Search

Your search keyword '"Wouters, D. J."' showing total 102 results

Search Constraints

Start Over You searched for: Author "Wouters, D. J." Remove constraint Author: "Wouters, D. J." Search Limiters Peer Reviewed Remove constraint Search Limiters: Peer Reviewed
102 results on '"Wouters, D. J."'

Search Results

1. Stabilizing amplifier with a programmable load line for characterization of nanodevices with negative differential resistance

2. Full factorial analysis of gradual switching in thermally oxidized memristive devices.

Catalog

Books, media, physical & digital resources

3. Accurate evaluation method for HRS retention of VCM ReRAM.

11. Stabilizing amplifier with a programmable load line for characterization of nanodevices with negative differential resistance.

16. Current-limiting amplifier for high speed measurement of resistive switching data.

19. Role of the anode material in the unipolar switching of TiN\NiO\Ni cells.

20. Electronic structure of NiO layers grown on Al2O3 and SiO2 using metallo-organic chemical vapour deposition.

21. Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers.

22. Enhanced oxidation of TiAlN barriers integrated in three-dimensional ferroelectric capacitor structures.

23. Imprint mechanism in integrated Bi-rich SrBi2Ta2O9 capacitors: Influence of the temperature-dependent polarization.

24. Integration of SrBi2Ta2O9 thin films for high density ferroelectric random access memory.

25. Composition control and ferroelectric properties of sidewalls in integrated three-dimensional SrBi2Ta2O9-based ferroelectric capacitors.

26. Degradation and recovery of polarization under synchrotron x rays in SrBi2Ta2O9 ferroelectric capacitors.

27. Degradation and recovery of polarization under synchrotron x rays in SrBi(sub 2)Ta(sub 2)O9 ferroelectric capacitors

28. Analyses of a 1-layer neuromorphic network using memristive devices with non-continuous resistance levels.

29. Explosive crystallization of amorphous Si3N4 films on silicon during silicon laser melting.

30. Effects of capping layer material and recrystallization conditions on the characteristics of silicon-on-insulator metal-oxide-semiconductor transistors in laser-recrystallized silicon films.

31. Role of impurities in zone melting recrystallization of 10 μm thick polycrystalline silicon films.

32. Valence change detection in memristive oxide based heterostructure cells by hard X-ray photoelectron emission spectroscopy.

33. Investigation of the leakage mechanism in Sr–Ta–O and Bi–Ta–O thin film capacitors.

35. 3-bit Resistive RAM Write-Read Scheme Based on Complementary Switching Mechanism.

36. 3-Bit Multilevel Switching by Deep Reset Phenomenon in Pt/W/TaOX/Pt-ReRAM Devices.

39. Intrinsic Switching Behavior in HfO2 RRAM by Fast Electrical Measurements on Novel 2R Test Structures.

40. Reliability of low current filamentary HfO2 RRAM discussed in the framework of the hourglass SET/RESET model.

41. Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight.

42. Insights into Ni-filament formation in unipolar-switching Ni/HfO2/TiN resistive random access memory device.

43. Bipolar Switching Characteristics and Scalability in NiO Layers Made by Thermal Oxidation of Ni.

44. Dielectric Response of Ta2O5, Nb2O5, and NbTaO5 from First-Principles Investigations.

45. Atomic Layer Deposition of Strontium Titanate Films Using Sr(tBu3Cp)2 and Ti(OMe)4.

47. Integration of MOCVD SBT Stacked Ferroelectric Capacitors in a 0.35 μm CMOS Technology.

49. Aqueous CSD of Ferroelectric Bi3.5La0.5Ti3O12 (BLT) Thin Films.

50. Influence of Heat Treatment on Sr0.9Bi2.2Ta2O9 Thin Films Prepared by Aqueous CSD.