every state-of-the-art computer chip. In the future, this rigid technology will be complemented by flexible electronics produced at extremely low cost. Organic field-effect transistors have the potential to be the basic device for flexible electronics, but still need much improvement. In particular, despite more than 20 years of research, organic inversion mode transistors have not been reported so far. Here we discuss the first realization of organic inversion transistors and the optimization of organic depletion transistors by our organic doping technology. We show that the transistor parameters—in particular, the threshold voltage and the ON/OFF ratio—can be controlled by the doping concentration and the thickness of the transistor channel. Injection of minority carriers into the doped transistor channel is achieved by doped contacts, which allows forming an inversion layer., Inversion type transistors – which are widely used in silicon-based industries – are thought to not be obtainable in organic devices. Lüssem et al. realize the first inversion organic field-effect transistor by doping at the source and drain contacts without degrading its ON/OFF ratio.

In this paper, the authors present the temperature dependent sticking coefficient (SC) of bis-diethyl aminosilane (BDEAS) and trimethylaluminum (TMA) in atomic layer deposition. SiO2 from BDEAS and ozone at substrate temperatures between 200 and 350 °C as well as Al2O3 from TMA and water deposited at substrate temperatures between 150 and 300 °C was deposited on our likewise in this journal published cavity test structures. The SC of BDEAS shows an Arrhenius dependence while for TMA no temperature dependent SC could be resolved. The activation energy for BDEAS which is extracted from a linear fit to the Arrhenius diagram is compared to the value gained by density functional theory calculations from the literature. Furthermore, the different growth behavior of BDEAS and TMA under substrate temperature considerations is identified with different deposition regimes as proposed in the literature.

The authors present a new method to determine film thicknesses and sticking coefficients (SC) of precursor molecules for atomic layer deposition (ALD) in high aspect ratio three dimensional (3D) geometries as they appear in microelectromechanical system manufacturing. The method combines a specifically designed experimental test structure with the theoretical predictions from a novel 3D Monte Carlo process simulation for large structures. The authors exemplify our method using Al2O3 and SiO2 ALD processes. SCs for trimethylaluminium and bis-diethyl aminosilane (BDEAS) are extracted. The SC for BDEAS is determined for the first time.

The interest in vertical organic transistors as a means to overcome the limitations of conventional organic field-effect transistors (OFETs) has been growing steadily in recent years. Current vertical architectures, however, often suffer from a lack of parameter control, as they are limited to certain materials and processing techniques, making a controlled shift of, e.g., the transistor threshold voltage difficult. In this contribution, we present a vertical OFET (VOFET) operating in the inversion regime. By varying the thickness or doping concentration of a p-doped layer in an otherwise n-type VOFET, we are able to shift the threshold voltage in a controlled manner from 1.61 V (for a normal n-type VOFET) to 4.83 V (for the highest doping concentration of 50 mol. %). Furthermore, it is found that low doping concentrations of 20 mol. % can improve the Off state of the VOFET through reduction of the source-drain leakage current.

Diffusion barrier stacks for the encapsulation of organic electronics made from inorganic nanolaminates of Al2O3 and TiO2 with aluminum alkoxide interlayers have been deposited by atomic layer deposition (ALD) and molecular layer deposition (MLD). As a part of the MLD process development, the deposition of aluminum alkoxide with low a density of about 1.7 g/cm3 was verified. The ALD/MLD diffusion barrier stack is meant to be deposited either on a polymer film, creating a flexible barrier substrate, or on top of a device on glass, creating a thin-film encapsulation. In order to measure the water vapor transmission rate (WVTR) through the barrier, the device is replaced by a calcium layer acting as a water sensor in an electrical calcium test. For the barrier stack applied as thin-film encapsulation on glass substrates, high resolution scanning electron microscopy investigations indicate that the inorganic nanolaminates without MLD interlayers are brittle as they crack easily upon the stress induced by the ...

Graphene based electron field emitter arrays consisting of cone-shaped silicon tips, a thin Al2O3 tunnel barrier, and graphene top electrode are fabricated. Due to the monolayered graphene top electrode, the electrons are able to tunnel through the Al2O3 layer and emit into the vacuum. The temperature behavior of the tunnel leakage current as well as the emission current is characterized.

In order to focus light or x rays, the thickness of a refractive lens is typically varied over its aperture. Here, we present a refractive x-ray lens made of lamellae of constant thickness, the refractive lamellar lens. Refractive power is created by a specific bending of the lamellae rather than by a concave lens profile. This very special design has the technological advantage that materials like sapphire or diamond can be used to make lenses by coating techniques. A first lens prototype focused x rays with a photon energy E = 15.25 keV to a lateral beam size of 164 nm x 296 nm full width at half maximum.

Nanolaminates comprising of TiO2 or HfO2 sublayers within an Al2O3 matrix are grown with atomic layer deposition. These nanolaminates provide an improved silicon surface passivation compared to conventional Al2O3 films. The physical properties of the nanolaminates can be described with a dynamic growth model that considers initial and steady-state growth rates for the involved metal oxides. This model links the cycle ratios of the different atomic layer deposition precursors to the thickness and the material concentrations of the nanolaminate, which are determined by means of spectroscopic ellipsometry. Effective carrier lifetime measurements show that Al2O3-TiO2 nanolaminates achieve values of up to 6.0 ms at a TiO2 concentration of 0.2%. In Al2O3-HfO2 nanolaminates, a maximum effective carrier lifetime of 5.5 ms is reached at 7% HfO2. Electrical measurements show that the TiO2 incorporation causes strong hysteresis effects, which are linked to the trapping of negative charges and result in an enhanced field effect passivation. For the Al2O3-HfO2 nanolaminates, the capacitance data clearly show a very low density of interface traps (below 5·1010 eV−1·cm−2) and a reduction of the fixed charge density with increasing HfO2 concentration. Due to the low number of recombination centers near the surface, the reduced field effect passivation only had a minor impact on the effective carrier lifetime.

In this work, a process for the thermal activated atomic layer deposition (ALD) of ruthenium from the organometallic heteroleptic precursor [(ethylcyclopentadienyl)(pyrrolyl)ruthenium] with molecular oxygen was developed and characterized. Silicon substrates were precleaned in hydrofluoric acid and preheated to a specific temperature before coating with ruthenium. The corresponding cycle-by-cycle growth was monitored throughout the entire ALD process time, utilizing an in-situ real-time spectroscopic ellipsometer. Transmission electron microscopy and atomic force microscopy were applied at a reference sample to generate an appropriate optical model for the translation of the ellipsometric spectra into Ru film thicknesses. Given a representative set of process parameters the cycle-by-cycle growth was studied in detail, obtaining information about incubation, nucleation, linear growth and delamination. In order to determine the ALD characteristic dependencies, the following process parameters were varied wh...

Hyperbranched polyesters containing labile triazene units in the main chain have been characterized according to their photochemically and thermally induced decomposition behavior. Irradiation with UV light results in a first order decomposition behavior with half-time of 6 to 48 min depending on the structure of the repeating unit. Thermal decomposition starts at about 160°C, and about 50% mass loss are achieved after 15 min at 250°C. Homogeneous incorporation of these globular, functional polymers in thermostable polymer matrices (polyimides and benzocyclobutane-based polymers) was possible. Smooth films from blends of thermostable matrix and up to 50% hyperbranched polymers could be prepared. The hyperbranched component could be destroyed selectively, and the resulting porous matrix has been studied as insulating material for microelectronic multilayer applications.