1. Structural and magnetotransport properties of ultrathin Co/ZnO and Co/ZnAlO films.
- Author
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Zhi-Yong Quan, Xian-Peng Zhang, Wei Liu, Albargi, H. B., Gehring, G. A., and Xiao-Hong Xu
- Subjects
AMORPHOUS semiconductors ,TUNNEL magnetoresistance ,FERROMAGNETIC materials ,X-ray diffraction ,TRANSMISSION electron microscopy ,MAGNETIC fields ,MAGNETIC anisotropy - Abstract
We report the structural and magnetotransport properties of ultrathin superparamagnetic Co/ZnO and Co/ZnAlO films deposited by sequentially sputtering Co layers and semiconductor layers. The films consisting of Co nanodots embedded in an amorphous semiconductor matrix exhibit large room temperature tunneling magnetoresistance with a maximum value of over 7%. The singlelayer- nanodot structures gradually develop in the films with thicknesses below 8 nm, where tunneling processes existing only between nanodots that lie in a plane are realized. The tunneling magnetoresistance ratio at room temperature is as high as 5% although the thickness of the Co/ZnAlO film is as thin as 3.2 nm. These single-layer-nanodot films having high tunneling magnetoresistance ratios and superparamagnetic behavior can be used in transparent nano-granular in gap sensors. [ABSTRACT FROM AUTHOR]
- Published
- 2014
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